Investigation of a Physical Model for the Reverse Recovery Characteristics of PT-PIN FRD with a Buffer Layer Article Swipe
Yameng Sun
,
Kun Ma
,
Yuan Xiong
,
Anning Chen
,
Yang Liu
,
Yifan Song
,
Xuehan Li
,
Tongtong Zi
,
Zhou Yang
,
Sheng Liu
·
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.3390/electronics14030570
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.3390/electronics14030570
As application conditions become increasingly demanding and usage becomes more aggressive, the performance of traditional insulated gate bipolar transistor (IGBT) and fast recovery diode (FRD) systems can no longer meet the required specifications. In these systems, FRDs are required to carry load current and allow current to return from the load to the IGBTs. Consequently, the reverse recovery performance of the FRDs significantly restricts the overall efficiency of the system. Therefore, how to predict the reverse recovery characteristics of the FRDs with greater precision has attracted considerable attention. In this context, this paper presents an in-depth investigation of the high-level injection carrier distribution and reverse recovery characteristics of punchthrough P-I-N (PT-PIN) FRD with a buffer layer. Specifically, the research explores the physical properties of the materials, doping concentrations, and the geometric structure of the devices. Furthermore, it takes into account the complex interactions among carrier recombination, diffusion, and drift, leading to the development of a model that delineates the spatial distribution of carriers and their influence on current conduction. Building upon the traditional step-wise analysis method, subsequently, the temporal aspects of the FRDs reverse recovery process were further segmented. Utilizing the derived carrier distribution model, a reverse recovery analytical model was constructed. The model was validated using a 1200 V, 100 A IGBT with 1200 V, 60 A FRD configured in a reverse parallel arrangement, which demonstrated a 5% improvement in prediction accuracy of VR compared with previous models that employed the lumped charge method. Finally, a range of experiments with varying RG, VCC and IF confirmed the broad applicability of this analytical model.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.3390/electronics14030570
- OA Status
- gold
- References
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- Related Works
- 10
- OpenAlex ID
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https://openalex.org/W4407005641Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.3390/electronics14030570Digital Object Identifier
- Title
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Investigation of a Physical Model for the Reverse Recovery Characteristics of PT-PIN FRD with a Buffer LayerWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2025Year of publication
- Publication date
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2025-01-31Full publication date if available
- Authors
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Yameng Sun, Kun Ma, Yuan Xiong, Anning Chen, Yang Liu, Yifan Song, Xuehan Li, Tongtong Zi, Zhou Yang, Sheng LiuList of authors in order
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https://doi.org/10.3390/electronics14030570Publisher landing page
- Open access
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YesWhether a free full text is available
- OA status
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goldOpen access status per OpenAlex
- OA URL
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https://doi.org/10.3390/electronics14030570Direct OA link when available
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Buffer (optical fiber), Layer (electronics), Materials science, Physical modelling, Computer science, Geology, Composite material, Geotechnical engineering, TelecommunicationsTop concepts (fields/topics) attached by OpenAlex
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0Total citation count in OpenAlex
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