Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model Article Swipe
Qingzhi Wu
,
Yuehang Xu
,
Jianjun Zhou
,
Yuechan Kong
,
Tangsheng Chen
,
Yan Wang
,
Fujiang Lin
,
Yu Fu
,
Yonghao Jia
,
Xiaodong Zhao
,
Bo Yan
,
Ruimin Xu
·
YOU?
·
· 2017
· Open Access
·
· DOI: https://doi.org/10.1149/2.0441712jss
YOU?
·
· 2017
· Open Access
·
· DOI: https://doi.org/10.1149/2.0441712jss
In this paper, the performance difference of AlGaN/GaN high-electron mobility transistors (HEMTs) with same epitaxial structure fabricated silicon carbide (SiC) and transferred to diamond substrate is examined based on the surface-potential (SP) model. The thermal resistances of these devices are extracted through finite element method (FEM) thermal analysis. Results show that GaN-on-diamond device has a lower thermal resistance than conventional GaN-on-SiC device, which demonstrates the thermal performance improvement of GaN-on-Diamond technology. By embedding thermal characteristic into carrier mobility in the conventional SP model, the effectiveness of model is validated through good agreement between simulation and measurements of DC and RF performance. Additionally, large-signal performance (output power Pout, power added efficiency PAE and Gain) on these two similar devices are compared under identical bias and temperature conditions based on the improved SP model, making this work be effective for improving the process of GaN-on-Diamond HEMTs.
Related Topics
Concepts
Materials science
Diamond
Silicon carbide
Optoelectronics
Substrate (aquarium)
High-electron-mobility transistor
Transistor
Wafer
Epitaxy
Thermal
Thermal resistance
Finite element method
Composite material
Electrical engineering
Layer (electronics)
Meteorology
Voltage
Physics
Geology
Thermodynamics
Engineering
Oceanography
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1149/2.0441712jss
- OA Status
- hybrid
- Cited By
- 33
- References
- 29
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2779967340
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W2779967340Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1149/2.0441712jssDigital Object Identifier
- Title
-
Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential ModelWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2017Year of publication
- Publication date
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2017-01-01Full publication date if available
- Authors
-
Qingzhi Wu, Yuehang Xu, Jianjun Zhou, Yuechan Kong, Tangsheng Chen, Yan Wang, Fujiang Lin, Yu Fu, Yonghao Jia, Xiaodong Zhao, Bo Yan, Ruimin XuList of authors in order
- Landing page
-
https://doi.org/10.1149/2.0441712jssPublisher landing page
- Open access
-
YesWhether a free full text is available
- OA status
-
hybridOpen access status per OpenAlex
- OA URL
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https://doi.org/10.1149/2.0441712jssDirect OA link when available
- Concepts
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Materials science, Diamond, Silicon carbide, Optoelectronics, Substrate (aquarium), High-electron-mobility transistor, Transistor, Wafer, Epitaxy, Thermal, Thermal resistance, Finite element method, Composite material, Electrical engineering, Layer (electronics), Meteorology, Voltage, Physics, Geology, Thermodynamics, Engineering, OceanographyTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
33Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 4, 2024: 4, 2023: 5, 2022: 2, 2021: 6Per-year citation counts (last 5 years)
- References (count)
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29Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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