Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS Article Swipe
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Alberto Eljarrat
,
Lluís López‐Conesa
,
César Magén
,
N. García-Lepetit
,
Ž. Gačević
,
E. Calleja
,
F. Peiró
,
Sònia Estradé
·
YOU?
·
· 2016
· Open Access
·
· DOI: https://doi.org/10.1039/c6cp04493j
· OA: W2497341959
YOU?
·
· 2016
· Open Access
·
· DOI: https://doi.org/10.1039/c6cp04493j
· OA: W2497341959
We present a detailed examination of a multiple In<sub>x</sub>Ga<sub>1−x</sub>N quantum well (QW) structure for optoelectronic applications.
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