Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC Article Swipe

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Wafer Radiation hardening Materials science Large Hadron Collider Pixel Silicon Optoelectronics Epitaxy Detector Planar Radiation Optics Layer (electronics) Physics Nanotechnology Computer science Nuclear physics Computer graphics (images)

M. Bubna , D. Bortoletto , G. Bolla , I. P. J. Shipsey , Michael J. Manfra , Khurram Imran Khan , K. Arndt , N. Hinton , A. Godshalk , A. Kumar , D. Menasce , L. Moroni , J. Chramowicz , C. M. Lei , A. Prosser , R. Rivera , L. Uplegger , M. Lo Vetere , E. Robutti , F. Ferro , F. Ravera , M. Costa ·

YOU? · · 2015 · Open Access · · DOI: https://doi.org/10.1088/1748-0221/10/08/c08002 · OA: W2242194140

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm–2s–1 and collect ~ 3000fb–1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.