Abstract Magnetic tunnel junctions are nanoscale devices that have recently attracted interest in the context of frequency multiplexed spintronic neural networks, due to their interesting dynamical properties, which are defined during the fabrication process, and depend on the material parameters and geometry. This work proposes an approach to extending the functionality of a standard magnetic tunnel junction (MTJ) by introducing an additional ferromagnet/antiferromagnet (FM/AFM) storage layer (SL) vertically inte…