Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping Article Swipe

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Taekham Kim , Doohyeok Lim , Jaemin Son , Kyoungah Cho , Sangsig Kim ·

YOU? · · 2022 · Open Access · · DOI: https://doi.org/10.1088/1361-6528/ac7dae

In this study, we perform reconfigurable n- and p-channel operations of a tri-top-gate field-effect transistor (FET) made of a p + -i-n + silicon nanowire (SiNW). In the reconfigurable FET (RFET), two polarity gates and one control gate induce virtual electrostatic doping in the SiNW channel. The polarity gates are electrically connected to each other and program the channel type, while the control gate modulates the flow of charge carriers in the SiNW channel. The SiNW RFET features simple device design, symmetrical electrical characteristics in the n- and p-channel operation modes using p + -i-n + diode characteristics, and both operation modes exhibit high ON/OFF ratios (∼10 6 ) and high ON currents (∼1 μ A μ m −1 ). The proposed device is demonstrated experimentally using a fully CMOS-compatible top-down processes.

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Electrical Engineering

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Materials science Transistor Nanowire Field-effect transistor Polarity (international relations) Optoelectronics Doping Control reconfiguration Diode Silicon CMOS Channel (broadcasting) Electrical engineering Nanotechnology Voltage Computer science Embedded system Engineering Chemistry Biochemistry Cell

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Type: article
Language: en
Landing Page: https://doi.org/10.1088/1361-6528/ac7dae
OA Status: hybrid
Cited By: 5
References: 17
Related Works: 10
OpenAlex ID: https://openalex.org/W4283774155

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DOI: https://doi.org/10.1088/1361-6528/ac7dae

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Title: Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping

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Language: en

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Publication year: 2022

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Publication date: 2022-07-01

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Authors: Taekham Kim, Doohyeok Lim, Jaemin Son, Kyoungah Cho, Sangsig Kim

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Landing page: https://doi.org/10.1088/1361-6528/ac7dae

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Concepts: Materials science, Transistor, Nanowire, Field-effect transistor, Polarity (international relations), Optoelectronics, Doping, Control reconfiguration, Diode, Silicon, CMOS, Channel (broadcasting), Electrical engineering, Nanotechnology, Voltage, Computer science, Embedded system, Engineering, Chemistry, Biochemistry, Cell

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Cited by: 5

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