Integration of through-sapphire substrate machining with superconducting quantum processors Article Swipe
Narendra Acharya
,
A. Robert Armstrong
,
Yashwanth Balaji
,
Kevin G. Crawford
,
James C. Gates
,
Paul C. Gow
,
Oscar W. Kennedy
,
Renuka Devi Pothuraju
,
Kowsar Shahbazi
,
Connor D. Shelly
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.48550/arxiv.2406.09930
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.48550/arxiv.2406.09930
We demonstrate a sapphire machining process integrated with intermediate-scale quantum processors. The process allows through-substrate electrical connections, necessary for low-frequency mode-mitigation, as well as signal-routing, which are vital as quantum computers scale in qubit number, and thus dimension. High-coherence qubits are required to build fault-tolerant quantum computers and so material choices are an important consideration when developing a qubit technology platform. Sapphire, as a low-loss dielectric substrate, has shown to support high-coherence qubits. In addition, recent advances in material choices such as tantalum and titanium-nitride, both deposited on a sapphire substrate, have demonstrated qubit lifetimes exceeding 0.3 ms. However, the lack of any process equivalent of deep-silicon etching to create through-substrate-vias in sapphire, or to inductively shunt large dies, has limited sapphire to small-scale processors, or necessitates the use of chiplet architecture. Here, we present a sapphire machining process that is compatible with high-coherence qubits. This technique immediately provides a means to scale QPUs with integrated mode-mitigation, and provides a route toward the development of through-sapphire-vias, both of which allow the advantages of sapphire to be leveraged as well as facilitating the use of sapphire-compatible materials for large-scale QPUs.
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Metadata
- Type
- preprint
- Language
- en
- Landing Page
- http://arxiv.org/abs/2406.09930
- https://arxiv.org/pdf/2406.09930
- OA Status
- green
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4399759213
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4399759213Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.48550/arxiv.2406.09930Digital Object Identifier
- Title
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Integration of through-sapphire substrate machining with superconducting quantum processorsWork title
- Type
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preprintOpenAlex work type
- Language
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enPrimary language
- Publication year
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2024Year of publication
- Publication date
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2024-06-14Full publication date if available
- Authors
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Narendra Acharya, A. Robert Armstrong, Yashwanth Balaji, Kevin G. Crawford, James C. Gates, Paul C. Gow, Oscar W. Kennedy, Renuka Devi Pothuraju, Kowsar Shahbazi, Connor D. ShellyList of authors in order
- Landing page
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https://arxiv.org/abs/2406.09930Publisher landing page
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https://arxiv.org/pdf/2406.09930Direct link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- OA URL
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https://arxiv.org/pdf/2406.09930Direct OA link when available
- Concepts
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Sapphire, Machining, Superconductivity, Quantum, Substrate (aquarium), Optoelectronics, Materials science, Physics, Condensed matter physics, Metallurgy, Optics, Quantum mechanics, Geology, Laser, OceanographyTop concepts (fields/topics) attached by OpenAlex
- Cited by
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0Total citation count in OpenAlex
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10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.create | 109 |
| abstract_inverted_index.qubits | 39 |
| abstract_inverted_index.recent | 75 |
| abstract_inverted_index.toward | 161 |
| abstract_inverted_index.chiplet | 130 |
| abstract_inverted_index.choices | 50, 79 |
| abstract_inverted_index.etching | 107 |
| abstract_inverted_index.limited | 120 |
| abstract_inverted_index.number, | 34 |
| abstract_inverted_index.present | 134 |
| abstract_inverted_index.process | 5, 12, 103, 138 |
| abstract_inverted_index.quantum | 9, 29, 45 |
| abstract_inverted_index.qubits. | 72, 144 |
| abstract_inverted_index.support | 70 |
| abstract_inverted_index.However, | 98 |
| abstract_inverted_index.advances | 76 |
| abstract_inverted_index.low-loss | 64 |
| abstract_inverted_index.material | 49, 78 |
| abstract_inverted_index.provides | 148, 158 |
| abstract_inverted_index.required | 41 |
| abstract_inverted_index.sapphire | 3, 89, 121, 136, 173 |
| abstract_inverted_index.tantalum | 82 |
| abstract_inverted_index.Sapphire, | 61 |
| abstract_inverted_index.addition, | 74 |
| abstract_inverted_index.computers | 30, 46 |
| abstract_inverted_index.deposited | 86 |
| abstract_inverted_index.exceeding | 95 |
| abstract_inverted_index.important | 53 |
| abstract_inverted_index.leveraged | 176 |
| abstract_inverted_index.lifetimes | 94 |
| abstract_inverted_index.machining | 4, 137 |
| abstract_inverted_index.materials | 185 |
| abstract_inverted_index.necessary | 17 |
| abstract_inverted_index.platform. | 60 |
| abstract_inverted_index.sapphire, | 112 |
| abstract_inverted_index.technique | 146 |
| abstract_inverted_index.advantages | 171 |
| abstract_inverted_index.compatible | 141 |
| abstract_inverted_index.developing | 56 |
| abstract_inverted_index.dielectric | 65 |
| abstract_inverted_index.dimension. | 37 |
| abstract_inverted_index.electrical | 15 |
| abstract_inverted_index.equivalent | 104 |
| abstract_inverted_index.integrated | 6, 155 |
| abstract_inverted_index.substrate, | 66, 90 |
| abstract_inverted_index.technology | 59 |
| abstract_inverted_index.demonstrate | 1 |
| abstract_inverted_index.development | 163 |
| abstract_inverted_index.immediately | 147 |
| abstract_inverted_index.inductively | 115 |
| abstract_inverted_index.large-scale | 187 |
| abstract_inverted_index.processors, | 124 |
| abstract_inverted_index.processors. | 10 |
| abstract_inverted_index.small-scale | 123 |
| abstract_inverted_index.connections, | 16 |
| abstract_inverted_index.deep-silicon | 106 |
| abstract_inverted_index.demonstrated | 92 |
| abstract_inverted_index.facilitating | 180 |
| abstract_inverted_index.necessitates | 126 |
| abstract_inverted_index.architecture. | 131 |
| abstract_inverted_index.consideration | 54 |
| abstract_inverted_index.low-frequency | 19 |
| abstract_inverted_index.High-coherence | 38 |
| abstract_inverted_index.fault-tolerant | 44 |
| abstract_inverted_index.high-coherence | 71, 143 |
| abstract_inverted_index.signal-routing, | 24 |
| abstract_inverted_index.mode-mitigation, | 20, 156 |
| abstract_inverted_index.through-substrate | 14 |
| abstract_inverted_index.titanium-nitride, | 84 |
| abstract_inverted_index.intermediate-scale | 8 |
| abstract_inverted_index.sapphire-compatible | 184 |
| abstract_inverted_index.through-sapphire-vias, | 165 |
| abstract_inverted_index.through-substrate-vias | 110 |
| cited_by_percentile_year | |
| countries_distinct_count | 0 |
| institutions_distinct_count | 10 |
| citation_normalized_percentile |