Monolithic Pixel Development in 180 nm CMOS for the Outer Pixel Layers in the ATLAS Experiment Article Swipe

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T. Kugathasan , R. L. Bates , C. M. Buttar , I. Berdalović , Bastien Blochet , R. Cardella , Marco Dalla , N. Egidos , T. Hemperek , Jacobus Willem VAN HOORNE , D. Maneuski , Cesar Augusto Marin Tobon , Κωνσταντίνος Μουστάκας , H. Mugnier , L. Musa , H. Pernegger , P. Riedler , Christian Johann Riegel , J. Rousset , C. Sbarra , D. Schaefer , M. Schioppa , A. Sharma , W. Snoeys , Carlos Solans Sánchez , Tienyang Wang , Wermes Norbert ·

YOU? · · 2018 · Open Access · · DOI: https://doi.org/10.22323/1.313.0047 · OA: W4232423696

The ATLAS experiment at CERN plans to upgrade its Inner Tracking System for the High-Luminosity LHC in 2026. After the ALPIDE monolithic sensor for the ALICE ITS was successfully implemented in a 180 nm CMOS Imaging Sensor technology, the process was modified to combine full sensor depletion with a low sensor capacitance (≈ 2.5fF), for increased radiation tolerance and low analog power consumption. Efficiency and charge collection time were measured with comparisons before and after irradiation. This paper summarises the measurements and the ATLAS-specific development towards full-reticle size CMOS sensors and modules in this modified technology.