Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications Article Swipe
Manvendra Singh Chauhan
,
Sumit Choudhary
,
Satinder K. Sharma
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1002/aelm.202300724
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1002/aelm.202300724
Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications. The analog resistive switching (RS) tuning with a sizable memory window is crucial for realizing multi‐level storage devices. This work demonstrates the multi‐level storage capability of fabricated Ag/NiO/W ReRAM architecture, controlled through voltage modulations. The fabricated ReRAM structures exhibit stable bipolar analog RS, non‐overlapping resistance, and endurance of ≈10 4 cycles, respectively, with marginal statistical variations/fluctuations. Also, the fabricated ReRAM offers highly controlled and stable retention characteristics tested up to ≈10 4 s with significantly controlled statistical variations/fluctuations. Adjacent thereto, it offers a substantially lower operating SET and RESET voltage of 1 and −1 V, respectively. Moreover, the non‐overlapping multiple resistive states are observed with the voltage pulse modulation schemes. Furthermore, the current switching mechanism is described using a model proposed for the conductive filament growth and the contribution of the NiO/W interface layer (IL) toward notable RS of fabricated Ag/NiO/W structures.
Related Topics
Concepts
Resistive random-access memory
Non-blocking I/O
Materials science
Neuromorphic engineering
Optoelectronics
Reset (finance)
Voltage
Non-volatile memory
Modulation (music)
Nanotechnology
Electronic engineering
Electrical engineering
Computer science
Physics
Engineering
Financial economics
Chemistry
Biochemistry
Economics
Acoustics
Machine learning
Catalysis
Artificial neural network
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1002/aelm.202300724
- https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202300724
- OA Status
- gold
- Cited By
- 14
- References
- 59
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4390950755
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4390950755Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1002/aelm.202300724Digital Object Identifier
- Title
-
Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory ApplicationsWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2024Year of publication
- Publication date
-
2024-01-17Full publication date if available
- Authors
-
Manvendra Singh Chauhan, Sumit Choudhary, Satinder K. SharmaList of authors in order
- Landing page
-
https://doi.org/10.1002/aelm.202300724Publisher landing page
- PDF URL
-
https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202300724Direct link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
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https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202300724Direct OA link when available
- Concepts
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Resistive random-access memory, Non-blocking I/O, Materials science, Neuromorphic engineering, Optoelectronics, Reset (finance), Voltage, Non-volatile memory, Modulation (music), Nanotechnology, Electronic engineering, Electrical engineering, Computer science, Physics, Engineering, Financial economics, Chemistry, Biochemistry, Economics, Acoustics, Machine learning, Catalysis, Artificial neural networkTop concepts (fields/topics) attached by OpenAlex
- Cited by
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14Total citation count in OpenAlex
- Citations by year (recent)
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2025: 7, 2024: 7Per-year citation counts (last 5 years)
- References (count)
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59Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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