Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors Article Swipe
Dennis Braun
,
Sebastian Lukas
,
Lukas Völkel
,
Oliver Hartwig
,
Maximilian Prechtl
,
Melkamu Belete
,
Satender Kataria
,
T. Wahlbrink
,
Alwin Daus
,
Georg S. Duesberg
,
Max C. Lemme
·
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1109/drc55272.2022.9855787
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1109/drc55272.2022.9855787
<p>Two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) have gained attention for neuromorphic computing applications due to their resistive switching (RS) behavior [1], [2]. Among TMDCs, platinum diselenide (PtSe<sub>2</sub>) stands out because it can be grown at complementary metal-oxide-semiconductor (CMOS) back-end-of-line (BEOL) compatible temperatures [3], [4] and it has shown excellent long-term stability [5]. However, its potential for RS remains largely unexplored with only preliminary proof-of-concept characteristics presented in a multilayer PtSe<sub>2</sub> device with Au electrodes [6]. Here, we present the first detailed study on forming free RS in PtSe<sub>2</sub> -based crosspoint (CP) memristors using CMOS-compatible electrodes. We find remarkably low switching fields (0.08 V /nm) likely related to our choice of electrode materials and excellent retention for at least several days.</p>
Related Topics
Concepts
Neuromorphic engineering
Resistive random-access memory
CMOS
Electrode
Memristor
Resistive touchscreen
Materials science
Diselenide
Optoelectronics
Electrical engineering
Nanotechnology
Computer science
Chemistry
Engineering
Artificial intelligence
Physical chemistry
Selenium
Metallurgy
Artificial neural network
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1109/drc55272.2022.9855787
- OA Status
- green
- Cited By
- 2
- References
- 5
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4292388319
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4292388319Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1109/drc55272.2022.9855787Digital Object Identifier
- Title
-
Non-Volatile Resistive Switching in PtSe2-Based Crosspoint MemristorsWork title
- Type
-
articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2022Year of publication
- Publication date
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2022-06-26Full publication date if available
- Authors
-
Dennis Braun, Sebastian Lukas, Lukas Völkel, Oliver Hartwig, Maximilian Prechtl, Melkamu Belete, Satender Kataria, T. Wahlbrink, Alwin Daus, Georg S. Duesberg, Max C. LemmeList of authors in order
- Landing page
-
https://doi.org/10.1109/drc55272.2022.9855787Publisher landing page
- Open access
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YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
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https://doi.org/10.1109/DRC55272.2022.9855787Direct OA link when available
- Concepts
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Neuromorphic engineering, Resistive random-access memory, CMOS, Electrode, Memristor, Resistive touchscreen, Materials science, Diselenide, Optoelectronics, Electrical engineering, Nanotechnology, Computer science, Chemistry, Engineering, Artificial intelligence, Physical chemistry, Selenium, Metallurgy, Artificial neural networkTop concepts (fields/topics) attached by OpenAlex
- Cited by
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2Total citation count in OpenAlex
- Citations by year (recent)
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2024: 1, 2023: 1Per-year citation counts (last 5 years)
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5Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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