Manipulating carrier transport in static Schottky MSM structure via mechanical friction Article Swipe
YOU?
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· 2024
· Open Access
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· DOI: https://doi.org/10.1007/s44275-024-00012-1
Expanding the metal–semiconductor–metal (MSM) structure to encompass a broader range of passive networks is crucial for enhancing the understanding of carrier transport theory and broadening its application scope. Here, a mechanism to modulate the Schottky barrier using mechanical friction is proposed to generate electricity. The findings reveal that contact electrification occurs between the MSM structure and the friction medium, leading to charge redistribution within the system and the application of a bias voltage across the Schottky barrier via a conductive bridge. The conductive friction medium, whether liquid or solid, functions analogously to a conventional physical bias in a Schottky barrier diode, enabling the efficient regulation of the carriers. Aligning the electronegativity of the friction medium with that of the MSM structure, in accordance with the triboelectric sequence, enables the Schottky MSM structure to switch between AC and DC outputs, further validating the proposed carrier transport mechanism. Additionally, we showcase a constant generator composed of a parallel diode array to harvest energy from droplets excitation and the generation of a control signal through solid friction. This work advances the theoretical understanding of the Schottky MSM structure driven by mechanical friction and highlights its potential applications in passive networks.
Related Topics
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1007/s44275-024-00012-1
- OA Status
- hybrid
- Cited By
- 1
- References
- 26
- Related Works
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- OpenAlex ID
- https://openalex.org/W4404664602
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4404664602Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1007/s44275-024-00012-1Digital Object Identifier
- Title
-
Manipulating carrier transport in static Schottky MSM structure via mechanical frictionWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2024Year of publication
- Publication date
-
2024-11-25Full publication date if available
- Authors
-
Yahui Li, Zhiyuan Hu, Han Ren, Yang-Tao Yu, Mingyu Zhang, Mengqiu Li, Fei Wang, Sicheng Chen, Yuanjin Zheng, Zhuoqing YangList of authors in order
- Landing page
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https://doi.org/10.1007/s44275-024-00012-1Publisher landing page
- Open access
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YesWhether a free full text is available
- OA status
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hybridOpen access status per OpenAlex
- OA URL
-
https://doi.org/10.1007/s44275-024-00012-1Direct OA link when available
- Concepts
-
Materials science, Schottky diode, Optoelectronics, DiodeTop concepts (fields/topics) attached by OpenAlex
- Cited by
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1Total citation count in OpenAlex
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2025: 1Per-year citation counts (last 5 years)
- References (count)
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26Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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| referenced_works | https://openalex.org/W4321598727, https://openalex.org/W4388701290, https://openalex.org/W3160045927, https://openalex.org/W2925008789, https://openalex.org/W1975851231, https://openalex.org/W3128404836, https://openalex.org/W3187601183, https://openalex.org/W4312106762, https://openalex.org/W2018668129, https://openalex.org/W2154666994, https://openalex.org/W1989146022, https://openalex.org/W2127535410, https://openalex.org/W2012252007, https://openalex.org/W4386078017, https://openalex.org/W2804762466, https://openalex.org/W3159633837, https://openalex.org/W3100394704, https://openalex.org/W3005086951, https://openalex.org/W4285126371, https://openalex.org/W3175921693, https://openalex.org/W3207208542, https://openalex.org/W3108618359, https://openalex.org/W4389331329, https://openalex.org/W3038512781, https://openalex.org/W4393195169, https://openalex.org/W4200506535 |
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