p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications Article Swipe
Chowdam Venkata Prasad
,
Jang Hyeok Park
,
Qui Thanh Hoai Ta
,
Kyong Jae Kim
,
Ho Jung Jeon
,
Mahdi Mir
,
Mohsin Raza
,
Nguyen Ngoc Tri
,
Honggyun Kim
,
Madani Labed
,
You Seung Rim
·
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1016/j.mtadv.2025.100577
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1016/j.mtadv.2025.100577
This study integrates a p-type copper gallium oxide (p-CuGaO2) interlayer to enhance the performance of β-Ga2O3-based power devices, addressing challenges in achieving reliable p-type doping. The p-CuGaO2 interlayer is expected to improve breakdown voltage (BV) and reduce leakage current, increasing device efficiency and reliability under high-temperature conditions. The heterojunction (HJ) system of β-Ga2O3 and p-CuGaO2 is investigated using density functional theory (DFT) via the Vienna Ab initio Simulation Package (VASP) and experimental methods, focusing on the β-Ga2O3 (001)/p-CuGaO2 (006) interface. Binding energy, electron localization, charge density difference, and electrostatic potential drop are analyzed, identifying Configuration-1 as the optimal configuration due to its high binding energy and favorable structural properties. Annealing temperature impacts the microstructure, stoichiometry, optical, electrical, and transport properties of p-CuGaO2/β-Ga2O3 HJs. Electrical measurements reveal reduced turn-on voltage (Von), on-resistance (Ron), and leakage currents, with the highest BV of 1.62 kV achieved at 800 °C compared to Pt/β-Ga2O3 Schottky barrier diode (SBD). The interface state density (NSS) is evaluated using the high-low frequency approach. Silvaco TCAD simulations explore breakdown mechanisms, demonstrating the potential of p-CuGaO2 for β-Ga2O3 HJ power devices. These findings support the development and manufacture of robust β-Ga2O3 HJ power devices.
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Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1016/j.mtadv.2025.100577
- OA Status
- gold
- Cited By
- 4
- References
- 110
- Related Works
- 10
- OpenAlex ID
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All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4408773283Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1016/j.mtadv.2025.100577Digital Object Identifier
- Title
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p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applicationsWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2025Year of publication
- Publication date
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2025-03-24Full publication date if available
- Authors
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Chowdam Venkata Prasad, Jang Hyeok Park, Qui Thanh Hoai Ta, Kyong Jae Kim, Ho Jung Jeon, Mahdi Mir, Mohsin Raza, Nguyen Ngoc Tri, Honggyun Kim, Madani Labed, You Seung RimList of authors in order
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https://doi.org/10.1016/j.mtadv.2025.100577Publisher landing page
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YesWhether a free full text is available
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goldOpen access status per OpenAlex
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https://doi.org/10.1016/j.mtadv.2025.100577Direct OA link when available
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Throughput, Interface (matter), Computer science, Power (physics), Materials science, Operating system, Physics, Maximum bubble pressure method, Quantum mechanics, Wireless, BubbleTop concepts (fields/topics) attached by OpenAlex
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4Total citation count in OpenAlex
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2025: 4Per-year citation counts (last 5 years)
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10Other works algorithmically related by OpenAlex
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| referenced_works | https://openalex.org/W2783668429, https://openalex.org/W2891624372, https://openalex.org/W3126641858, https://openalex.org/W3042514039, https://openalex.org/W3145062055, https://openalex.org/W6855703360, https://openalex.org/W3215602170, https://openalex.org/W4394679553, https://openalex.org/W4395117489, https://openalex.org/W4398786190, https://openalex.org/W4376622366, https://openalex.org/W4376869949, https://openalex.org/W4385828900, https://openalex.org/W3164414943, https://openalex.org/W4392761908, https://openalex.org/W4315926794, https://openalex.org/W4387362441, https://openalex.org/W6855511350, https://openalex.org/W4285011169, https://openalex.org/W6847200973, https://openalex.org/W3000408756, https://openalex.org/W4220832215, https://openalex.org/W4390692092, https://openalex.org/W3135295779, https://openalex.org/W1970050599, https://openalex.org/W1996514500, https://openalex.org/W1542630147, https://openalex.org/W6786536693, https://openalex.org/W6854483623, https://openalex.org/W2083222334, https://openalex.org/W2087698390, https://openalex.org/W2007395042, https://openalex.org/W3194537919, https://openalex.org/W2044591029, https://openalex.org/W2329696425, https://openalex.org/W2292138146, https://openalex.org/W2746310651, https://openalex.org/W3193497120, https://openalex.org/W4282838727, https://openalex.org/W4362640070, https://openalex.org/W2914071815, https://openalex.org/W2037514990, https://openalex.org/W2618310617, https://openalex.org/W4392139967, https://openalex.org/W2484706652, https://openalex.org/W1998358092, https://openalex.org/W2947988300, https://openalex.org/W4383483302, https://openalex.org/W2031919799, https://openalex.org/W1714536748, https://openalex.org/W2318393303, https://openalex.org/W2997850643, https://openalex.org/W2147859473, https://openalex.org/W4393191713, https://openalex.org/W2164615423, https://openalex.org/W2021640734, https://openalex.org/W4393194678, https://openalex.org/W4387701707, https://openalex.org/W4400238680, https://openalex.org/W4389194879, https://openalex.org/W4393261190, https://openalex.org/W2750902338, https://openalex.org/W3041407062, https://openalex.org/W4392859964, https://openalex.org/W4391002683, https://openalex.org/W2769907424, https://openalex.org/W4212963601, https://openalex.org/W4388962400, https://openalex.org/W2004931833, https://openalex.org/W2558955513, https://openalex.org/W2463047250, https://openalex.org/W2462693816, https://openalex.org/W2552079755, https://openalex.org/W1584682506, https://openalex.org/W2313594505, https://openalex.org/W2328170552, https://openalex.org/W6790766730, https://openalex.org/W2038981389, https://openalex.org/W2133226443, https://openalex.org/W2079851248, https://openalex.org/W4393391707, https://openalex.org/W4396828225, https://openalex.org/W2031422010, https://openalex.org/W6858383939, https://openalex.org/W4324134082, https://openalex.org/W3036516792, https://openalex.org/W2004967694, https://openalex.org/W3035100758, https://openalex.org/W4320012199, https://openalex.org/W2566093737, https://openalex.org/W4392597156, https://openalex.org/W4377099606, https://openalex.org/W4308219690, https://openalex.org/W4380883083, https://openalex.org/W4388692032, https://openalex.org/W4383552033, https://openalex.org/W4390661035, https://openalex.org/W2021890279, https://openalex.org/W2079855603, https://openalex.org/W2079471989, https://openalex.org/W2128922073, https://openalex.org/W2988766683, https://openalex.org/W2888809310, https://openalex.org/W6638555306, https://openalex.org/W3047367955, https://openalex.org/W3111580697, https://openalex.org/W3175557294, https://openalex.org/W4385345981, https://openalex.org/W1827944150, https://openalex.org/W3130750153 |
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