Materials Today Advances • Vol 26
p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications
March 2025 • Chowdam Venkata Prasad, Jang Hyeok Park, Qui Thanh Hoai Ta, Kyong Jae Kim, Ho Jung Jeon, Mahdi Mir, Mohsin Raza, Nguyen Ngoc Tri, Honggyun Kim, Madan…
This study integrates a p-type copper gallium oxide (p-CuGaO2) interlayer to enhance the performance of β-Ga2O3-based power devices, addressing challenges in achieving reliable p-type doping. The p-CuGaO2 interlayer is expected to improve breakdown voltage (BV) and reduce leakage current, increasing device efficiency and reliability under high-temperature conditions. The heterojunction (HJ) system of β-Ga2O3 and p-CuGaO2 is investigated using density functional theory (DFT) via the Vienna Ab initio Simulation Pack…