Proton irradiation on Hydrogenated Amorphous Silicon flexible devices Article Swipe
YOU?
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· 2024
· Open Access
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· DOI: https://doi.org/10.48550/arxiv.2412.13124
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.
Related Topics
- Type
- preprint
- Language
- en
- Landing Page
- http://arxiv.org/abs/2412.13124
- https://arxiv.org/pdf/2412.13124
- OA Status
- green
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4405562734
Raw OpenAlex JSON
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https://openalex.org/W4405562734Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.48550/arxiv.2412.13124Digital Object Identifier
- Title
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Proton irradiation on Hydrogenated Amorphous Silicon flexible devicesWork title
- Type
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preprintOpenAlex work type
- Language
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enPrimary language
- Publication year
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2024Year of publication
- Publication date
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2024-12-17Full publication date if available
- Authors
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M. Menichelli, Saba Aziz, Aishah Bashiri, M. Bizzarri, C. Buti, Lucio Calcagnile, D. Calvo, M. Caprai, D. Caputo, A. P. Caricato, Roberto Catalano, M. Cazzanelli, R. Cirio, G.A.P. Cirrone, Federico Cittadini, T. Croci, G. Cuttone, G. de Cesare, P. De Remigis, S. Dunand, Michele Fabi, L. Frontini, C. Grimani, Mariacristina Guarrera, Hamza Hasnaoui, M. Ionica, K. Kanxheri, Matthew Large, F. Lenta, Valentino Liberali, Nicola Lovecchio, M. Martino, G. Maruccio, Lucio Maruccio, G. Mazza, Anna Grazia Monteduro, A. Morozzi, A. Nascetti, S. Pallotta, A. Papi, D. Passeri, M. Pedio, Marco Petasecca, Giada Petringa, F. Peverini, P. Placidi, Matteo Polo, A. Quaranta, Gianluca Quarta, Silvia Rizzato, Federico Sabbatini, L. Servoli, A. Stabile, C. Talamonti, Jonathan Thomet, M. Mora, Mattia Villani, R. J. Wheadon, N. Wyrsch, N. Zema, Luca TostiList of authors in order
- Landing page
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https://arxiv.org/abs/2412.13124Publisher landing page
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https://arxiv.org/pdf/2412.13124Direct link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
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greenOpen access status per OpenAlex
- OA URL
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https://arxiv.org/pdf/2412.13124Direct OA link when available
- Concepts
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Amorphous silicon, Irradiation, Proton, Materials science, Silicon, Amorphous solid, Optoelectronics, Chemistry, Crystalline silicon, Physics, Crystallography, Nuclear physicsTop concepts (fields/topics) attached by OpenAlex
- Cited by
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0Total citation count in OpenAlex
- Related works (count)
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10Other works algorithmically related by OpenAlex
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