Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs- A Simulation and Device Physics Based Study: Part I: Theory and Methodology Article Swipe
Shruti Mehrotra
,
S. Qureshi
·
YOU?
·
· 2020
· Open Access
·
· DOI: https://doi.org/10.48550/arxiv.2007.02270
YOU?
·
· 2020
· Open Access
·
· DOI: https://doi.org/10.48550/arxiv.2007.02270
A novel planar device having doped silicon regions (tubs) under the source and drain of an FDSOI MOSFET is reported at 20 nm gate length. The doped silicon regions result in formation of potential wells (PW) in the source and drain regions of FDSOI MOSFET and thus, the device being called as Potential Well Based FDSOI MOSFET (PWFDSOI MOSFET). Simulation and device physics study on PWFDSOI MOSFET showed reduction in the OFF current of the device by orders of magnitude. A low IOF F of 22 pA/um, high ION /IOF F ratio of 1.5 x 107 and subthreshold swing of 76 mV/decade were achieved in 20 nm gate length PWFDSOI MOSFET. The study was performed on devices with unstrained silicon channel.
Related Topics
Concepts
MOSFET
Silicon on insulator
Subthreshold swing
Materials science
Optoelectronics
Silicon
Doping
Subthreshold conduction
Subthreshold slope
Nanoscopic scale
Electrical engineering
Engineering physics
Nanotechnology
Physics
Transistor
Engineering
Voltage
Metadata
- Type
- preprint
- Language
- en
- Landing Page
- http://arxiv.org/abs/2007.02270
- https://arxiv.org/pdf/2007.02270
- OA Status
- green
- References
- 13
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W3038789970
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W3038789970Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.48550/arxiv.2007.02270Digital Object Identifier
- Title
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Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs- A Simulation and Device Physics Based Study: Part I: Theory and MethodologyWork title
- Type
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preprintOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2020Year of publication
- Publication date
-
2020-07-05Full publication date if available
- Authors
-
Shruti Mehrotra, S. QureshiList of authors in order
- Landing page
-
https://arxiv.org/abs/2007.02270Publisher landing page
- PDF URL
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https://arxiv.org/pdf/2007.02270Direct link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- OA URL
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https://arxiv.org/pdf/2007.02270Direct OA link when available
- Concepts
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MOSFET, Silicon on insulator, Subthreshold swing, Materials science, Optoelectronics, Silicon, Doping, Subthreshold conduction, Subthreshold slope, Nanoscopic scale, Electrical engineering, Engineering physics, Nanotechnology, Physics, Transistor, Engineering, VoltageTop concepts (fields/topics) attached by OpenAlex
- Cited by
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0Total citation count in OpenAlex
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13Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.Potential | 52 |
| abstract_inverted_index.formation | 31 |
| abstract_inverted_index.mV/decade | 101 |
| abstract_inverted_index.performed | 114 |
| abstract_inverted_index.potential | 33 |
| abstract_inverted_index.reduction | 68 |
| abstract_inverted_index.Simulation | 59 |
| abstract_inverted_index.magnitude. | 79 |
| abstract_inverted_index.unstrained | 118 |
| abstract_inverted_index.subthreshold | 97 |
| cited_by_percentile_year | |
| countries_distinct_count | 1 |
| institutions_distinct_count | 2 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/7 |
| sustainable_development_goals[0].score | 0.44999998807907104 |
| sustainable_development_goals[0].display_name | Affordable and clean energy |
| citation_normalized_percentile |