Optimization of the Forming Process and Regulation of the Conductive Filament for HfO2 -based RRAM devices with Nb2O5 TEL insertion layers Article Swipe
Fei Yang
,
Yixiang Cheng
,
Qinke Shu
,
Hehua Zhu
,
Junlong Liu
,
Yujie Xie
,
Xinming Zhao
·
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.21203/rs.3.rs-7209958/v1
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.21203/rs.3.rs-7209958/v1
Advancements in science and technology have enabled increasingly widespread applications of resistive random access memory (RRAM) in non-volatile memory. In this study, based on the oxygen vacancy conduction mechanism, an electro-thermal coupling model of Pt/Nb2O5/HfO2/HfOx/Ti has been established. By solving the partial differential equations of the coefficients, the processes of RRAM forming, set and reset were simulated, and the distributions of temperature, electric field, and oxygen vacancy concentration in the dielectric layers were obtained. Through comparison with Pt/HfO2/HfOx/Ti, the introduction of the Nb2O5 layer as a thermal enhancement layer (TEL) result in significant improvement of the switching performance, with the switching voltage, power consumption being reduced and device stability being increased. Furthermore, by modulating the thickness of Nb2O5 insertion layer, the rupture position of conductive filament (CF) during reset process can be precisely controlled, which provide a guideline for the design and optimization of HfO2-based RRAM.
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- preprint
- Language
- en
- Landing Page
- https://doi.org/10.21203/rs.3.rs-7209958/v1
- https://www.researchsquare.com/article/rs-7209958/latest.pdf
- OA Status
- gold
- References
- 11
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- 10
- OpenAlex ID
- https://openalex.org/W4414127953
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https://openalex.org/W4414127953Canonical identifier for this work in OpenAlex
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https://doi.org/10.21203/rs.3.rs-7209958/v1Digital Object Identifier
- Title
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Optimization of the Forming Process and Regulation of the Conductive Filament for HfO2 -based RRAM devices with Nb2O5 TEL insertion layersWork title
- Type
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preprintOpenAlex work type
- Language
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enPrimary language
- Publication year
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2025Year of publication
- Publication date
-
2025-09-11Full publication date if available
- Authors
-
Fei Yang, Yixiang Cheng, Qinke Shu, Hehua Zhu, Junlong Liu, Yujie Xie, Xinming ZhaoList of authors in order
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https://doi.org/10.21203/rs.3.rs-7209958/v1Publisher landing page
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https://www.researchsquare.com/article/rs-7209958/latest.pdfDirect link to full text PDF
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goldOpen access status per OpenAlex
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https://www.researchsquare.com/article/rs-7209958/latest.pdfDirect OA link when available
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0Total citation count in OpenAlex
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10Other works algorithmically related by OpenAlex
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