Nb-doped Ga 2 O 3 as charge-trapping layer for nonvolatile memory applications Article Swipe

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R. P. Shi , Xiaodong Huang , J.K.O. Sin , P. T. Lai ·

YOU? · · 2016 · Open Access · · DOI: https://doi.org/10.1016/j.microrel.2016.07.148

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Trapping Doping Materials science Optoelectronics Capacitor Saturation (graph theory) Charge (physics) Non-volatile memory Analytical Chemistry (journal) Trap (plumbing) Voltage Electrical engineering Chemistry Physics Quantum mechanics Engineering Mathematics Biology Chromatography Meteorology Ecology Combinatorics

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Type: article
Language: en
Landing Page: https://doi.org/10.1016/j.microrel.2016.07.148
OA Status: green
Cited By: 8
References: 30
Related Works: 10
OpenAlex ID: https://openalex.org/W2489040527

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OpenAlex ID: https://openalex.org/W2489040527

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DOI: https://doi.org/10.1016/j.microrel.2016.07.148

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Title: Nb-doped Ga 2 O 3 as charge-trapping layer for nonvolatile memory applications

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Type: article

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Language: en

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Publication year: 2016

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Publication date: 2016-07-28

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Authors: R. P. Shi, Xiaodong Huang, J.K.O. Sin, P. T. Lai

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Landing page: https://doi.org/10.1016/j.microrel.2016.07.148

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OA URL: https://hdl.handle.net/10722/248408

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Concepts: Trapping, Doping, Materials science, Optoelectronics, Capacitor, Saturation (graph theory), Charge (physics), Non-volatile memory, Analytical Chemistry (journal), Trap (plumbing), Voltage, Electrical engineering, Chemistry, Physics, Quantum mechanics, Engineering, Mathematics, Biology, Chromatography, Meteorology, Ecology, Combinatorics

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Cited by: 8

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Citations by year (recent): 2023: 1, 2022: 1, 2019: 2, 2018: 2, 2017: 1

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References (count): 30

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Related works (count): 10

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publication_date	2016-07-28
publication_year	2016
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referenced_works_count	30
abstract_inverted_index
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corresponding_institution_ids	https://openalex.org/I200769079, https://openalex.org/I889458895
sustainable_development_goals[0].id	https://metadata.un.org/sdg/7
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sustainable_development_goals[0].display_name	Affordable and clean energy
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