Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide-Band-Gap, and High-Voltage Applications Article Swipe
Related Concepts
Diffusion
Stability (learning theory)
Preprint
Charge (physics)
Fermi Gamma-ray Space Telescope
Voltage
Semiconductor
Fermi level
Band gap
Physics
Computational physics
Optoelectronics
Materials science
Statistical physics
Computer science
Electronic engineering
Condensed matter physics
Quantum mechanics
Engineering
Machine learning
Electron
Zlatan Stanojević
,
Jose Maria Gonzalez Medina
,
Franz Schanovsky
,
M. Karner
·
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.36227/techrxiv.21132637.v2
· OA: W4309528873
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.36227/techrxiv.21132637.v2
· OA: W4309528873
<p>In this preprint we present a novel approach to solving the transport problem in semiconductors. We reformulate the drift-diffusion equations in terms of the quasi-Fermi-energies as solution variables; a drastic increase in numerical stability is achieved, which permits the simulation of devices at cryogenic temperatures as well as wide-band-gap devices using double precision arithmetic, instead of extended precision arithmetic which would otherwise be required to solve these applications using regular drift-diffusion.</p>
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