Progress and critical challenges in slicing of thin semiconductor wafers using ultra-fine diamond wire Article Swipe
Ge PeiQi
,
Cao, Zhecan
,
Li Zongqiang
,
Wang Pei-zhi
,
Bi Wenbo
,
Ge, Mengran
,
Xie Wenkun
,
Xing Xu
·
YOU?
·
· 2026
· Open Access
·
· DOI: https://doi.org/10.17868/strath.00094630
YOU?
·
· 2026
· Open Access
·
· DOI: https://doi.org/10.17868/strath.00094630
Diamond wire sawing (DWS) has emerged as the dominant wafer slicing technology owing to its superior surface quality, reduced kerf loss, and high processing efficiency. To further reduce costs, the industry is pursuing thinner wafers (<150 μm for photovoltaic silicon) and adopting finer diamond wires (<35 μm in diameter) to maximize yield per ingot. However, slicing of such thin wafers with ultra-fine diamond wires poses significant technical barriers to widespread adoption. This paper presents a systematic review of progress in wafer thinning and wire diameter reduction for slicing, with emphasis placed particularly on critical challenges for industrial implementation. The main challenges can be summarized as follows: thin wafers exhibit an elevated breakage rate owing to the intrinsic brittleness of silicon in combination with increasing wafer dimensions; saw marks with depths on the order of several micrometers can substantially deteriorate device performance and impose additional complexity on subsequent surface treatment processes; wafer warp becomes increasingly pronounced as thickness decreases, resulting in handling difficulties and yield losses during wafer fabrication; and the use of ultra-fine wires (<35 μm) accelerates wire wear and breakage, thereby increasing wire-related costs and potentially degrading the quality of the sliced wafers. The review begins by examining the fundamental principles of DWS, covering both cutting mechanisms and wire characteristics. It then analyzes the underlying causes of these key challenges and their potential impacts on slicing performance. Finally, the paper outlines potential solutions and future research directions for advancing thin-wafer slicing technology with ultra-fine diamond wires.
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- Type
- article
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- https://doi.org/10.17868/strath.00094630
- OA Status
- green
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- https://openalex.org/W7104044293
All OpenAlex metadata
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https://openalex.org/W7104044293Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.17868/strath.00094630Digital Object Identifier
- Title
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Progress and critical challenges in slicing of thin semiconductor wafers using ultra-fine diamond wireWork title
- Type
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articleOpenAlex work type
- Publication year
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2026Year of publication
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2026-01-01Full publication date if available
- Authors
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Ge PeiQi, Cao, Zhecan, Li Zongqiang, Wang Pei-zhi, Bi Wenbo, Ge, Mengran, Xie Wenkun, Xing XuList of authors in order
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https://doi.org/10.17868/strath.00094630Publisher landing page
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YesWhether a free full text is available
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greenOpen access status per OpenAlex
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https://doi.org/10.17868/strath.00094630Direct OA link when available
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Slicing, Wafer, Diamond, Materials science, Brittleness, Yield (engineering), Engineering physics, Silicon, Wafer backgrinding, Nanotechnology, Quality (philosophy), Mechanical engineering, Semiconductor, Electrical conductor, Semiconductor device fabrication, Wafer testingTop concepts (fields/topics) attached by OpenAlex
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0Total citation count in OpenAlex
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| abstract_inverted_index.complexity | 144 |
| abstract_inverted_index.decreases, | 157 |
| abstract_inverted_index.directions | 237 |
| abstract_inverted_index.increasing | 123, 182 |
| abstract_inverted_index.industrial | 96 |
| abstract_inverted_index.mechanisms | 207 |
| abstract_inverted_index.principles | 201 |
| abstract_inverted_index.processes; | 149 |
| abstract_inverted_index.processing | 23 |
| abstract_inverted_index.pronounced | 154 |
| abstract_inverted_index.subsequent | 146 |
| abstract_inverted_index.summarized | 103 |
| abstract_inverted_index.systematic | 75 |
| abstract_inverted_index.technology | 11, 242 |
| abstract_inverted_index.thin-wafer | 240 |
| abstract_inverted_index.ultra-fine | 61, 172, 244 |
| abstract_inverted_index.underlying | 215 |
| abstract_inverted_index.widespread | 69 |
| abstract_inverted_index.accelerates | 176 |
| abstract_inverted_index.brittleness | 117 |
| abstract_inverted_index.combination | 121 |
| abstract_inverted_index.deteriorate | 138 |
| abstract_inverted_index.dimensions; | 125 |
| abstract_inverted_index.efficiency. | 24 |
| abstract_inverted_index.fundamental | 200 |
| abstract_inverted_index.micrometers | 135 |
| abstract_inverted_index.performance | 140 |
| abstract_inverted_index.potentially | 186 |
| abstract_inverted_index.significant | 65 |
| abstract_inverted_index.difficulties | 161 |
| abstract_inverted_index.fabrication; | 167 |
| abstract_inverted_index.increasingly | 153 |
| abstract_inverted_index.particularly | 91 |
| abstract_inverted_index.performance. | 227 |
| abstract_inverted_index.photovoltaic | 38 |
| abstract_inverted_index.wire-related | 183 |
| abstract_inverted_index.substantially | 137 |
| abstract_inverted_index.implementation. | 97 |
| abstract_inverted_index.characteristics. | 210 |
| cited_by_percentile_year | |
| countries_distinct_count | 0 |
| institutions_distinct_count | 8 |
| citation_normalized_percentile.value | 0.91666667 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |