Pressure‐Induced Metallization and Isostructural Transitions in 3R‐MoS2 Article Swipe
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1002/advs.202505031
At ambient conditions 3R‐polytypes of transition metal dichalcogenides (TMDs) demonstrate fascinating properties because of their unique layer stacking. Understanding the structure‐property relationship is essential for the realization of their use in spintronic, valleytronic, and optoelectronic applications. Herein, after the high pressure‐temperature synthesis of 3R‐MoS 2 in a large volume cubic press, a concomitant experimental and theoretical high‐pressure study of 3R‐MoS 2 is reported, leading to the discovery of pressure‐induced reversible isostructural phase transitions without symmetry breaking. Concurrent with the isostructural transitions, a semiconductor‐to‐metal transition is observed, owing to strong interlayer interaction and charge redistribution across the van der Waals gap under pressure. The pressure‐induced enhancement of interlayer interactions together with the robust intrinsic layer stacking in 3R‐MoS 2 prevent the layers from sliding under pressure and hinder a corresponding volume collapse. This study on continuous pressure‐tuning of crystal and electronic structure in 3R‐MoS 2 will play a vital role in developing the next‐generation devices involving coupling of structural, optical, and electrical properties of 3R‐polytypes of TMDs and other layered materials.
Related Topics
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1002/advs.202505031
- https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/advs.202505031
- OA Status
- gold
- Cited By
- 1
- References
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- Related Works
- 10
- OpenAlex ID
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Raw OpenAlex JSON
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https://openalex.org/W4411709835Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1002/advs.202505031Digital Object Identifier
- Title
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Pressure‐Induced Metallization and Isostructural Transitions in 3R‐MoS2Work title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2025Year of publication
- Publication date
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2025-06-27Full publication date if available
- Authors
-
Azkar Saeed Ahmad, Mangladeep Bhullar, Kenny Ståhl, Wenting Lu, Taiyi Chen, Lei Feng, Xin Hu, Qian Zhang, Konstantin Glazyrin, Martin Kunz, Yusheng Zhao, Shanmin Wang, Yansun Yao, Elissaios StavrouList of authors in order
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https://doi.org/10.1002/advs.202505031Publisher landing page
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https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/advs.202505031Direct link to full text PDF
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YesWhether a free full text is available
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goldOpen access status per OpenAlex
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https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/advs.202505031Direct OA link when available
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Isostructural, Materials science, Chemical engineering, Crystallography, Chemistry, Crystal structure, EngineeringTop concepts (fields/topics) attached by OpenAlex
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1Total citation count in OpenAlex
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2025: 1Per-year citation counts (last 5 years)
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10Other works algorithmically related by OpenAlex
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