Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes Article Swipe
Lingyu Wan
,
Dishu Zhao
,
Fangze Wang
,
Gu Xu
,
Tao Lin
,
Chin‐Che Tin
,
Zhaochi Feng
,
Zhe Chuan Feng
·
YOU?
·
· 2017
· Open Access
·
· DOI: https://doi.org/10.1364/ome.8.000119
YOU?
·
· 2017
· Open Access
·
· DOI: https://doi.org/10.1364/ome.8.000119
The crystal quality of a 4H-silicon carbide (4H-SiC) epitaxial layer is crucial to the development of high-performance 4H-SiC-based electronic power devices. However, the quality assessment of 4H-SiC homoepitaxial thin film is problematic because the same bulk material interferes with the probe of the epilayer. In this paper, we propose a simple and straightforward strategy to assess the quality of a homoepilayer using ultraviolet (UV) Raman spectroscopy (RS). Rather than focusing on the normally allowed modes, we shift our attention to the forbidden modes instead. We demonstrate that forbidden modes, which were usually ignored, are more sensitive to the crystalline imperfection and can be an effective quality probe. Our approach analyzes the crystal quality swiftly, without the need for the data fitting involved in the conventional method, and therefore makes the quality assessment much more efficient. The new method may also be applied to the other thin film materials. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Related Topics
Concepts
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1364/ome.8.000119
- OA Status
- gold
- Cited By
- 13
- References
- 24
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2776383164
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W2776383164Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1364/ome.8.000119Digital Object Identifier
- Title
-
Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modesWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2017Year of publication
- Publication date
-
2017-12-21Full publication date if available
- Authors
-
Lingyu Wan, Dishu Zhao, Fangze Wang, Gu Xu, Tao Lin, Chin‐Che Tin, Zhaochi Feng, Zhe Chuan FengList of authors in order
- Landing page
-
https://doi.org/10.1364/ome.8.000119Publisher landing page
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
-
https://doi.org/10.1364/ome.8.000119Direct OA link when available
- Concepts
-
Silicon carbide, Materials science, Raman spectroscopy, Quality (philosophy), Crystal (programming language), Optoelectronics, Thin film, Epitaxy, Raman scattering, Ultraviolet, Silicon, Optics, Layer (electronics), Computer science, Nanotechnology, Physics, Quantum mechanics, Metallurgy, Programming languageTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
13Total citation count in OpenAlex
- Citations by year (recent)
-
2024: 1, 2023: 2, 2022: 5, 2021: 2, 2020: 1Per-year citation counts (last 5 years)
- References (count)
-
24Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
Full payload
| id | https://openalex.org/W2776383164 |
|---|---|
| doi | https://doi.org/10.1364/ome.8.000119 |
| ids.doi | https://doi.org/10.1364/ome.8.000119 |
| ids.mag | 2776383164 |
| ids.openalex | https://openalex.org/W2776383164 |
| fwci | 0.39641671 |
| type | article |
| title | Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes |
| awards[0].id | https://openalex.org/G3004785515 |
| awards[0].funder_id | https://openalex.org/F4320321001 |
| awards[0].display_name | |
| awards[0].funder_award_id | U1731239 |
| awards[0].funder_display_name | National Natural Science Foundation of China |
| awards[1].id | https://openalex.org/G6392884371 |
| awards[1].funder_id | https://openalex.org/F4320321001 |
| awards[1].display_name | |
| awards[1].funder_award_id | 61367004 |
| awards[1].funder_display_name | National Natural Science Foundation of China |
| biblio.issue | 1 |
| biblio.volume | 8 |
| biblio.last_page | 119 |
| biblio.first_page | 119 |
| grants[0].funder | https://openalex.org/F4320321001 |
| grants[0].award_id | 61367004 |
| grants[0].funder_display_name | National Natural Science Foundation of China |
| grants[1].funder | https://openalex.org/F4320321001 |
| grants[1].award_id | U1731239 |
| grants[1].funder_display_name | National Natural Science Foundation of China |
| topics[0].id | https://openalex.org/T10361 |
| topics[0].field.id | https://openalex.org/fields/22 |
| topics[0].field.display_name | Engineering |
| topics[0].score | 1.0 |
| topics[0].domain.id | https://openalex.org/domains/3 |
| topics[0].domain.display_name | Physical Sciences |
| topics[0].subfield.id | https://openalex.org/subfields/2208 |
| topics[0].subfield.display_name | Electrical and Electronic Engineering |
| topics[0].display_name | Silicon Carbide Semiconductor Technologies |
| topics[1].id | https://openalex.org/T10623 |
| topics[1].field.id | https://openalex.org/fields/22 |
| topics[1].field.display_name | Engineering |
| topics[1].score | 0.994700014591217 |
| topics[1].domain.id | https://openalex.org/domains/3 |
| topics[1].domain.display_name | Physical Sciences |
| topics[1].subfield.id | https://openalex.org/subfields/2208 |
| topics[1].subfield.display_name | Electrical and Electronic Engineering |
| topics[1].display_name | Thin-Film Transistor Technologies |
| topics[2].id | https://openalex.org/T10624 |
| topics[2].field.id | https://openalex.org/fields/22 |
| topics[2].field.display_name | Engineering |
| topics[2].score | 0.9869999885559082 |
| topics[2].domain.id | https://openalex.org/domains/3 |
| topics[2].domain.display_name | Physical Sciences |
| topics[2].subfield.id | https://openalex.org/subfields/2208 |
| topics[2].subfield.display_name | Electrical and Electronic Engineering |
| topics[2].display_name | Silicon and Solar Cell Technologies |
| funders[0].id | https://openalex.org/F4320321001 |
| funders[0].ror | https://ror.org/01h0zpd94 |
| funders[0].display_name | National Natural Science Foundation of China |
| funders[1].id | https://openalex.org/F4320327522 |
| funders[1].ror | https://ror.org/02c9qn167 |
| funders[1].display_name | Guangxi University |
| is_xpac | False |
| apc_list.value | 1843 |
| apc_list.currency | USD |
| apc_list.value_usd | 1843 |
| apc_paid.value | 1843 |
| apc_paid.currency | USD |
| apc_paid.value_usd | 1843 |
| concepts[0].id | https://openalex.org/C2780722187 |
| concepts[0].level | 2 |
| concepts[0].score | 0.7594892382621765 |
| concepts[0].wikidata | https://www.wikidata.org/wiki/Q412356 |
| concepts[0].display_name | Silicon carbide |
| concepts[1].id | https://openalex.org/C192562407 |
| concepts[1].level | 0 |
| concepts[1].score | 0.749218225479126 |
| concepts[1].wikidata | https://www.wikidata.org/wiki/Q228736 |
| concepts[1].display_name | Materials science |
| concepts[2].id | https://openalex.org/C40003534 |
| concepts[2].level | 2 |
| concepts[2].score | 0.6855567097663879 |
| concepts[2].wikidata | https://www.wikidata.org/wiki/Q862228 |
| concepts[2].display_name | Raman spectroscopy |
| concepts[3].id | https://openalex.org/C2779530757 |
| concepts[3].level | 2 |
| concepts[3].score | 0.6345510482788086 |
| concepts[3].wikidata | https://www.wikidata.org/wiki/Q1207505 |
| concepts[3].display_name | Quality (philosophy) |
| concepts[4].id | https://openalex.org/C2781285689 |
| concepts[4].level | 2 |
| concepts[4].score | 0.6120830178260803 |
| concepts[4].wikidata | https://www.wikidata.org/wiki/Q21921428 |
| concepts[4].display_name | Crystal (programming language) |
| concepts[5].id | https://openalex.org/C49040817 |
| concepts[5].level | 1 |
| concepts[5].score | 0.5978050827980042 |
| concepts[5].wikidata | https://www.wikidata.org/wiki/Q193091 |
| concepts[5].display_name | Optoelectronics |
| concepts[6].id | https://openalex.org/C19067145 |
| concepts[6].level | 2 |
| concepts[6].score | 0.5949721336364746 |
| concepts[6].wikidata | https://www.wikidata.org/wiki/Q1137203 |
| concepts[6].display_name | Thin film |
| concepts[7].id | https://openalex.org/C110738630 |
| concepts[7].level | 3 |
| concepts[7].score | 0.5698168873786926 |
| concepts[7].wikidata | https://www.wikidata.org/wiki/Q1135540 |
| concepts[7].display_name | Epitaxy |
| concepts[8].id | https://openalex.org/C169573571 |
| concepts[8].level | 3 |
| concepts[8].score | 0.5539646148681641 |
| concepts[8].wikidata | https://www.wikidata.org/wiki/Q466824 |
| concepts[8].display_name | Raman scattering |
| concepts[9].id | https://openalex.org/C2776798109 |
| concepts[9].level | 2 |
| concepts[9].score | 0.47928422689437866 |
| concepts[9].wikidata | https://www.wikidata.org/wiki/Q11391 |
| concepts[9].display_name | Ultraviolet |
| concepts[10].id | https://openalex.org/C544956773 |
| concepts[10].level | 2 |
| concepts[10].score | 0.4237470030784607 |
| concepts[10].wikidata | https://www.wikidata.org/wiki/Q670 |
| concepts[10].display_name | Silicon |
| concepts[11].id | https://openalex.org/C120665830 |
| concepts[11].level | 1 |
| concepts[11].score | 0.4191807210445404 |
| concepts[11].wikidata | https://www.wikidata.org/wiki/Q14620 |
| concepts[11].display_name | Optics |
| concepts[12].id | https://openalex.org/C2779227376 |
| concepts[12].level | 2 |
| concepts[12].score | 0.40186774730682373 |
| concepts[12].wikidata | https://www.wikidata.org/wiki/Q6505497 |
| concepts[12].display_name | Layer (electronics) |
| concepts[13].id | https://openalex.org/C41008148 |
| concepts[13].level | 0 |
| concepts[13].score | 0.23950809240341187 |
| concepts[13].wikidata | https://www.wikidata.org/wiki/Q21198 |
| concepts[13].display_name | Computer science |
| concepts[14].id | https://openalex.org/C171250308 |
| concepts[14].level | 1 |
| concepts[14].score | 0.19997161626815796 |
| concepts[14].wikidata | https://www.wikidata.org/wiki/Q11468 |
| concepts[14].display_name | Nanotechnology |
| concepts[15].id | https://openalex.org/C121332964 |
| concepts[15].level | 0 |
| concepts[15].score | 0.08691355586051941 |
| concepts[15].wikidata | https://www.wikidata.org/wiki/Q413 |
| concepts[15].display_name | Physics |
| concepts[16].id | https://openalex.org/C62520636 |
| concepts[16].level | 1 |
| concepts[16].score | 0.0 |
| concepts[16].wikidata | https://www.wikidata.org/wiki/Q944 |
| concepts[16].display_name | Quantum mechanics |
| concepts[17].id | https://openalex.org/C191897082 |
| concepts[17].level | 1 |
| concepts[17].score | 0.0 |
| concepts[17].wikidata | https://www.wikidata.org/wiki/Q11467 |
| concepts[17].display_name | Metallurgy |
| concepts[18].id | https://openalex.org/C199360897 |
| concepts[18].level | 1 |
| concepts[18].score | 0.0 |
| concepts[18].wikidata | https://www.wikidata.org/wiki/Q9143 |
| concepts[18].display_name | Programming language |
| keywords[0].id | https://openalex.org/keywords/silicon-carbide |
| keywords[0].score | 0.7594892382621765 |
| keywords[0].display_name | Silicon carbide |
| keywords[1].id | https://openalex.org/keywords/materials-science |
| keywords[1].score | 0.749218225479126 |
| keywords[1].display_name | Materials science |
| keywords[2].id | https://openalex.org/keywords/raman-spectroscopy |
| keywords[2].score | 0.6855567097663879 |
| keywords[2].display_name | Raman spectroscopy |
| keywords[3].id | https://openalex.org/keywords/quality |
| keywords[3].score | 0.6345510482788086 |
| keywords[3].display_name | Quality (philosophy) |
| keywords[4].id | https://openalex.org/keywords/crystal |
| keywords[4].score | 0.6120830178260803 |
| keywords[4].display_name | Crystal (programming language) |
| keywords[5].id | https://openalex.org/keywords/optoelectronics |
| keywords[5].score | 0.5978050827980042 |
| keywords[5].display_name | Optoelectronics |
| keywords[6].id | https://openalex.org/keywords/thin-film |
| keywords[6].score | 0.5949721336364746 |
| keywords[6].display_name | Thin film |
| keywords[7].id | https://openalex.org/keywords/epitaxy |
| keywords[7].score | 0.5698168873786926 |
| keywords[7].display_name | Epitaxy |
| keywords[8].id | https://openalex.org/keywords/raman-scattering |
| keywords[8].score | 0.5539646148681641 |
| keywords[8].display_name | Raman scattering |
| keywords[9].id | https://openalex.org/keywords/ultraviolet |
| keywords[9].score | 0.47928422689437866 |
| keywords[9].display_name | Ultraviolet |
| keywords[10].id | https://openalex.org/keywords/silicon |
| keywords[10].score | 0.4237470030784607 |
| keywords[10].display_name | Silicon |
| keywords[11].id | https://openalex.org/keywords/optics |
| keywords[11].score | 0.4191807210445404 |
| keywords[11].display_name | Optics |
| keywords[12].id | https://openalex.org/keywords/layer |
| keywords[12].score | 0.40186774730682373 |
| keywords[12].display_name | Layer (electronics) |
| keywords[13].id | https://openalex.org/keywords/computer-science |
| keywords[13].score | 0.23950809240341187 |
| keywords[13].display_name | Computer science |
| keywords[14].id | https://openalex.org/keywords/nanotechnology |
| keywords[14].score | 0.19997161626815796 |
| keywords[14].display_name | Nanotechnology |
| keywords[15].id | https://openalex.org/keywords/physics |
| keywords[15].score | 0.08691355586051941 |
| keywords[15].display_name | Physics |
| language | en |
| locations[0].id | doi:10.1364/ome.8.000119 |
| locations[0].is_oa | True |
| locations[0].source.id | https://openalex.org/S2496121912 |
| locations[0].source.issn | 2159-3930 |
| locations[0].source.type | journal |
| locations[0].source.is_oa | True |
| locations[0].source.issn_l | 2159-3930 |
| locations[0].source.is_core | True |
| locations[0].source.is_in_doaj | True |
| locations[0].source.display_name | Optical Materials Express |
| locations[0].source.host_organization | https://openalex.org/P4310315679 |
| locations[0].source.host_organization_name | Optica Publishing Group |
| locations[0].source.host_organization_lineage | https://openalex.org/P4310315679 |
| locations[0].source.host_organization_lineage_names | Optica Publishing Group |
| locations[0].license | |
| locations[0].pdf_url | |
| locations[0].version | publishedVersion |
| locations[0].raw_type | journal-article |
| locations[0].license_id | |
| locations[0].is_accepted | True |
| locations[0].is_published | True |
| locations[0].raw_source_name | Optical Materials Express |
| locations[0].landing_page_url | https://doi.org/10.1364/ome.8.000119 |
| locations[1].id | pmh:oai:cas-ir.dicp.ac.cn:321008/169193 |
| locations[1].is_oa | False |
| locations[1].source | |
| locations[1].license | |
| locations[1].pdf_url | |
| locations[1].version | submittedVersion |
| locations[1].raw_type | Article |
| locations[1].license_id | |
| locations[1].is_accepted | False |
| locations[1].is_published | False |
| locations[1].raw_source_name | |
| locations[1].landing_page_url | http://cas-ir.dicp.ac.cn/handle/321008/169192 |
| indexed_in | crossref, doaj |
| authorships[0].author.id | https://openalex.org/A5101830785 |
| authorships[0].author.orcid | https://orcid.org/0000-0001-6366-8663 |
| authorships[0].author.display_name | Lingyu Wan |
| authorships[0].countries | CN |
| authorships[0].affiliations[0].institution_ids | https://openalex.org/I150807315 |
| authorships[0].affiliations[0].raw_affiliation_string | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[0].institutions[0].id | https://openalex.org/I150807315 |
| authorships[0].institutions[0].ror | https://ror.org/02c9qn167 |
| authorships[0].institutions[0].type | education |
| authorships[0].institutions[0].lineage | https://openalex.org/I150807315 |
| authorships[0].institutions[0].country_code | CN |
| authorships[0].institutions[0].display_name | Guangxi University |
| authorships[0].author_position | first |
| authorships[0].raw_author_name | Lingyu Wan |
| authorships[0].is_corresponding | False |
| authorships[0].raw_affiliation_strings | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[1].author.id | https://openalex.org/A5063470905 |
| authorships[1].author.orcid | |
| authorships[1].author.display_name | Dishu Zhao |
| authorships[1].countries | CN |
| authorships[1].affiliations[0].institution_ids | https://openalex.org/I150807315 |
| authorships[1].affiliations[0].raw_affiliation_string | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[1].institutions[0].id | https://openalex.org/I150807315 |
| authorships[1].institutions[0].ror | https://ror.org/02c9qn167 |
| authorships[1].institutions[0].type | education |
| authorships[1].institutions[0].lineage | https://openalex.org/I150807315 |
| authorships[1].institutions[0].country_code | CN |
| authorships[1].institutions[0].display_name | Guangxi University |
| authorships[1].author_position | middle |
| authorships[1].raw_author_name | Dishu Zhao |
| authorships[1].is_corresponding | False |
| authorships[1].raw_affiliation_strings | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[2].author.id | https://openalex.org/A5048371906 |
| authorships[2].author.orcid | |
| authorships[2].author.display_name | Fangze Wang |
| authorships[2].countries | CN |
| authorships[2].affiliations[0].institution_ids | https://openalex.org/I150807315 |
| authorships[2].affiliations[0].raw_affiliation_string | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[2].institutions[0].id | https://openalex.org/I150807315 |
| authorships[2].institutions[0].ror | https://ror.org/02c9qn167 |
| authorships[2].institutions[0].type | education |
| authorships[2].institutions[0].lineage | https://openalex.org/I150807315 |
| authorships[2].institutions[0].country_code | CN |
| authorships[2].institutions[0].display_name | Guangxi University |
| authorships[2].author_position | middle |
| authorships[2].raw_author_name | Fangze Wang |
| authorships[2].is_corresponding | False |
| authorships[2].raw_affiliation_strings | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[3].author.id | https://openalex.org/A5102823431 |
| authorships[3].author.orcid | https://orcid.org/0000-0003-3936-3899 |
| authorships[3].author.display_name | Gu Xu |
| authorships[3].countries | CN |
| authorships[3].affiliations[0].institution_ids | https://openalex.org/I150807315 |
| authorships[3].affiliations[0].raw_affiliation_string | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[3].institutions[0].id | https://openalex.org/I150807315 |
| authorships[3].institutions[0].ror | https://ror.org/02c9qn167 |
| authorships[3].institutions[0].type | education |
| authorships[3].institutions[0].lineage | https://openalex.org/I150807315 |
| authorships[3].institutions[0].country_code | CN |
| authorships[3].institutions[0].display_name | Guangxi University |
| authorships[3].author_position | middle |
| authorships[3].raw_author_name | Gu Xu |
| authorships[3].is_corresponding | False |
| authorships[3].raw_affiliation_strings | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[4].author.id | https://openalex.org/A5027173274 |
| authorships[4].author.orcid | https://orcid.org/0000-0003-0593-3830 |
| authorships[4].author.display_name | Tao Lin |
| authorships[4].countries | CN |
| authorships[4].affiliations[0].institution_ids | https://openalex.org/I150807315 |
| authorships[4].affiliations[0].raw_affiliation_string | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[4].institutions[0].id | https://openalex.org/I150807315 |
| authorships[4].institutions[0].ror | https://ror.org/02c9qn167 |
| authorships[4].institutions[0].type | education |
| authorships[4].institutions[0].lineage | https://openalex.org/I150807315 |
| authorships[4].institutions[0].country_code | CN |
| authorships[4].institutions[0].display_name | Guangxi University |
| authorships[4].author_position | middle |
| authorships[4].raw_author_name | Tao Lin |
| authorships[4].is_corresponding | False |
| authorships[4].raw_affiliation_strings | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[5].author.id | https://openalex.org/A5111475516 |
| authorships[5].author.orcid | |
| authorships[5].author.display_name | Chin‐Che Tin |
| authorships[5].countries | US |
| authorships[5].affiliations[0].institution_ids | https://openalex.org/I82497590 |
| authorships[5].affiliations[0].raw_affiliation_string | #N#Department of Physics, Auburn University, Auburn, Alabama 36849, USA #N# |
| authorships[5].institutions[0].id | https://openalex.org/I82497590 |
| authorships[5].institutions[0].ror | https://ror.org/02v80fc35 |
| authorships[5].institutions[0].type | education |
| authorships[5].institutions[0].lineage | https://openalex.org/I82497590 |
| authorships[5].institutions[0].country_code | US |
| authorships[5].institutions[0].display_name | Auburn University |
| authorships[5].author_position | middle |
| authorships[5].raw_author_name | Chin-Che Tin |
| authorships[5].is_corresponding | False |
| authorships[5].raw_affiliation_strings | #N#Department of Physics, Auburn University, Auburn, Alabama 36849, USA #N# |
| authorships[6].author.id | https://openalex.org/A5085138264 |
| authorships[6].author.orcid | https://orcid.org/0000-0002-0606-5484 |
| authorships[6].author.display_name | Zhaochi Feng |
| authorships[6].countries | CN |
| authorships[6].affiliations[0].institution_ids | https://openalex.org/I180585399, https://openalex.org/I19820366 |
| authorships[6].affiliations[0].raw_affiliation_string | State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences,#R#P.O. Box 110, Dalian 116023, China |
| authorships[6].institutions[0].id | https://openalex.org/I19820366 |
| authorships[6].institutions[0].ror | https://ror.org/034t30j35 |
| authorships[6].institutions[0].type | government |
| authorships[6].institutions[0].lineage | https://openalex.org/I19820366 |
| authorships[6].institutions[0].country_code | CN |
| authorships[6].institutions[0].display_name | Chinese Academy of Sciences |
| authorships[6].institutions[1].id | https://openalex.org/I180585399 |
| authorships[6].institutions[1].ror | https://ror.org/00prkya54 |
| authorships[6].institutions[1].type | facility |
| authorships[6].institutions[1].lineage | https://openalex.org/I180585399, https://openalex.org/I19820366 |
| authorships[6].institutions[1].country_code | CN |
| authorships[6].institutions[1].display_name | Dalian Institute of Chemical Physics |
| authorships[6].author_position | middle |
| authorships[6].raw_author_name | Zhaochi Feng |
| authorships[6].is_corresponding | False |
| authorships[6].raw_affiliation_strings | State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences,#R#P.O. Box 110, Dalian 116023, China |
| authorships[7].author.id | https://openalex.org/A5038547295 |
| authorships[7].author.orcid | https://orcid.org/0000-0002-8982-8757 |
| authorships[7].author.display_name | Zhe Chuan Feng |
| authorships[7].countries | CN |
| authorships[7].affiliations[0].institution_ids | https://openalex.org/I150807315 |
| authorships[7].affiliations[0].raw_affiliation_string | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| authorships[7].institutions[0].id | https://openalex.org/I150807315 |
| authorships[7].institutions[0].ror | https://ror.org/02c9qn167 |
| authorships[7].institutions[0].type | education |
| authorships[7].institutions[0].lineage | https://openalex.org/I150807315 |
| authorships[7].institutions[0].country_code | CN |
| authorships[7].institutions[0].display_name | Guangxi University |
| authorships[7].author_position | last |
| authorships[7].raw_author_name | Zhe Chuan Feng |
| authorships[7].is_corresponding | False |
| authorships[7].raw_affiliation_strings | Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, China |
| has_content.pdf | False |
| has_content.grobid_xml | False |
| is_paratext | False |
| open_access.is_oa | True |
| open_access.oa_url | https://doi.org/10.1364/ome.8.000119 |
| open_access.oa_status | gold |
| open_access.any_repository_has_fulltext | False |
| created_date | 2025-10-10T00:00:00 |
| display_name | Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes |
| has_fulltext | False |
| is_retracted | False |
| updated_date | 2025-11-06T03:46:38.306776 |
| primary_topic.id | https://openalex.org/T10361 |
| primary_topic.field.id | https://openalex.org/fields/22 |
| primary_topic.field.display_name | Engineering |
| primary_topic.score | 1.0 |
| primary_topic.domain.id | https://openalex.org/domains/3 |
| primary_topic.domain.display_name | Physical Sciences |
| primary_topic.subfield.id | https://openalex.org/subfields/2208 |
| primary_topic.subfield.display_name | Electrical and Electronic Engineering |
| primary_topic.display_name | Silicon Carbide Semiconductor Technologies |
| related_works | https://openalex.org/W2058864804, https://openalex.org/W960385439, https://openalex.org/W2138878738, https://openalex.org/W4391262445, https://openalex.org/W4393417729, https://openalex.org/W3108187263, https://openalex.org/W2908284971, https://openalex.org/W1487885362, https://openalex.org/W136089598, https://openalex.org/W4399445128 |
| cited_by_count | 13 |
| counts_by_year[0].year | 2024 |
| counts_by_year[0].cited_by_count | 1 |
| counts_by_year[1].year | 2023 |
| counts_by_year[1].cited_by_count | 2 |
| counts_by_year[2].year | 2022 |
| counts_by_year[2].cited_by_count | 5 |
| counts_by_year[3].year | 2021 |
| counts_by_year[3].cited_by_count | 2 |
| counts_by_year[4].year | 2020 |
| counts_by_year[4].cited_by_count | 1 |
| counts_by_year[5].year | 2018 |
| counts_by_year[5].cited_by_count | 2 |
| locations_count | 2 |
| best_oa_location.id | doi:10.1364/ome.8.000119 |
| best_oa_location.is_oa | True |
| best_oa_location.source.id | https://openalex.org/S2496121912 |
| best_oa_location.source.issn | 2159-3930 |
| best_oa_location.source.type | journal |
| best_oa_location.source.is_oa | True |
| best_oa_location.source.issn_l | 2159-3930 |
| best_oa_location.source.is_core | True |
| best_oa_location.source.is_in_doaj | True |
| best_oa_location.source.display_name | Optical Materials Express |
| best_oa_location.source.host_organization | https://openalex.org/P4310315679 |
| best_oa_location.source.host_organization_name | Optica Publishing Group |
| best_oa_location.source.host_organization_lineage | https://openalex.org/P4310315679 |
| best_oa_location.source.host_organization_lineage_names | Optica Publishing Group |
| best_oa_location.license | |
| best_oa_location.pdf_url | |
| best_oa_location.version | publishedVersion |
| best_oa_location.raw_type | journal-article |
| best_oa_location.license_id | |
| best_oa_location.is_accepted | True |
| best_oa_location.is_published | True |
| best_oa_location.raw_source_name | Optical Materials Express |
| best_oa_location.landing_page_url | https://doi.org/10.1364/ome.8.000119 |
| primary_location.id | doi:10.1364/ome.8.000119 |
| primary_location.is_oa | True |
| primary_location.source.id | https://openalex.org/S2496121912 |
| primary_location.source.issn | 2159-3930 |
| primary_location.source.type | journal |
| primary_location.source.is_oa | True |
| primary_location.source.issn_l | 2159-3930 |
| primary_location.source.is_core | True |
| primary_location.source.is_in_doaj | True |
| primary_location.source.display_name | Optical Materials Express |
| primary_location.source.host_organization | https://openalex.org/P4310315679 |
| primary_location.source.host_organization_name | Optica Publishing Group |
| primary_location.source.host_organization_lineage | https://openalex.org/P4310315679 |
| primary_location.source.host_organization_lineage_names | Optica Publishing Group |
| primary_location.license | |
| primary_location.pdf_url | |
| primary_location.version | publishedVersion |
| primary_location.raw_type | journal-article |
| primary_location.license_id | |
| primary_location.is_accepted | True |
| primary_location.is_published | True |
| primary_location.raw_source_name | Optical Materials Express |
| primary_location.landing_page_url | https://doi.org/10.1364/ome.8.000119 |
| publication_date | 2017-12-21 |
| publication_year | 2017 |
| referenced_works | https://openalex.org/W2054331217, https://openalex.org/W2394777921, https://openalex.org/W2588167803, https://openalex.org/W1983179157, https://openalex.org/W2199416987, https://openalex.org/W2516196141, https://openalex.org/W2077043244, https://openalex.org/W2020178648, https://openalex.org/W2565071560, https://openalex.org/W2057427415, https://openalex.org/W2006336198, https://openalex.org/W1984271179, https://openalex.org/W2032048401, https://openalex.org/W6647023851, https://openalex.org/W2036175447, https://openalex.org/W1037629816, https://openalex.org/W1966519188, https://openalex.org/W1973218964, https://openalex.org/W2502305169, https://openalex.org/W2566670620, https://openalex.org/W2073809508, https://openalex.org/W2039154324, https://openalex.org/W1970432411, https://openalex.org/W2034429087 |
| referenced_works_count | 24 |
| abstract_inverted_index.a | 4, 49, 59 |
| abstract_inverted_index.In | 44 |
| abstract_inverted_index.We | 84 |
| abstract_inverted_index.an | 103 |
| abstract_inverted_index.be | 102, 140 |
| abstract_inverted_index.in | 122 |
| abstract_inverted_index.is | 10, 30 |
| abstract_inverted_index.of | 3, 15, 25, 41, 58, 152, 157 |
| abstract_inverted_index.on | 70 |
| abstract_inverted_index.to | 12, 54, 79, 96, 142 |
| abstract_inverted_index.we | 47, 75 |
| abstract_inverted_index.(C) | 148 |
| abstract_inverted_index.OSA | 159 |
| abstract_inverted_index.Our | 107 |
| abstract_inverted_index.The | 0, 135 |
| abstract_inverted_index.and | 51, 100, 126 |
| abstract_inverted_index.are | 93 |
| abstract_inverted_index.can | 101 |
| abstract_inverted_index.for | 117 |
| abstract_inverted_index.may | 138 |
| abstract_inverted_index.new | 136 |
| abstract_inverted_index.our | 77 |
| abstract_inverted_index.the | 13, 22, 33, 39, 42, 56, 71, 80, 97, 110, 115, 118, 123, 129, 143, 155, 158 |
| abstract_inverted_index.(UV) | 63 |
| abstract_inverted_index.2017 | 149 |
| abstract_inverted_index.Open | 160 |
| abstract_inverted_index.also | 139 |
| abstract_inverted_index.bulk | 35 |
| abstract_inverted_index.data | 119 |
| abstract_inverted_index.film | 29, 146 |
| abstract_inverted_index.more | 94, 133 |
| abstract_inverted_index.much | 132 |
| abstract_inverted_index.need | 116 |
| abstract_inverted_index.same | 34 |
| abstract_inverted_index.than | 68 |
| abstract_inverted_index.that | 86 |
| abstract_inverted_index.thin | 28, 145 |
| abstract_inverted_index.this | 45 |
| abstract_inverted_index.were | 90 |
| abstract_inverted_index.with | 38 |
| abstract_inverted_index.(RS). | 66 |
| abstract_inverted_index.Raman | 64 |
| abstract_inverted_index.layer | 9 |
| abstract_inverted_index.makes | 128 |
| abstract_inverted_index.modes | 82 |
| abstract_inverted_index.other | 144 |
| abstract_inverted_index.power | 19 |
| abstract_inverted_index.probe | 40 |
| abstract_inverted_index.shift | 76 |
| abstract_inverted_index.terms | 156 |
| abstract_inverted_index.under | 154 |
| abstract_inverted_index.using | 61 |
| abstract_inverted_index.which | 89 |
| abstract_inverted_index.4H-SiC | 26 |
| abstract_inverted_index.Access | 161 |
| abstract_inverted_index.Rather | 67 |
| abstract_inverted_index.assess | 55 |
| abstract_inverted_index.method | 137 |
| abstract_inverted_index.modes, | 74, 88 |
| abstract_inverted_index.paper, | 46 |
| abstract_inverted_index.probe. | 106 |
| abstract_inverted_index.simple | 50 |
| abstract_inverted_index.America | 153 |
| abstract_inverted_index.Optical | 150 |
| abstract_inverted_index.Society | 151 |
| abstract_inverted_index.allowed | 73 |
| abstract_inverted_index.applied | 141 |
| abstract_inverted_index.because | 32 |
| abstract_inverted_index.carbide | 6 |
| abstract_inverted_index.crucial | 11 |
| abstract_inverted_index.crystal | 1, 111 |
| abstract_inverted_index.fitting | 120 |
| abstract_inverted_index.method, | 125 |
| abstract_inverted_index.propose | 48 |
| abstract_inverted_index.quality | 2, 23, 57, 105, 112, 130 |
| abstract_inverted_index.usually | 91 |
| abstract_inverted_index.without | 114 |
| abstract_inverted_index.(4H-SiC) | 7 |
| abstract_inverted_index.However, | 21 |
| abstract_inverted_index.analyzes | 109 |
| abstract_inverted_index.approach | 108 |
| abstract_inverted_index.devices. | 20 |
| abstract_inverted_index.focusing | 69 |
| abstract_inverted_index.ignored, | 92 |
| abstract_inverted_index.instead. | 83 |
| abstract_inverted_index.involved | 121 |
| abstract_inverted_index.material | 36 |
| abstract_inverted_index.normally | 72 |
| abstract_inverted_index.strategy | 53 |
| abstract_inverted_index.swiftly, | 113 |
| abstract_inverted_index.Agreement | 163 |
| abstract_inverted_index.attention | 78 |
| abstract_inverted_index.effective | 104 |
| abstract_inverted_index.epilayer. | 43 |
| abstract_inverted_index.epitaxial | 8 |
| abstract_inverted_index.forbidden | 81, 87 |
| abstract_inverted_index.sensitive | 95 |
| abstract_inverted_index.therefore | 127 |
| abstract_inverted_index.4H-silicon | 5 |
| abstract_inverted_index.Publishing | 162 |
| abstract_inverted_index.assessment | 24, 131 |
| abstract_inverted_index.efficient. | 134 |
| abstract_inverted_index.electronic | 18 |
| abstract_inverted_index.interferes | 37 |
| abstract_inverted_index.materials. | 147 |
| abstract_inverted_index.crystalline | 98 |
| abstract_inverted_index.demonstrate | 85 |
| abstract_inverted_index.development | 14 |
| abstract_inverted_index.problematic | 31 |
| abstract_inverted_index.ultraviolet | 62 |
| abstract_inverted_index.4H-SiC-based | 17 |
| abstract_inverted_index.conventional | 124 |
| abstract_inverted_index.homoepilayer | 60 |
| abstract_inverted_index.imperfection | 99 |
| abstract_inverted_index.spectroscopy | 65 |
| abstract_inverted_index.homoepitaxial | 27 |
| abstract_inverted_index.straightforward | 52 |
| abstract_inverted_index.high-performance | 16 |
| cited_by_percentile_year.max | 98 |
| cited_by_percentile_year.min | 89 |
| countries_distinct_count | 2 |
| institutions_distinct_count | 8 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/9 |
| sustainable_development_goals[0].score | 0.4099999964237213 |
| sustainable_development_goals[0].display_name | Industry, innovation and infrastructure |
| citation_normalized_percentile.value | 0.67089088 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |