Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process Article Swipe
Meng‐Fang Lin
,
Xu Gao
,
Nobuhiko Mitoma
,
Takio Kizu
,
Wei Ou‐Yang
,
Shinya Aikawa
,
Toshihide Nabatame
,
Kazuhito Tsukagoshi
·
YOU?
·
· 2015
· Open Access
·
· DOI: https://doi.org/10.1063/1.4905903
YOU?
·
· 2015
· Open Access
·
· DOI: https://doi.org/10.1063/1.4905903
The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InOx thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InOx TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InOx/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1063/1.4905903
- https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/1.4905903/12816244/017116_1_online.pdf
- OA Status
- gold
- Cited By
- 16
- References
- 51
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2032089942
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W2032089942Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1063/1.4905903Digital Object Identifier
- Title
-
Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing processWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2015Year of publication
- Publication date
-
2015-01-01Full publication date if available
- Authors
-
Meng‐Fang Lin, Xu Gao, Nobuhiko Mitoma, Takio Kizu, Wei Ou‐Yang, Shinya Aikawa, Toshihide Nabatame, Kazuhito TsukagoshiList of authors in order
- Landing page
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https://doi.org/10.1063/1.4905903Publisher landing page
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https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/1.4905903/12816244/017116_1_online.pdfDirect link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
-
https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/1.4905903/12816244/017116_1_online.pdfDirect OA link when available
- Concepts
-
Thin-film transistor, Materials science, Annealing (glass), Passivation, Indium, Threshold voltage, Optoelectronics, Transistor, Oxide, Hafnium, Thin film, Layer (electronics), Voltage, Nanotechnology, Metallurgy, Electrical engineering, Zirconium, EngineeringTop concepts (fields/topics) attached by OpenAlex
- Cited by
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16Total citation count in OpenAlex
- Citations by year (recent)
-
2024: 1, 2023: 1, 2022: 1, 2021: 1, 2020: 1Per-year citation counts (last 5 years)
- References (count)
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51Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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