Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters Article Swipe
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· 2019
· Open Access
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· DOI: https://doi.org/10.1109/access.2019.2958059
· OA: W2996899807
This paper presents a GaN based synchronous buck DC-DC converter, which monolithically integrates gate drivers and a half-bridge power stage in a 3-μm enhancement-mode (E-mode) GaN-on-Si process. The fabricated synchronous converter with integrated gate drivers is based on E-mode GaN MIS-HFETs (metal-insulator-semiconductor heterojunction-field-effect-transistors), which have a large gate swing of 10 V due to the insertion of 20 nm high-k gate insulator Al<sub>2</sub>O<sub>3</sub>. At 100 kHz, the proposed DC-DC integrated circuits (ICs) exhibit good thermal stability at high temperatures up to 250 °C for 25 V down conversion. Furthermore, four different designs (asynchronous and synchronous) including converters with external drivers were systematically evaluated at different input voltages and duty cycles, the GaN-based DC-DC converters with integrated gate drivers exhibit small voltage overshoots and oscillations due to reduced parasitic inductance and chip size. These results validate the advantages of monolithic, lateral integration of half-bridge GaN ICs with gate drivers for high temperature power converters.
