Investigation of DC and RF Characteristics of Spacer Layer Thickness Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on β-Ga 2 O 3 Substrate Article Swipe
Trupti Ranjan Lenka
,
G. Purnachandra Rao
,
Nour El I. Boukortt
,
Hieu Pham Trung Nguyen
·
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.22541/au.166990184.47373634/v1
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.22541/au.166990184.47373634/v1
In this article, the performance analysis of recessed gate and field-plated III-nitride Nano-HEMT (High Electron Mobility Transistor) developed on β-Ga O substrate with and without AlN spacer layer is studied. The two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface is crucial in changing the characteristics of AlGaN/GaN HEMTs. The different transport, DC, and AC characteristics of the proposed III-nitride HEMT with spacer layer are numerically simulated and compared with the HEMT without spacer layer. The major findings of this research demonstrate that the AlN spacer layers large band off set, strong polarisation field, and high barrier allow the increased concentration of 2DEG, when it is introduced between AlGaN/GaN interface. Furthermore, the AlN layer moves the 2DEG distribution shifts from the surface, which diminishes interface scattering. Further, AlN thickness variation influences the polarisation field and conduction band offset, which impacts the concentration and mobility of 2DEG.
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Metadata
- Type
- preprint
- Language
- en
- Landing Page
- https://doi.org/10.22541/au.166990184.47373634/v1
- https://www.authorea.com/doi/pdf/10.22541/au.166990184.47373634
- OA Status
- gold
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4310523147
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W4310523147Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.22541/au.166990184.47373634/v1Digital Object Identifier
- Title
-
Investigation of DC and RF Characteristics of Spacer Layer Thickness Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on β-Ga 2 O 3 SubstrateWork title
- Type
-
preprintOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2022Year of publication
- Publication date
-
2022-12-01Full publication date if available
- Authors
-
Trupti Ranjan Lenka, G. Purnachandra Rao, Nour El I. Boukortt, Hieu Pham Trung NguyenList of authors in order
- Landing page
-
https://doi.org/10.22541/au.166990184.47373634/v1Publisher landing page
- PDF URL
-
https://www.authorea.com/doi/pdf/10.22541/au.166990184.47373634Direct link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
-
https://www.authorea.com/doi/pdf/10.22541/au.166990184.47373634Direct OA link when available
- Concepts
-
High-electron-mobility transistor, Materials science, Optoelectronics, Nitride, Barrier layer, Layer (electronics), Substrate (aquarium), Gallium nitride, Transistor, Nanotechnology, Electrical engineering, Oceanography, Geology, Engineering, VoltageTop concepts (fields/topics) attached by OpenAlex
- Cited by
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0Total citation count in OpenAlex
- Related works (count)
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10Other works algorithmically related by OpenAlex
Full payload
| id | https://openalex.org/W4310523147 |
|---|---|
| doi | https://doi.org/10.22541/au.166990184.47373634/v1 |
| ids.doi | https://doi.org/10.22541/au.166990184.47373634/v1 |
| ids.openalex | https://openalex.org/W4310523147 |
| fwci | 0.0 |
| type | preprint |
| title | Investigation of DC and RF Characteristics of Spacer Layer Thickness Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on β-Ga 2 O 3 Substrate |
| biblio.issue | |
| biblio.volume | |
| biblio.last_page | |
| biblio.first_page | |
| topics[0].id | https://openalex.org/T12529 |
| topics[0].field.id | https://openalex.org/fields/25 |
| topics[0].field.display_name | Materials Science |
| topics[0].score | 0.9998999834060669 |
| topics[0].domain.id | https://openalex.org/domains/3 |
| topics[0].domain.display_name | Physical Sciences |
| topics[0].subfield.id | https://openalex.org/subfields/2504 |
| topics[0].subfield.display_name | Electronic, Optical and Magnetic Materials |
| topics[0].display_name | Ga2O3 and related materials |
| topics[1].id | https://openalex.org/T10099 |
| topics[1].field.id | https://openalex.org/fields/31 |
| topics[1].field.display_name | Physics and Astronomy |
| topics[1].score | 0.9994000196456909 |
| topics[1].domain.id | https://openalex.org/domains/3 |
| topics[1].domain.display_name | Physical Sciences |
| topics[1].subfield.id | https://openalex.org/subfields/3104 |
| topics[1].subfield.display_name | Condensed Matter Physics |
| topics[1].display_name | GaN-based semiconductor devices and materials |
| topics[2].id | https://openalex.org/T10472 |
| topics[2].field.id | https://openalex.org/fields/22 |
| topics[2].field.display_name | Engineering |
| topics[2].score | 0.9988999962806702 |
| topics[2].domain.id | https://openalex.org/domains/3 |
| topics[2].domain.display_name | Physical Sciences |
| topics[2].subfield.id | https://openalex.org/subfields/2208 |
| topics[2].subfield.display_name | Electrical and Electronic Engineering |
| topics[2].display_name | Semiconductor materials and devices |
| is_xpac | False |
| apc_list | |
| apc_paid | |
| concepts[0].id | https://openalex.org/C162057924 |
| concepts[0].level | 4 |
| concepts[0].score | 0.8538193702697754 |
| concepts[0].wikidata | https://www.wikidata.org/wiki/Q1617706 |
| concepts[0].display_name | High-electron-mobility transistor |
| concepts[1].id | https://openalex.org/C192562407 |
| concepts[1].level | 0 |
| concepts[1].score | 0.8021104335784912 |
| concepts[1].wikidata | https://www.wikidata.org/wiki/Q228736 |
| concepts[1].display_name | Materials science |
| concepts[2].id | https://openalex.org/C49040817 |
| concepts[2].level | 1 |
| concepts[2].score | 0.7107290625572205 |
| concepts[2].wikidata | https://www.wikidata.org/wiki/Q193091 |
| concepts[2].display_name | Optoelectronics |
| concepts[3].id | https://openalex.org/C194760766 |
| concepts[3].level | 3 |
| concepts[3].score | 0.619076669216156 |
| concepts[3].wikidata | https://www.wikidata.org/wiki/Q410851 |
| concepts[3].display_name | Nitride |
| concepts[4].id | https://openalex.org/C2779833192 |
| concepts[4].level | 3 |
| concepts[4].score | 0.5719410181045532 |
| concepts[4].wikidata | https://www.wikidata.org/wiki/Q17015866 |
| concepts[4].display_name | Barrier layer |
| concepts[5].id | https://openalex.org/C2779227376 |
| concepts[5].level | 2 |
| concepts[5].score | 0.5263118743896484 |
| concepts[5].wikidata | https://www.wikidata.org/wiki/Q6505497 |
| concepts[5].display_name | Layer (electronics) |
| concepts[6].id | https://openalex.org/C2777289219 |
| concepts[6].level | 2 |
| concepts[6].score | 0.515108048915863 |
| concepts[6].wikidata | https://www.wikidata.org/wiki/Q7632154 |
| concepts[6].display_name | Substrate (aquarium) |
| concepts[7].id | https://openalex.org/C2778871202 |
| concepts[7].level | 3 |
| concepts[7].score | 0.5056216716766357 |
| concepts[7].wikidata | https://www.wikidata.org/wiki/Q411713 |
| concepts[7].display_name | Gallium nitride |
| concepts[8].id | https://openalex.org/C172385210 |
| concepts[8].level | 3 |
| concepts[8].score | 0.4562976360321045 |
| concepts[8].wikidata | https://www.wikidata.org/wiki/Q5339 |
| concepts[8].display_name | Transistor |
| concepts[9].id | https://openalex.org/C171250308 |
| concepts[9].level | 1 |
| concepts[9].score | 0.19717302918434143 |
| concepts[9].wikidata | https://www.wikidata.org/wiki/Q11468 |
| concepts[9].display_name | Nanotechnology |
| concepts[10].id | https://openalex.org/C119599485 |
| concepts[10].level | 1 |
| concepts[10].score | 0.09877827763557434 |
| concepts[10].wikidata | https://www.wikidata.org/wiki/Q43035 |
| concepts[10].display_name | Electrical engineering |
| concepts[11].id | https://openalex.org/C111368507 |
| concepts[11].level | 1 |
| concepts[11].score | 0.0 |
| concepts[11].wikidata | https://www.wikidata.org/wiki/Q43518 |
| concepts[11].display_name | Oceanography |
| concepts[12].id | https://openalex.org/C127313418 |
| concepts[12].level | 0 |
| concepts[12].score | 0.0 |
| concepts[12].wikidata | https://www.wikidata.org/wiki/Q1069 |
| concepts[12].display_name | Geology |
| concepts[13].id | https://openalex.org/C127413603 |
| concepts[13].level | 0 |
| concepts[13].score | 0.0 |
| concepts[13].wikidata | https://www.wikidata.org/wiki/Q11023 |
| concepts[13].display_name | Engineering |
| concepts[14].id | https://openalex.org/C165801399 |
| concepts[14].level | 2 |
| concepts[14].score | 0.0 |
| concepts[14].wikidata | https://www.wikidata.org/wiki/Q25428 |
| concepts[14].display_name | Voltage |
| keywords[0].id | https://openalex.org/keywords/high-electron-mobility-transistor |
| keywords[0].score | 0.8538193702697754 |
| keywords[0].display_name | High-electron-mobility transistor |
| keywords[1].id | https://openalex.org/keywords/materials-science |
| keywords[1].score | 0.8021104335784912 |
| keywords[1].display_name | Materials science |
| keywords[2].id | https://openalex.org/keywords/optoelectronics |
| keywords[2].score | 0.7107290625572205 |
| keywords[2].display_name | Optoelectronics |
| keywords[3].id | https://openalex.org/keywords/nitride |
| keywords[3].score | 0.619076669216156 |
| keywords[3].display_name | Nitride |
| keywords[4].id | https://openalex.org/keywords/barrier-layer |
| keywords[4].score | 0.5719410181045532 |
| keywords[4].display_name | Barrier layer |
| keywords[5].id | https://openalex.org/keywords/layer |
| keywords[5].score | 0.5263118743896484 |
| keywords[5].display_name | Layer (electronics) |
| keywords[6].id | https://openalex.org/keywords/substrate |
| keywords[6].score | 0.515108048915863 |
| keywords[6].display_name | Substrate (aquarium) |
| keywords[7].id | https://openalex.org/keywords/gallium-nitride |
| keywords[7].score | 0.5056216716766357 |
| keywords[7].display_name | Gallium nitride |
| keywords[8].id | https://openalex.org/keywords/transistor |
| keywords[8].score | 0.4562976360321045 |
| keywords[8].display_name | Transistor |
| keywords[9].id | https://openalex.org/keywords/nanotechnology |
| keywords[9].score | 0.19717302918434143 |
| keywords[9].display_name | Nanotechnology |
| keywords[10].id | https://openalex.org/keywords/electrical-engineering |
| keywords[10].score | 0.09877827763557434 |
| keywords[10].display_name | Electrical engineering |
| language | en |
| locations[0].id | doi:10.22541/au.166990184.47373634/v1 |
| locations[0].is_oa | True |
| locations[0].source | |
| locations[0].license | |
| locations[0].pdf_url | https://www.authorea.com/doi/pdf/10.22541/au.166990184.47373634 |
| locations[0].version | acceptedVersion |
| locations[0].raw_type | posted-content |
| locations[0].license_id | |
| locations[0].is_accepted | True |
| locations[0].is_published | False |
| locations[0].raw_source_name | |
| locations[0].landing_page_url | https://doi.org/10.22541/au.166990184.47373634/v1 |
| indexed_in | crossref |
| authorships[0].author.id | https://openalex.org/A5038501680 |
| authorships[0].author.orcid | https://orcid.org/0000-0002-8002-3901 |
| authorships[0].author.display_name | Trupti Ranjan Lenka |
| authorships[0].countries | IN |
| authorships[0].affiliations[0].institution_ids | https://openalex.org/I151903974 |
| authorships[0].affiliations[0].raw_affiliation_string | National Institute of Technology Silchar |
| authorships[0].institutions[0].id | https://openalex.org/I151903974 |
| authorships[0].institutions[0].ror | https://ror.org/001ws2a36 |
| authorships[0].institutions[0].type | education |
| authorships[0].institutions[0].lineage | https://openalex.org/I151903974 |
| authorships[0].institutions[0].country_code | IN |
| authorships[0].institutions[0].display_name | National Institute Of Technology Silchar |
| authorships[0].author_position | first |
| authorships[0].raw_author_name | Trupti Lenka |
| authorships[0].is_corresponding | False |
| authorships[0].raw_affiliation_strings | National Institute of Technology Silchar |
| authorships[1].author.id | https://openalex.org/A5072590957 |
| authorships[1].author.orcid | |
| authorships[1].author.display_name | G. Purnachandra Rao |
| authorships[1].countries | IN |
| authorships[1].affiliations[0].institution_ids | https://openalex.org/I151903974 |
| authorships[1].affiliations[0].raw_affiliation_string | National Institute of Technology Silchar |
| authorships[1].institutions[0].id | https://openalex.org/I151903974 |
| authorships[1].institutions[0].ror | https://ror.org/001ws2a36 |
| authorships[1].institutions[0].type | education |
| authorships[1].institutions[0].lineage | https://openalex.org/I151903974 |
| authorships[1].institutions[0].country_code | IN |
| authorships[1].institutions[0].display_name | National Institute Of Technology Silchar |
| authorships[1].author_position | middle |
| authorships[1].raw_author_name | G. Purnachandra Rao |
| authorships[1].is_corresponding | False |
| authorships[1].raw_affiliation_strings | National Institute of Technology Silchar |
| authorships[2].author.id | https://openalex.org/A5076698927 |
| authorships[2].author.orcid | https://orcid.org/0000-0001-9517-9063 |
| authorships[2].author.display_name | Nour El I. Boukortt |
| authorships[2].countries | KW |
| authorships[2].affiliations[0].institution_ids | https://openalex.org/I4210111408 |
| authorships[2].affiliations[0].raw_affiliation_string | Kuwait College of Science and Technology |
| authorships[2].institutions[0].id | https://openalex.org/I4210111408 |
| authorships[2].institutions[0].ror | https://ror.org/01vjvsj67 |
| authorships[2].institutions[0].type | education |
| authorships[2].institutions[0].lineage | https://openalex.org/I4210111408 |
| authorships[2].institutions[0].country_code | KW |
| authorships[2].institutions[0].display_name | Kuwait College of Science and Technology |
| authorships[2].author_position | middle |
| authorships[2].raw_author_name | N. El. I. Boukortt |
| authorships[2].is_corresponding | False |
| authorships[2].raw_affiliation_strings | Kuwait College of Science and Technology |
| authorships[3].author.id | https://openalex.org/A5017292372 |
| authorships[3].author.orcid | https://orcid.org/0000-0003-1129-9581 |
| authorships[3].author.display_name | Hieu Pham Trung Nguyen |
| authorships[3].countries | US |
| authorships[3].affiliations[0].institution_ids | https://openalex.org/I118118575 |
| authorships[3].affiliations[0].raw_affiliation_string | New Jersey Institute of Technology |
| authorships[3].institutions[0].id | https://openalex.org/I118118575 |
| authorships[3].institutions[0].ror | https://ror.org/05e74xb87 |
| authorships[3].institutions[0].type | education |
| authorships[3].institutions[0].lineage | https://openalex.org/I118118575 |
| authorships[3].institutions[0].country_code | US |
| authorships[3].institutions[0].display_name | New Jersey Institute of Technology |
| authorships[3].author_position | last |
| authorships[3].raw_author_name | Hieu Nguyen |
| authorships[3].is_corresponding | False |
| authorships[3].raw_affiliation_strings | New Jersey Institute of Technology |
| has_content.pdf | True |
| has_content.grobid_xml | True |
| is_paratext | False |
| open_access.is_oa | True |
| open_access.oa_url | https://www.authorea.com/doi/pdf/10.22541/au.166990184.47373634 |
| open_access.oa_status | gold |
| open_access.any_repository_has_fulltext | False |
| created_date | 2025-10-10T00:00:00 |
| display_name | Investigation of DC and RF Characteristics of Spacer Layer Thickness Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on β-Ga 2 O 3 Substrate |
| has_fulltext | False |
| is_retracted | False |
| updated_date | 2025-11-06T03:46:38.306776 |
| primary_topic.id | https://openalex.org/T12529 |
| primary_topic.field.id | https://openalex.org/fields/25 |
| primary_topic.field.display_name | Materials Science |
| primary_topic.score | 0.9998999834060669 |
| primary_topic.domain.id | https://openalex.org/domains/3 |
| primary_topic.domain.display_name | Physical Sciences |
| primary_topic.subfield.id | https://openalex.org/subfields/2504 |
| primary_topic.subfield.display_name | Electronic, Optical and Magnetic Materials |
| primary_topic.display_name | Ga2O3 and related materials |
| related_works | https://openalex.org/W2472160638, https://openalex.org/W3209950509, https://openalex.org/W2559825181, https://openalex.org/W4377089489, https://openalex.org/W1975307200, https://openalex.org/W3042786859, https://openalex.org/W2466508933, https://openalex.org/W4313611767, https://openalex.org/W4385217635, https://openalex.org/W244742193 |
| cited_by_count | 0 |
| locations_count | 1 |
| best_oa_location.id | doi:10.22541/au.166990184.47373634/v1 |
| best_oa_location.is_oa | True |
| best_oa_location.source | |
| best_oa_location.license | |
| best_oa_location.pdf_url | https://www.authorea.com/doi/pdf/10.22541/au.166990184.47373634 |
| best_oa_location.version | acceptedVersion |
| best_oa_location.raw_type | posted-content |
| best_oa_location.license_id | |
| best_oa_location.is_accepted | True |
| best_oa_location.is_published | False |
| best_oa_location.raw_source_name | |
| best_oa_location.landing_page_url | https://doi.org/10.22541/au.166990184.47373634/v1 |
| primary_location.id | doi:10.22541/au.166990184.47373634/v1 |
| primary_location.is_oa | True |
| primary_location.source | |
| primary_location.license | |
| primary_location.pdf_url | https://www.authorea.com/doi/pdf/10.22541/au.166990184.47373634 |
| primary_location.version | acceptedVersion |
| primary_location.raw_type | posted-content |
| primary_location.license_id | |
| primary_location.is_accepted | True |
| primary_location.is_published | False |
| primary_location.raw_source_name | |
| primary_location.landing_page_url | https://doi.org/10.22541/au.166990184.47373634/v1 |
| publication_date | 2022-12-01 |
| publication_year | 2022 |
| referenced_works_count | 0 |
| abstract_inverted_index.O | 20 |
| abstract_inverted_index.AC | 54 |
| abstract_inverted_index.In | 0 |
| abstract_inverted_index.at | 36 |
| abstract_inverted_index.in | 42 |
| abstract_inverted_index.is | 28, 40, 105 |
| abstract_inverted_index.it | 104 |
| abstract_inverted_index.of | 6, 46, 56, 78, 101, 144 |
| abstract_inverted_index.on | 18 |
| abstract_inverted_index.AlN | 25, 84, 112, 127 |
| abstract_inverted_index.DC, | 52 |
| abstract_inverted_index.The | 30, 49, 75 |
| abstract_inverted_index.and | 9, 23, 53, 67, 94, 134, 142 |
| abstract_inverted_index.are | 64 |
| abstract_inverted_index.gas | 33 |
| abstract_inverted_index.off | 89 |
| abstract_inverted_index.the | 3, 37, 44, 57, 70, 83, 98, 111, 115, 120, 131, 140 |
| abstract_inverted_index.2DEG | 116 |
| abstract_inverted_index.HEMT | 60, 71 |
| abstract_inverted_index.band | 88, 136 |
| abstract_inverted_index.from | 119 |
| abstract_inverted_index.gate | 8 |
| abstract_inverted_index.high | 95 |
| abstract_inverted_index.set, | 90 |
| abstract_inverted_index.that | 82 |
| abstract_inverted_index.this | 1, 79 |
| abstract_inverted_index.when | 103 |
| abstract_inverted_index.with | 22, 61, 69 |
| abstract_inverted_index.(High | 13 |
| abstract_inverted_index.2DEG, | 102 |
| abstract_inverted_index.2DEG. | 145 |
| abstract_inverted_index.allow | 97 |
| abstract_inverted_index.field | 133 |
| abstract_inverted_index.large | 87 |
| abstract_inverted_index.layer | 27, 63, 113 |
| abstract_inverted_index.major | 76 |
| abstract_inverted_index.moves | 114 |
| abstract_inverted_index.which | 122, 138 |
| abstract_inverted_index.β-Ga | 19 |
| abstract_inverted_index.(2DEG) | 34 |
| abstract_inverted_index.HEMTs. | 48 |
| abstract_inverted_index.field, | 93 |
| abstract_inverted_index.formed | 35 |
| abstract_inverted_index.layer. | 74 |
| abstract_inverted_index.layers | 86 |
| abstract_inverted_index.shifts | 118 |
| abstract_inverted_index.spacer | 26, 62, 73, 85 |
| abstract_inverted_index.strong | 91 |
| abstract_inverted_index.barrier | 96 |
| abstract_inverted_index.between | 107 |
| abstract_inverted_index.crucial | 41 |
| abstract_inverted_index.impacts | 139 |
| abstract_inverted_index.offset, | 137 |
| abstract_inverted_index.without | 24, 72 |
| abstract_inverted_index.Electron | 14 |
| abstract_inverted_index.Further, | 126 |
| abstract_inverted_index.Mobility | 15 |
| abstract_inverted_index.analysis | 5 |
| abstract_inverted_index.article, | 2 |
| abstract_inverted_index.changing | 43 |
| abstract_inverted_index.compared | 68 |
| abstract_inverted_index.electron | 32 |
| abstract_inverted_index.findings | 77 |
| abstract_inverted_index.mobility | 143 |
| abstract_inverted_index.proposed | 58 |
| abstract_inverted_index.recessed | 7 |
| abstract_inverted_index.research | 80 |
| abstract_inverted_index.studied. | 29 |
| abstract_inverted_index.surface, | 121 |
| abstract_inverted_index.AlGaN/GaN | 38, 47, 108 |
| abstract_inverted_index.Nano-HEMT | 12 |
| abstract_inverted_index.developed | 17 |
| abstract_inverted_index.different | 50 |
| abstract_inverted_index.increased | 99 |
| abstract_inverted_index.interface | 39, 124 |
| abstract_inverted_index.simulated | 66 |
| abstract_inverted_index.substrate | 21 |
| abstract_inverted_index.thickness | 128 |
| abstract_inverted_index.variation | 129 |
| abstract_inverted_index.conduction | 135 |
| abstract_inverted_index.diminishes | 123 |
| abstract_inverted_index.influences | 130 |
| abstract_inverted_index.interface. | 109 |
| abstract_inverted_index.introduced | 106 |
| abstract_inverted_index.transport, | 51 |
| abstract_inverted_index.III-nitride | 11, 59 |
| abstract_inverted_index.Transistor) | 16 |
| abstract_inverted_index.demonstrate | 81 |
| abstract_inverted_index.numerically | 65 |
| abstract_inverted_index.performance | 4 |
| abstract_inverted_index.scattering. | 125 |
| abstract_inverted_index.Furthermore, | 110 |
| abstract_inverted_index.distribution | 117 |
| abstract_inverted_index.field-plated | 10 |
| abstract_inverted_index.polarisation | 92, 132 |
| abstract_inverted_index.concentration | 100, 141 |
| abstract_inverted_index.characteristics | 45, 55 |
| abstract_inverted_index.two-dimensional | 31 |
| cited_by_percentile_year | |
| countries_distinct_count | 3 |
| institutions_distinct_count | 4 |
| citation_normalized_percentile.value | 0.1111076 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |