Memory Device Based on a Nano-Granulars and Nano-Worms Structured Mos2 Active Layer: The Origin of Resistive Switching Characteristics Article Swipe
Shubham Sharma
,
Davinder Kaur
·
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.2139/ssrn.4644348
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.2139/ssrn.4644348
Related Topics
Concepts
Metadata
- Type
- preprint
- Language
- en
- Landing Page
- https://doi.org/10.2139/ssrn.4644348
- OA Status
- green
- References
- 35
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4389004124
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4389004124Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.2139/ssrn.4644348Digital Object Identifier
- Title
-
Memory Device Based on a Nano-Granulars and Nano-Worms Structured Mos2 Active Layer: The Origin of Resistive Switching CharacteristicsWork title
- Type
-
preprintOpenAlex work type
- Language
-
enPrimary language
- Publication year
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2023Year of publication
- Publication date
-
2023-01-01Full publication date if available
- Authors
-
Shubham Sharma, Davinder KaurList of authors in order
- Landing page
-
https://doi.org/10.2139/ssrn.4644348Publisher landing page
- Open access
-
YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- OA URL
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https://doi.org/10.2139/ssrn.4644348Direct OA link when available
- Concepts
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Nano-, Layer (electronics), Resistive touchscreen, Active layer, Resistive random-access memory, Computer science, Materials science, Optoelectronics, Nanotechnology, Electrical engineering, Engineering, Voltage, Composite material, Operating system, Thin-film transistorTop concepts (fields/topics) attached by OpenAlex
- Cited by
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0Total citation count in OpenAlex
- References (count)
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35Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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