Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes Article Swipe
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· 2015
· Open Access
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· DOI: https://doi.org/10.1109/tns.2015.2480071
· OA: W2324941400
Electrical performance and defect characterization of vertical GaN <i>P-i-N</i> diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 10<sup>13</sup> cm<sup>-2</sup>. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN <i>P-i-Ns</i> remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.
