MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots Article Swipe
Daniel Richter
,
R. Hafenbrak
,
Klaus D. Jöns
,
W-M Schulz
,
M. Eichfelder
,
R. Roßbach
,
Michael Jetter
,
Peter Michler
·
YOU?
·
· 2010
· Open Access
·
· DOI: https://doi.org/10.1088/1742-6596/245/1/012009
YOU?
·
· 2010
· Open Access
·
· DOI: https://doi.org/10.1088/1742-6596/245/1/012009
To achieve a low densitiy of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.
Related Topics
Concepts
Quantum dot
Photoluminescence
Laser linewidth
Metalorganic vapour phase epitaxy
Materials science
Optoelectronics
Annealing (glass)
Quantum dot laser
Layer (electronics)
Nanotechnology
Optics
Physics
Epitaxy
Semiconductor laser theory
Laser
Semiconductor
Composite material
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1088/1742-6596/245/1/012009
- https://iopscience.iop.org/article/10.1088/1742-6596/245/1/012009/pdf
- OA Status
- diamond
- References
- 9
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2008914895
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W2008914895Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1088/1742-6596/245/1/012009Digital Object Identifier
- Title
-
MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dotsWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2010Year of publication
- Publication date
-
2010-09-01Full publication date if available
- Authors
-
Daniel Richter, R. Hafenbrak, Klaus D. Jöns, W-M Schulz, M. Eichfelder, R. Roßbach, Michael Jetter, Peter MichlerList of authors in order
- Landing page
-
https://doi.org/10.1088/1742-6596/245/1/012009Publisher landing page
- PDF URL
-
https://iopscience.iop.org/article/10.1088/1742-6596/245/1/012009/pdfDirect link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
diamondOpen access status per OpenAlex
- OA URL
-
https://iopscience.iop.org/article/10.1088/1742-6596/245/1/012009/pdfDirect OA link when available
- Concepts
-
Quantum dot, Photoluminescence, Laser linewidth, Metalorganic vapour phase epitaxy, Materials science, Optoelectronics, Annealing (glass), Quantum dot laser, Layer (electronics), Nanotechnology, Optics, Physics, Epitaxy, Semiconductor laser theory, Laser, Semiconductor, Composite materialTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
0Total citation count in OpenAlex
- References (count)
-
9Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
Full payload
| id | https://openalex.org/W2008914895 |
|---|---|
| doi | https://doi.org/10.1088/1742-6596/245/1/012009 |
| ids.doi | https://doi.org/10.1088/1742-6596/245/1/012009 |
| ids.mag | 2008914895 |
| ids.openalex | https://openalex.org/W2008914895 |
| fwci | 0.0 |
| type | article |
| title | MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots |
| biblio.issue | |
| biblio.volume | 245 |
| biblio.last_page | 012009 |
| biblio.first_page | 012009 |
| topics[0].id | https://openalex.org/T10022 |
| topics[0].field.id | https://openalex.org/fields/31 |
| topics[0].field.display_name | Physics and Astronomy |
| topics[0].score | 1.0 |
| topics[0].domain.id | https://openalex.org/domains/3 |
| topics[0].domain.display_name | Physical Sciences |
| topics[0].subfield.id | https://openalex.org/subfields/3107 |
| topics[0].subfield.display_name | Atomic and Molecular Physics, and Optics |
| topics[0].display_name | Semiconductor Quantum Structures and Devices |
| topics[1].id | https://openalex.org/T11429 |
| topics[1].field.id | https://openalex.org/fields/22 |
| topics[1].field.display_name | Engineering |
| topics[1].score | 0.9988999962806702 |
| topics[1].domain.id | https://openalex.org/domains/3 |
| topics[1].domain.display_name | Physical Sciences |
| topics[1].subfield.id | https://openalex.org/subfields/2208 |
| topics[1].subfield.display_name | Electrical and Electronic Engineering |
| topics[1].display_name | Semiconductor Lasers and Optical Devices |
| topics[2].id | https://openalex.org/T10321 |
| topics[2].field.id | https://openalex.org/fields/25 |
| topics[2].field.display_name | Materials Science |
| topics[2].score | 0.9987999796867371 |
| topics[2].domain.id | https://openalex.org/domains/3 |
| topics[2].domain.display_name | Physical Sciences |
| topics[2].subfield.id | https://openalex.org/subfields/2505 |
| topics[2].subfield.display_name | Materials Chemistry |
| topics[2].display_name | Quantum Dots Synthesis And Properties |
| is_xpac | False |
| apc_list | |
| apc_paid | |
| concepts[0].id | https://openalex.org/C124657808 |
| concepts[0].level | 2 |
| concepts[0].score | 0.9132323265075684 |
| concepts[0].wikidata | https://www.wikidata.org/wiki/Q1133068 |
| concepts[0].display_name | Quantum dot |
| concepts[1].id | https://openalex.org/C85080765 |
| concepts[1].level | 2 |
| concepts[1].score | 0.8452127575874329 |
| concepts[1].wikidata | https://www.wikidata.org/wiki/Q614893 |
| concepts[1].display_name | Photoluminescence |
| concepts[2].id | https://openalex.org/C142181693 |
| concepts[2].level | 3 |
| concepts[2].score | 0.8406842947006226 |
| concepts[2].wikidata | https://www.wikidata.org/wiki/Q6493080 |
| concepts[2].display_name | Laser linewidth |
| concepts[3].id | https://openalex.org/C175665537 |
| concepts[3].level | 4 |
| concepts[3].score | 0.7434885501861572 |
| concepts[3].wikidata | https://www.wikidata.org/wiki/Q1924991 |
| concepts[3].display_name | Metalorganic vapour phase epitaxy |
| concepts[4].id | https://openalex.org/C192562407 |
| concepts[4].level | 0 |
| concepts[4].score | 0.625485897064209 |
| concepts[4].wikidata | https://www.wikidata.org/wiki/Q228736 |
| concepts[4].display_name | Materials science |
| concepts[5].id | https://openalex.org/C49040817 |
| concepts[5].level | 1 |
| concepts[5].score | 0.6116153001785278 |
| concepts[5].wikidata | https://www.wikidata.org/wiki/Q193091 |
| concepts[5].display_name | Optoelectronics |
| concepts[6].id | https://openalex.org/C2777855556 |
| concepts[6].level | 2 |
| concepts[6].score | 0.4450939893722534 |
| concepts[6].wikidata | https://www.wikidata.org/wiki/Q4339544 |
| concepts[6].display_name | Annealing (glass) |
| concepts[7].id | https://openalex.org/C74130334 |
| concepts[7].level | 4 |
| concepts[7].score | 0.4359015226364136 |
| concepts[7].wikidata | https://www.wikidata.org/wiki/Q4252980 |
| concepts[7].display_name | Quantum dot laser |
| concepts[8].id | https://openalex.org/C2779227376 |
| concepts[8].level | 2 |
| concepts[8].score | 0.3480149507522583 |
| concepts[8].wikidata | https://www.wikidata.org/wiki/Q6505497 |
| concepts[8].display_name | Layer (electronics) |
| concepts[9].id | https://openalex.org/C171250308 |
| concepts[9].level | 1 |
| concepts[9].score | 0.20001524686813354 |
| concepts[9].wikidata | https://www.wikidata.org/wiki/Q11468 |
| concepts[9].display_name | Nanotechnology |
| concepts[10].id | https://openalex.org/C120665830 |
| concepts[10].level | 1 |
| concepts[10].score | 0.1680775284767151 |
| concepts[10].wikidata | https://www.wikidata.org/wiki/Q14620 |
| concepts[10].display_name | Optics |
| concepts[11].id | https://openalex.org/C121332964 |
| concepts[11].level | 0 |
| concepts[11].score | 0.15976190567016602 |
| concepts[11].wikidata | https://www.wikidata.org/wiki/Q413 |
| concepts[11].display_name | Physics |
| concepts[12].id | https://openalex.org/C110738630 |
| concepts[12].level | 3 |
| concepts[12].score | 0.12288475036621094 |
| concepts[12].wikidata | https://www.wikidata.org/wiki/Q1135540 |
| concepts[12].display_name | Epitaxy |
| concepts[13].id | https://openalex.org/C121477167 |
| concepts[13].level | 3 |
| concepts[13].score | 0.10492616891860962 |
| concepts[13].wikidata | https://www.wikidata.org/wiki/Q17154002 |
| concepts[13].display_name | Semiconductor laser theory |
| concepts[14].id | https://openalex.org/C520434653 |
| concepts[14].level | 2 |
| concepts[14].score | 0.10426631569862366 |
| concepts[14].wikidata | https://www.wikidata.org/wiki/Q38867 |
| concepts[14].display_name | Laser |
| concepts[15].id | https://openalex.org/C108225325 |
| concepts[15].level | 2 |
| concepts[15].score | 0.08417266607284546 |
| concepts[15].wikidata | https://www.wikidata.org/wiki/Q11456 |
| concepts[15].display_name | Semiconductor |
| concepts[16].id | https://openalex.org/C159985019 |
| concepts[16].level | 1 |
| concepts[16].score | 0.0 |
| concepts[16].wikidata | https://www.wikidata.org/wiki/Q181790 |
| concepts[16].display_name | Composite material |
| keywords[0].id | https://openalex.org/keywords/quantum-dot |
| keywords[0].score | 0.9132323265075684 |
| keywords[0].display_name | Quantum dot |
| keywords[1].id | https://openalex.org/keywords/photoluminescence |
| keywords[1].score | 0.8452127575874329 |
| keywords[1].display_name | Photoluminescence |
| keywords[2].id | https://openalex.org/keywords/laser-linewidth |
| keywords[2].score | 0.8406842947006226 |
| keywords[2].display_name | Laser linewidth |
| keywords[3].id | https://openalex.org/keywords/metalorganic-vapour-phase-epitaxy |
| keywords[3].score | 0.7434885501861572 |
| keywords[3].display_name | Metalorganic vapour phase epitaxy |
| keywords[4].id | https://openalex.org/keywords/materials-science |
| keywords[4].score | 0.625485897064209 |
| keywords[4].display_name | Materials science |
| keywords[5].id | https://openalex.org/keywords/optoelectronics |
| keywords[5].score | 0.6116153001785278 |
| keywords[5].display_name | Optoelectronics |
| keywords[6].id | https://openalex.org/keywords/annealing |
| keywords[6].score | 0.4450939893722534 |
| keywords[6].display_name | Annealing (glass) |
| keywords[7].id | https://openalex.org/keywords/quantum-dot-laser |
| keywords[7].score | 0.4359015226364136 |
| keywords[7].display_name | Quantum dot laser |
| keywords[8].id | https://openalex.org/keywords/layer |
| keywords[8].score | 0.3480149507522583 |
| keywords[8].display_name | Layer (electronics) |
| keywords[9].id | https://openalex.org/keywords/nanotechnology |
| keywords[9].score | 0.20001524686813354 |
| keywords[9].display_name | Nanotechnology |
| keywords[10].id | https://openalex.org/keywords/optics |
| keywords[10].score | 0.1680775284767151 |
| keywords[10].display_name | Optics |
| keywords[11].id | https://openalex.org/keywords/physics |
| keywords[11].score | 0.15976190567016602 |
| keywords[11].display_name | Physics |
| keywords[12].id | https://openalex.org/keywords/epitaxy |
| keywords[12].score | 0.12288475036621094 |
| keywords[12].display_name | Epitaxy |
| keywords[13].id | https://openalex.org/keywords/semiconductor-laser-theory |
| keywords[13].score | 0.10492616891860962 |
| keywords[13].display_name | Semiconductor laser theory |
| keywords[14].id | https://openalex.org/keywords/laser |
| keywords[14].score | 0.10426631569862366 |
| keywords[14].display_name | Laser |
| keywords[15].id | https://openalex.org/keywords/semiconductor |
| keywords[15].score | 0.08417266607284546 |
| keywords[15].display_name | Semiconductor |
| language | en |
| locations[0].id | doi:10.1088/1742-6596/245/1/012009 |
| locations[0].is_oa | True |
| locations[0].source.id | https://openalex.org/S4210187594 |
| locations[0].source.issn | 1742-6588, 1742-6596 |
| locations[0].source.type | journal |
| locations[0].source.is_oa | True |
| locations[0].source.issn_l | 1742-6588 |
| locations[0].source.is_core | True |
| locations[0].source.is_in_doaj | False |
| locations[0].source.display_name | Journal of Physics Conference Series |
| locations[0].source.host_organization | https://openalex.org/P4310320083 |
| locations[0].source.host_organization_name | IOP Publishing |
| locations[0].source.host_organization_lineage | https://openalex.org/P4310320083 |
| locations[0].license | |
| locations[0].pdf_url | https://iopscience.iop.org/article/10.1088/1742-6596/245/1/012009/pdf |
| locations[0].version | publishedVersion |
| locations[0].raw_type | journal-article |
| locations[0].license_id | |
| locations[0].is_accepted | True |
| locations[0].is_published | True |
| locations[0].raw_source_name | Journal of Physics: Conference Series |
| locations[0].landing_page_url | https://doi.org/10.1088/1742-6596/245/1/012009 |
| indexed_in | crossref |
| authorships[0].author.id | https://openalex.org/A5102752637 |
| authorships[0].author.orcid | https://orcid.org/0009-0008-5065-9766 |
| authorships[0].author.display_name | Daniel Richter |
| authorships[0].countries | DE |
| authorships[0].affiliations[0].institution_ids | https://openalex.org/I100066346 |
| authorships[0].affiliations[0].raw_affiliation_string | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[0].institutions[0].id | https://openalex.org/I100066346 |
| authorships[0].institutions[0].ror | https://ror.org/04vnq7t77 |
| authorships[0].institutions[0].type | education |
| authorships[0].institutions[0].lineage | https://openalex.org/I100066346 |
| authorships[0].institutions[0].country_code | DE |
| authorships[0].institutions[0].display_name | University of Stuttgart |
| authorships[0].author_position | first |
| authorships[0].raw_author_name | D Richter |
| authorships[0].is_corresponding | False |
| authorships[0].raw_affiliation_strings | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[1].author.id | https://openalex.org/A5080235736 |
| authorships[1].author.orcid | |
| authorships[1].author.display_name | R. Hafenbrak |
| authorships[1].countries | DE |
| authorships[1].affiliations[0].institution_ids | https://openalex.org/I100066346 |
| authorships[1].affiliations[0].raw_affiliation_string | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[1].institutions[0].id | https://openalex.org/I100066346 |
| authorships[1].institutions[0].ror | https://ror.org/04vnq7t77 |
| authorships[1].institutions[0].type | education |
| authorships[1].institutions[0].lineage | https://openalex.org/I100066346 |
| authorships[1].institutions[0].country_code | DE |
| authorships[1].institutions[0].display_name | University of Stuttgart |
| authorships[1].author_position | middle |
| authorships[1].raw_author_name | R Hafenbrak |
| authorships[1].is_corresponding | False |
| authorships[1].raw_affiliation_strings | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[2].author.id | https://openalex.org/A5018458432 |
| authorships[2].author.orcid | https://orcid.org/0000-0002-5814-7510 |
| authorships[2].author.display_name | Klaus D. Jöns |
| authorships[2].countries | DE |
| authorships[2].affiliations[0].institution_ids | https://openalex.org/I100066346 |
| authorships[2].affiliations[0].raw_affiliation_string | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[2].institutions[0].id | https://openalex.org/I100066346 |
| authorships[2].institutions[0].ror | https://ror.org/04vnq7t77 |
| authorships[2].institutions[0].type | education |
| authorships[2].institutions[0].lineage | https://openalex.org/I100066346 |
| authorships[2].institutions[0].country_code | DE |
| authorships[2].institutions[0].display_name | University of Stuttgart |
| authorships[2].author_position | middle |
| authorships[2].raw_author_name | K D Jöns |
| authorships[2].is_corresponding | False |
| authorships[2].raw_affiliation_strings | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[3].author.id | https://openalex.org/A5111781263 |
| authorships[3].author.orcid | |
| authorships[3].author.display_name | W-M Schulz |
| authorships[3].countries | DE |
| authorships[3].affiliations[0].institution_ids | https://openalex.org/I100066346 |
| authorships[3].affiliations[0].raw_affiliation_string | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[3].institutions[0].id | https://openalex.org/I100066346 |
| authorships[3].institutions[0].ror | https://ror.org/04vnq7t77 |
| authorships[3].institutions[0].type | education |
| authorships[3].institutions[0].lineage | https://openalex.org/I100066346 |
| authorships[3].institutions[0].country_code | DE |
| authorships[3].institutions[0].display_name | University of Stuttgart |
| authorships[3].author_position | middle |
| authorships[3].raw_author_name | W-M Schulz |
| authorships[3].is_corresponding | False |
| authorships[3].raw_affiliation_strings | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[4].author.id | https://openalex.org/A5064233560 |
| authorships[4].author.orcid | |
| authorships[4].author.display_name | M. Eichfelder |
| authorships[4].countries | DE |
| authorships[4].affiliations[0].institution_ids | https://openalex.org/I100066346 |
| authorships[4].affiliations[0].raw_affiliation_string | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[4].institutions[0].id | https://openalex.org/I100066346 |
| authorships[4].institutions[0].ror | https://ror.org/04vnq7t77 |
| authorships[4].institutions[0].type | education |
| authorships[4].institutions[0].lineage | https://openalex.org/I100066346 |
| authorships[4].institutions[0].country_code | DE |
| authorships[4].institutions[0].display_name | University of Stuttgart |
| authorships[4].author_position | middle |
| authorships[4].raw_author_name | M Eichfelder |
| authorships[4].is_corresponding | False |
| authorships[4].raw_affiliation_strings | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[5].author.id | https://openalex.org/A5068383407 |
| authorships[5].author.orcid | |
| authorships[5].author.display_name | R. Roßbach |
| authorships[5].countries | DE |
| authorships[5].affiliations[0].institution_ids | https://openalex.org/I100066346 |
| authorships[5].affiliations[0].raw_affiliation_string | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[5].institutions[0].id | https://openalex.org/I100066346 |
| authorships[5].institutions[0].ror | https://ror.org/04vnq7t77 |
| authorships[5].institutions[0].type | education |
| authorships[5].institutions[0].lineage | https://openalex.org/I100066346 |
| authorships[5].institutions[0].country_code | DE |
| authorships[5].institutions[0].display_name | University of Stuttgart |
| authorships[5].author_position | middle |
| authorships[5].raw_author_name | R Roßbach |
| authorships[5].is_corresponding | False |
| authorships[5].raw_affiliation_strings | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[6].author.id | https://openalex.org/A5037530222 |
| authorships[6].author.orcid | https://orcid.org/0000-0002-1311-6550 |
| authorships[6].author.display_name | Michael Jetter |
| authorships[6].countries | DE |
| authorships[6].affiliations[0].institution_ids | https://openalex.org/I100066346 |
| authorships[6].affiliations[0].raw_affiliation_string | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[6].institutions[0].id | https://openalex.org/I100066346 |
| authorships[6].institutions[0].ror | https://ror.org/04vnq7t77 |
| authorships[6].institutions[0].type | education |
| authorships[6].institutions[0].lineage | https://openalex.org/I100066346 |
| authorships[6].institutions[0].country_code | DE |
| authorships[6].institutions[0].display_name | University of Stuttgart |
| authorships[6].author_position | middle |
| authorships[6].raw_author_name | M Jetter |
| authorships[6].is_corresponding | False |
| authorships[6].raw_affiliation_strings | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[7].author.id | https://openalex.org/A5063708231 |
| authorships[7].author.orcid | https://orcid.org/0000-0002-2949-2462 |
| authorships[7].author.display_name | Peter Michler |
| authorships[7].countries | DE |
| authorships[7].affiliations[0].institution_ids | https://openalex.org/I100066346 |
| authorships[7].affiliations[0].raw_affiliation_string | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| authorships[7].institutions[0].id | https://openalex.org/I100066346 |
| authorships[7].institutions[0].ror | https://ror.org/04vnq7t77 |
| authorships[7].institutions[0].type | education |
| authorships[7].institutions[0].lineage | https://openalex.org/I100066346 |
| authorships[7].institutions[0].country_code | DE |
| authorships[7].institutions[0].display_name | University of Stuttgart |
| authorships[7].author_position | last |
| authorships[7].raw_author_name | P Michler |
| authorships[7].is_corresponding | False |
| authorships[7].raw_affiliation_strings | Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany |
| has_content.pdf | True |
| has_content.grobid_xml | True |
| is_paratext | False |
| open_access.is_oa | True |
| open_access.oa_url | https://iopscience.iop.org/article/10.1088/1742-6596/245/1/012009/pdf |
| open_access.oa_status | diamond |
| open_access.any_repository_has_fulltext | False |
| created_date | 2025-10-10T00:00:00 |
| display_name | MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots |
| has_fulltext | False |
| is_retracted | False |
| updated_date | 2025-11-06T03:46:38.306776 |
| primary_topic.id | https://openalex.org/T10022 |
| primary_topic.field.id | https://openalex.org/fields/31 |
| primary_topic.field.display_name | Physics and Astronomy |
| primary_topic.score | 1.0 |
| primary_topic.domain.id | https://openalex.org/domains/3 |
| primary_topic.domain.display_name | Physical Sciences |
| primary_topic.subfield.id | https://openalex.org/subfields/3107 |
| primary_topic.subfield.display_name | Atomic and Molecular Physics, and Optics |
| primary_topic.display_name | Semiconductor Quantum Structures and Devices |
| related_works | https://openalex.org/W2136858202, https://openalex.org/W1624959212, https://openalex.org/W2000598193, https://openalex.org/W2162365537, https://openalex.org/W2342141076, https://openalex.org/W2613152915, https://openalex.org/W2367397796, https://openalex.org/W2032748569, https://openalex.org/W4207033241, https://openalex.org/W2966185305 |
| cited_by_count | 0 |
| locations_count | 1 |
| best_oa_location.id | doi:10.1088/1742-6596/245/1/012009 |
| best_oa_location.is_oa | True |
| best_oa_location.source.id | https://openalex.org/S4210187594 |
| best_oa_location.source.issn | 1742-6588, 1742-6596 |
| best_oa_location.source.type | journal |
| best_oa_location.source.is_oa | True |
| best_oa_location.source.issn_l | 1742-6588 |
| best_oa_location.source.is_core | True |
| best_oa_location.source.is_in_doaj | False |
| best_oa_location.source.display_name | Journal of Physics Conference Series |
| best_oa_location.source.host_organization | https://openalex.org/P4310320083 |
| best_oa_location.source.host_organization_name | IOP Publishing |
| best_oa_location.source.host_organization_lineage | https://openalex.org/P4310320083 |
| best_oa_location.license | |
| best_oa_location.pdf_url | https://iopscience.iop.org/article/10.1088/1742-6596/245/1/012009/pdf |
| best_oa_location.version | publishedVersion |
| best_oa_location.raw_type | journal-article |
| best_oa_location.license_id | |
| best_oa_location.is_accepted | True |
| best_oa_location.is_published | True |
| best_oa_location.raw_source_name | Journal of Physics: Conference Series |
| best_oa_location.landing_page_url | https://doi.org/10.1088/1742-6596/245/1/012009 |
| primary_location.id | doi:10.1088/1742-6596/245/1/012009 |
| primary_location.is_oa | True |
| primary_location.source.id | https://openalex.org/S4210187594 |
| primary_location.source.issn | 1742-6588, 1742-6596 |
| primary_location.source.type | journal |
| primary_location.source.is_oa | True |
| primary_location.source.issn_l | 1742-6588 |
| primary_location.source.is_core | True |
| primary_location.source.is_in_doaj | False |
| primary_location.source.display_name | Journal of Physics Conference Series |
| primary_location.source.host_organization | https://openalex.org/P4310320083 |
| primary_location.source.host_organization_name | IOP Publishing |
| primary_location.source.host_organization_lineage | https://openalex.org/P4310320083 |
| primary_location.license | |
| primary_location.pdf_url | https://iopscience.iop.org/article/10.1088/1742-6596/245/1/012009/pdf |
| primary_location.version | publishedVersion |
| primary_location.raw_type | journal-article |
| primary_location.license_id | |
| primary_location.is_accepted | True |
| primary_location.is_published | True |
| primary_location.raw_source_name | Journal of Physics: Conference Series |
| primary_location.landing_page_url | https://doi.org/10.1088/1742-6596/245/1/012009 |
| publication_date | 2010-09-01 |
| publication_year | 2010 |
| referenced_works | https://openalex.org/W168170985, https://openalex.org/W2163525631, https://openalex.org/W1637233379, https://openalex.org/W2141357728, https://openalex.org/W2062584998, https://openalex.org/W1974693120, https://openalex.org/W2048744857, https://openalex.org/W2098395774, https://openalex.org/W1993430084 |
| referenced_works_count | 9 |
| abstract_inverted_index.a | 2, 18, 90 |
| abstract_inverted_index.11 | 53 |
| abstract_inverted_index.25 | 60 |
| abstract_inverted_index.To | 0 |
| abstract_inverted_index.as | 17, 68 |
| abstract_inverted_index.by | 37 |
| abstract_inverted_index.in | 15 |
| abstract_inverted_index.of | 5, 31, 59, 77, 92 |
| abstract_inverted_index.to | 52 |
| abstract_inverted_index.we | 10 |
| abstract_inverted_index.140 | 93 |
| abstract_inverted_index.InP | 73, 83 |
| abstract_inverted_index.and | 28, 55 |
| abstract_inverted_index.dot | 26, 75, 85 |
| abstract_inverted_index.has | 95 |
| abstract_inverted_index.low | 3 |
| abstract_inverted_index.the | 22, 29, 32, 72 |
| abstract_inverted_index.was | 35 |
| abstract_inverted_index.GaAs | 16 |
| abstract_inverted_index.been | 96 |
| abstract_inverted_index.dots | 9, 67, 81 |
| abstract_inverted_index.down | 51 |
| abstract_inverted_index.fine | 56 |
| abstract_inverted_index.seed | 19, 69 |
| abstract_inverted_index.used | 11 |
| abstract_inverted_index.with | 49, 89 |
| abstract_inverted_index.μeV | 54, 94 |
| abstract_inverted_index.force | 39 |
| abstract_inverted_index.layer | 70 |
| abstract_inverted_index.these | 64 |
| abstract_inverted_index.using | 63 |
| abstract_inverted_index.μeV. | 61 |
| abstract_inverted_index.First, | 21 |
| abstract_inverted_index.InGaAs | 12, 24, 65 |
| abstract_inverted_index.active | 7, 79 |
| abstract_inverted_index.atomic | 38 |
| abstract_inverted_index.layer. | 20 |
| abstract_inverted_index.lines, | 48 |
| abstract_inverted_index.narrow | 46 |
| abstract_inverted_index.reveal | 45 |
| abstract_inverted_index.achieve | 1 |
| abstract_inverted_index.density | 76 |
| abstract_inverted_index.islands | 13 |
| abstract_inverted_index.quantum | 25, 66, 74, 80, 84 |
| abstract_inverted_index.reduces | 71 |
| abstract_inverted_index.spectra | 44 |
| abstract_inverted_index.densitiy | 4 |
| abstract_inverted_index.embedded | 14 |
| abstract_inverted_index.emission | 88 |
| abstract_inverted_index.annealing | 33 |
| abstract_inverted_index.excitonic | 86 |
| abstract_inverted_index.influence | 30 |
| abstract_inverted_index.linewidth | 91 |
| abstract_inverted_index.observed. | 97 |
| abstract_inverted_index.optically | 6, 78 |
| abstract_inverted_index.structure | 57 |
| abstract_inverted_index.technique | 34 |
| abstract_inverted_index.linewidths | 50 |
| abstract_inverted_index.microscope | 40 |
| abstract_inverted_index.properties | 27 |
| abstract_inverted_index.splittings | 58 |
| abstract_inverted_index.structural | 23 |
| abstract_inverted_index.InP-quantum | 8 |
| abstract_inverted_index.Furthermore, | 62 |
| abstract_inverted_index.drastically. | 82 |
| abstract_inverted_index.investigated | 36 |
| abstract_inverted_index.measurements. | 41 |
| abstract_inverted_index.High-resolution | 42 |
| abstract_inverted_index.photoluminescence | 47, 87 |
| abstract_inverted_index.micro-photoluminescence | 43 |
| cited_by_percentile_year | |
| countries_distinct_count | 1 |
| institutions_distinct_count | 8 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/14 |
| sustainable_development_goals[0].score | 0.699999988079071 |
| sustainable_development_goals[0].display_name | Life below water |
| citation_normalized_percentile.value | 0.09670447 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |