Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure (Adv. Electron. Mater. 9/2017) Article Swipe

PDF

Yi‐Ting Tseng , Po‐Hsun Chen , Ting‐Chang Chang , Kuan‐Chang Chang , Tsung‐Ming Tsai , Chih‐Cheng Shih , Hui‐Chun Huang , Cheng‐Chi Yang , Chih‐Yang Lin , Cheng‐Hsien Wu , Haimei Zheng , Shengdong Zhang , Simon M. Sze ·

YOU? · · 2017 · Open Access · · DOI: https://doi.org/10.1002/aelm.201770041

A rising forming voltage issue with scaling-down resistive random access memory (RRAM) device cells is successfully solved by introducing new high-permittivity (high-k) material as the side-wall spacer structure. As reported by Ting-Chang Chang, Kuan-Chang Chang, and co-workers in article number 1700171, both COMSOL-simulated electrical field and electrical measurements confirm the confined the electrical field by the surrounded high-k spacer. The cross section views clearly show the different structures with a spacer.

Related Topics

Materials Science

Random-Access Memory

Voltage

Random Access Memories

Electric Field

Optoelectronics

Nanotechnology

Condensed Matter Physics

Electrical Engineering

Concepts

Resistive random-access memory Materials science Resistive touchscreen Scaling Random access memory Voltage High voltage Random access Electric field Optoelectronics Nanotechnology Condensed matter physics Electrical engineering Computer science Physics Engineering Mathematics Computer hardware Operating system Quantum mechanics Geometry

Metadata

Type: article
Language: en
Landing Page: https://doi.org/10.1002/aelm.201770041
PDF: https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.201770041
OA Status: bronze
Related Works: 10
OpenAlex ID: https://openalex.org/W2754120366

All OpenAlex metadata

Raw OpenAlex JSON

OpenAlex ID: https://openalex.org/W2754120366

Canonical identifier for this work in OpenAlex
DOI: https://doi.org/10.1002/aelm.201770041

Digital Object Identifier
Title: Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure (Adv. Electron. Mater. 9/2017)

Work title
Type: article

OpenAlex work type
Language: en

Primary language
Publication year: 2017

Year of publication
Publication date: 2017-09-01

Full publication date if available
Authors: Yi‐Ting Tseng, Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih‐Cheng Shih, Hui‐Chun Huang, Cheng‐Chi Yang, Chih‐Yang Lin, Cheng‐Hsien Wu, Haimei Zheng, Shengdong Zhang, Simon M. Sze

List of authors in order
Landing page: https://doi.org/10.1002/aelm.201770041

Publisher landing page
PDF URL: https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.201770041

Direct link to full text PDF
Open access: Yes

Whether a free full text is available
OA status: bronze

Open access status per OpenAlex
OA URL: https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.201770041

Direct OA link when available
Concepts: Resistive random-access memory, Materials science, Resistive touchscreen, Scaling, Random access memory, Voltage, High voltage, Random access, Electric field, Optoelectronics, Nanotechnology, Condensed matter physics, Electrical engineering, Computer science, Physics, Engineering, Mathematics, Computer hardware, Operating system, Quantum mechanics, Geometry

Top concepts (fields/topics) attached by OpenAlex
Cited by: 0

Total citation count in OpenAlex
Related works (count): 10

Other works algorithmically related by OpenAlex

Full payload

id	https://openalex.org/W2754120366
doi	https://doi.org/10.1002/aelm.201770041
ids.doi	https://doi.org/10.1002/aelm.201770041
ids.mag	2754120366
ids.openalex	https://openalex.org/W2754120366
fwci	0.0
type	article
title	Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure (Adv. Electron. Mater. 9/2017)
biblio.issue	9
biblio.volume	3
biblio.last_page
biblio.first_page
topics[0].id	https://openalex.org/T10502
topics[0].field.id	https://openalex.org/fields/22
topics[0].field.display_name	Engineering
topics[0].score	0.9921000003814697
topics[0].domain.id	https://openalex.org/domains/3
topics[0].domain.display_name	Physical Sciences
topics[0].subfield.id	https://openalex.org/subfields/2208
topics[0].subfield.display_name	Electrical and Electronic Engineering
topics[0].display_name	Advanced Memory and Neural Computing
topics[1].id	https://openalex.org/T11128
topics[1].field.id	https://openalex.org/fields/25
topics[1].field.display_name	Materials Science
topics[1].score	0.9746000170707703
topics[1].domain.id	https://openalex.org/domains/3
topics[1].domain.display_name	Physical Sciences
topics[1].subfield.id	https://openalex.org/subfields/2507
topics[1].subfield.display_name	Polymers and Plastics
topics[1].display_name	Transition Metal Oxide Nanomaterials
topics[2].id	https://openalex.org/T12588
topics[2].field.id	https://openalex.org/fields/25
topics[2].field.display_name	Materials Science
topics[2].score	0.9207000136375427
topics[2].domain.id	https://openalex.org/domains/3
topics[2].domain.display_name	Physical Sciences
topics[2].subfield.id	https://openalex.org/subfields/2505
topics[2].subfield.display_name	Materials Chemistry
topics[2].display_name	Electronic and Structural Properties of Oxides
is_xpac	False
apc_list.value	3100
apc_list.currency	USD
apc_list.value_usd	3100
apc_paid
concepts[0].id	https://openalex.org/C182019814
concepts[0].level	3
concepts[0].score	0.93815016746521
concepts[0].wikidata	https://www.wikidata.org/wiki/Q1143830
concepts[0].display_name	Resistive random-access memory
concepts[1].id	https://openalex.org/C192562407
concepts[1].level	0
concepts[1].score	0.7493757009506226
concepts[1].wikidata	https://www.wikidata.org/wiki/Q228736
concepts[1].display_name	Materials science
concepts[2].id	https://openalex.org/C6899612
concepts[2].level	2
concepts[2].score	0.7374019622802734
concepts[2].wikidata	https://www.wikidata.org/wiki/Q852911
concepts[2].display_name	Resistive touchscreen
concepts[3].id	https://openalex.org/C99844830
concepts[3].level	2
concepts[3].score	0.647994875907898
concepts[3].wikidata	https://www.wikidata.org/wiki/Q102441924
concepts[3].display_name	Scaling
concepts[4].id	https://openalex.org/C2994168587
concepts[4].level	2
concepts[4].score	0.5470288395881653
concepts[4].wikidata	https://www.wikidata.org/wiki/Q5295
concepts[4].display_name	Random access memory
concepts[5].id	https://openalex.org/C165801399
concepts[5].level	2
concepts[5].score	0.49808573722839355
concepts[5].wikidata	https://www.wikidata.org/wiki/Q25428
concepts[5].display_name	Voltage
concepts[6].id	https://openalex.org/C88182573
concepts[6].level	3
concepts[6].score	0.46883314847946167
concepts[6].wikidata	https://www.wikidata.org/wiki/Q1139740
concepts[6].display_name	High voltage
concepts[7].id	https://openalex.org/C101722063
concepts[7].level	2
concepts[7].score	0.4526899755001068
concepts[7].wikidata	https://www.wikidata.org/wiki/Q218825
concepts[7].display_name	Random access
concepts[8].id	https://openalex.org/C60799052
concepts[8].level	2
concepts[8].score	0.4389432668685913
concepts[8].wikidata	https://www.wikidata.org/wiki/Q46221
concepts[8].display_name	Electric field
concepts[9].id	https://openalex.org/C49040817
concepts[9].level	1
concepts[9].score	0.4160413444042206
concepts[9].wikidata	https://www.wikidata.org/wiki/Q193091
concepts[9].display_name	Optoelectronics
concepts[10].id	https://openalex.org/C171250308
concepts[10].level	1
concepts[10].score	0.3628358244895935
concepts[10].wikidata	https://www.wikidata.org/wiki/Q11468
concepts[10].display_name	Nanotechnology
concepts[11].id	https://openalex.org/C26873012
concepts[11].level	1
concepts[11].score	0.360302209854126
concepts[11].wikidata	https://www.wikidata.org/wiki/Q214781
concepts[11].display_name	Condensed matter physics
concepts[12].id	https://openalex.org/C119599485
concepts[12].level	1
concepts[12].score	0.28444164991378784
concepts[12].wikidata	https://www.wikidata.org/wiki/Q43035
concepts[12].display_name	Electrical engineering
concepts[13].id	https://openalex.org/C41008148
concepts[13].level	0
concepts[13].score	0.15081626176834106
concepts[13].wikidata	https://www.wikidata.org/wiki/Q21198
concepts[13].display_name	Computer science
concepts[14].id	https://openalex.org/C121332964
concepts[14].level	0
concepts[14].score	0.131598562002182
concepts[14].wikidata	https://www.wikidata.org/wiki/Q413
concepts[14].display_name	Physics
concepts[15].id	https://openalex.org/C127413603
concepts[15].level	0
concepts[15].score	0.11569526791572571
concepts[15].wikidata	https://www.wikidata.org/wiki/Q11023
concepts[15].display_name	Engineering
concepts[16].id	https://openalex.org/C33923547
concepts[16].level	0
concepts[16].score	0.0
concepts[16].wikidata	https://www.wikidata.org/wiki/Q395
concepts[16].display_name	Mathematics
concepts[17].id	https://openalex.org/C9390403
concepts[17].level	1
concepts[17].score	0.0
concepts[17].wikidata	https://www.wikidata.org/wiki/Q3966
concepts[17].display_name	Computer hardware
concepts[18].id	https://openalex.org/C111919701
concepts[18].level	1
concepts[18].score	0.0
concepts[18].wikidata	https://www.wikidata.org/wiki/Q9135
concepts[18].display_name	Operating system
concepts[19].id	https://openalex.org/C62520636
concepts[19].level	1
concepts[19].score	0.0
concepts[19].wikidata	https://www.wikidata.org/wiki/Q944
concepts[19].display_name	Quantum mechanics
concepts[20].id	https://openalex.org/C2524010
concepts[20].level	1
concepts[20].score	0.0
concepts[20].wikidata	https://www.wikidata.org/wiki/Q8087
concepts[20].display_name	Geometry
keywords[0].id	https://openalex.org/keywords/resistive-random-access-memory
keywords[0].score	0.93815016746521
keywords[0].display_name	Resistive random-access memory
keywords[1].id	https://openalex.org/keywords/materials-science
keywords[1].score	0.7493757009506226
keywords[1].display_name	Materials science
keywords[2].id	https://openalex.org/keywords/resistive-touchscreen
keywords[2].score	0.7374019622802734
keywords[2].display_name	Resistive touchscreen
keywords[3].id	https://openalex.org/keywords/scaling
keywords[3].score	0.647994875907898
keywords[3].display_name	Scaling
keywords[4].id	https://openalex.org/keywords/random-access-memory
keywords[4].score	0.5470288395881653
keywords[4].display_name	Random access memory
keywords[5].id	https://openalex.org/keywords/voltage
keywords[5].score	0.49808573722839355
keywords[5].display_name	Voltage
keywords[6].id	https://openalex.org/keywords/high-voltage
keywords[6].score	0.46883314847946167
keywords[6].display_name	High voltage
keywords[7].id	https://openalex.org/keywords/random-access
keywords[7].score	0.4526899755001068
keywords[7].display_name	Random access
keywords[8].id	https://openalex.org/keywords/electric-field
keywords[8].score	0.4389432668685913
keywords[8].display_name	Electric field
keywords[9].id	https://openalex.org/keywords/optoelectronics
keywords[9].score	0.4160413444042206
keywords[9].display_name	Optoelectronics
keywords[10].id	https://openalex.org/keywords/nanotechnology
keywords[10].score	0.3628358244895935
keywords[10].display_name	Nanotechnology
keywords[11].id	https://openalex.org/keywords/condensed-matter-physics
keywords[11].score	0.360302209854126
keywords[11].display_name	Condensed matter physics
keywords[12].id	https://openalex.org/keywords/electrical-engineering
keywords[12].score	0.28444164991378784
keywords[12].display_name	Electrical engineering
keywords[13].id	https://openalex.org/keywords/computer-science
keywords[13].score	0.15081626176834106
keywords[13].display_name	Computer science
keywords[14].id	https://openalex.org/keywords/physics
keywords[14].score	0.131598562002182
keywords[14].display_name	Physics
keywords[15].id	https://openalex.org/keywords/engineering
keywords[15].score	0.11569526791572571
keywords[15].display_name	Engineering
language	en
locations[0].id	doi:10.1002/aelm.201770041
locations[0].is_oa	True
locations[0].source.id	https://openalex.org/S2765003236
locations[0].source.issn	2199-160X
locations[0].source.type	journal
locations[0].source.is_oa	False
locations[0].source.issn_l	2199-160X
locations[0].source.is_core	True
locations[0].source.is_in_doaj	True
locations[0].source.display_name	Advanced Electronic Materials
locations[0].source.host_organization	https://openalex.org/P4310320595
locations[0].source.host_organization_name	Wiley
locations[0].source.host_organization_lineage	https://openalex.org/P4310320595
locations[0].source.host_organization_lineage_names	Wiley
locations[0].license
locations[0].pdf_url	https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.201770041
locations[0].version	publishedVersion
locations[0].raw_type	journal-article
locations[0].license_id
locations[0].is_accepted	True
locations[0].is_published	True
locations[0].raw_source_name	Advanced Electronic Materials
locations[0].landing_page_url	https://doi.org/10.1002/aelm.201770041
indexed_in	crossref, doaj
authorships[0].author.id	https://openalex.org/A5109969780
authorships[0].author.orcid
authorships[0].author.display_name	Yi‐Ting Tseng
authorships[0].countries	TW
authorships[0].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[0].affiliations[0].raw_affiliation_string	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[0].institutions[0].id	https://openalex.org/I142974352
authorships[0].institutions[0].ror	https://ror.org/00mjawt10
authorships[0].institutions[0].type	education
authorships[0].institutions[0].lineage	https://openalex.org/I142974352
authorships[0].institutions[0].country_code	TW
authorships[0].institutions[0].display_name	National Sun Yat-sen University
authorships[0].author_position	first
authorships[0].raw_author_name	Yi‐Ting Tseng
authorships[0].is_corresponding	False
authorships[0].raw_affiliation_strings	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[1].author.id	https://openalex.org/A5100695832
authorships[1].author.orcid	https://orcid.org/0000-0001-5223-793X
authorships[1].author.display_name	Po‐Hsun Chen
authorships[1].countries	TW
authorships[1].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[1].affiliations[0].raw_affiliation_string	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[1].institutions[0].id	https://openalex.org/I142974352
authorships[1].institutions[0].ror	https://ror.org/00mjawt10
authorships[1].institutions[0].type	education
authorships[1].institutions[0].lineage	https://openalex.org/I142974352
authorships[1].institutions[0].country_code	TW
authorships[1].institutions[0].display_name	National Sun Yat-sen University
authorships[1].author_position	middle
authorships[1].raw_author_name	Po‐Hsun Chen
authorships[1].is_corresponding	False
authorships[1].raw_affiliation_strings	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[2].author.id	https://openalex.org/A5014223462
authorships[2].author.orcid	https://orcid.org/0000-0002-5301-6693
authorships[2].author.display_name	Ting‐Chang Chang
authorships[2].countries	TW
authorships[2].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[2].affiliations[0].raw_affiliation_string	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[2].institutions[0].id	https://openalex.org/I142974352
authorships[2].institutions[0].ror	https://ror.org/00mjawt10
authorships[2].institutions[0].type	education
authorships[2].institutions[0].lineage	https://openalex.org/I142974352
authorships[2].institutions[0].country_code	TW
authorships[2].institutions[0].display_name	National Sun Yat-sen University
authorships[2].author_position	middle
authorships[2].raw_author_name	Ting‐Chang Chang
authorships[2].is_corresponding	False
authorships[2].raw_affiliation_strings	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[3].author.id	https://openalex.org/A5067837460
authorships[3].author.orcid	https://orcid.org/0000-0001-5056-0047
authorships[3].author.display_name	Kuan‐Chang Chang
authorships[3].countries	CN
authorships[3].affiliations[0].institution_ids	https://openalex.org/I20231570
authorships[3].affiliations[0].raw_affiliation_string	School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055 China
authorships[3].institutions[0].id	https://openalex.org/I20231570
authorships[3].institutions[0].ror	https://ror.org/02v51f717
authorships[3].institutions[0].type	education
authorships[3].institutions[0].lineage	https://openalex.org/I20231570
authorships[3].institutions[0].country_code	CN
authorships[3].institutions[0].display_name	Peking University
authorships[3].author_position	middle
authorships[3].raw_author_name	Kuan‐Chang Chang
authorships[3].is_corresponding	False
authorships[3].raw_affiliation_strings	School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055 China
authorships[4].author.id	https://openalex.org/A5058354990
authorships[4].author.orcid	https://orcid.org/0000-0002-2106-691X
authorships[4].author.display_name	Tsung‐Ming Tsai
authorships[4].countries	TW
authorships[4].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[4].affiliations[0].raw_affiliation_string	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[4].institutions[0].id	https://openalex.org/I142974352
authorships[4].institutions[0].ror	https://ror.org/00mjawt10
authorships[4].institutions[0].type	education
authorships[4].institutions[0].lineage	https://openalex.org/I142974352
authorships[4].institutions[0].country_code	TW
authorships[4].institutions[0].display_name	National Sun Yat-sen University
authorships[4].author_position	middle
authorships[4].raw_author_name	Tsung‐Ming Tsai
authorships[4].is_corresponding	False
authorships[4].raw_affiliation_strings	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[5].author.id	https://openalex.org/A5006026128
authorships[5].author.orcid	https://orcid.org/0000-0001-5606-3009
authorships[5].author.display_name	Chih‐Cheng Shih
authorships[5].countries	TW
authorships[5].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[5].affiliations[0].raw_affiliation_string	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[5].institutions[0].id	https://openalex.org/I142974352
authorships[5].institutions[0].ror	https://ror.org/00mjawt10
authorships[5].institutions[0].type	education
authorships[5].institutions[0].lineage	https://openalex.org/I142974352
authorships[5].institutions[0].country_code	TW
authorships[5].institutions[0].display_name	National Sun Yat-sen University
authorships[5].author_position	middle
authorships[5].raw_author_name	Chih‐Cheng Shih
authorships[5].is_corresponding	False
authorships[5].raw_affiliation_strings	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[6].author.id	https://openalex.org/A5103229620
authorships[6].author.orcid	https://orcid.org/0000-0002-9695-0777
authorships[6].author.display_name	Hui‐Chun Huang
authorships[6].countries	TW
authorships[6].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[6].affiliations[0].raw_affiliation_string	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[6].institutions[0].id	https://openalex.org/I142974352
authorships[6].institutions[0].ror	https://ror.org/00mjawt10
authorships[6].institutions[0].type	education
authorships[6].institutions[0].lineage	https://openalex.org/I142974352
authorships[6].institutions[0].country_code	TW
authorships[6].institutions[0].display_name	National Sun Yat-sen University
authorships[6].author_position	middle
authorships[6].raw_author_name	Hui‐Chun Huang
authorships[6].is_corresponding	False
authorships[6].raw_affiliation_strings	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[7].author.id	https://openalex.org/A5103909866
authorships[7].author.orcid
authorships[7].author.display_name	Cheng‐Chi Yang
authorships[7].countries	TW
authorships[7].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[7].affiliations[0].raw_affiliation_string	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[7].institutions[0].id	https://openalex.org/I142974352
authorships[7].institutions[0].ror	https://ror.org/00mjawt10
authorships[7].institutions[0].type	education
authorships[7].institutions[0].lineage	https://openalex.org/I142974352
authorships[7].institutions[0].country_code	TW
authorships[7].institutions[0].display_name	National Sun Yat-sen University
authorships[7].author_position	middle
authorships[7].raw_author_name	Cheng‐Chi Yang
authorships[7].is_corresponding	False
authorships[7].raw_affiliation_strings	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[8].author.id	https://openalex.org/A5087964642
authorships[8].author.orcid	https://orcid.org/0000-0002-0401-8473
authorships[8].author.display_name	Chih‐Yang Lin
authorships[8].countries	TW
authorships[8].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[8].affiliations[0].raw_affiliation_string	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[8].institutions[0].id	https://openalex.org/I142974352
authorships[8].institutions[0].ror	https://ror.org/00mjawt10
authorships[8].institutions[0].type	education
authorships[8].institutions[0].lineage	https://openalex.org/I142974352
authorships[8].institutions[0].country_code	TW
authorships[8].institutions[0].display_name	National Sun Yat-sen University
authorships[8].author_position	middle
authorships[8].raw_author_name	Chih‐Yang Lin
authorships[8].is_corresponding	False
authorships[8].raw_affiliation_strings	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[9].author.id	https://openalex.org/A5109467088
authorships[9].author.orcid	https://orcid.org/0000-0002-0613-7214
authorships[9].author.display_name	Cheng‐Hsien Wu
authorships[9].countries	TW
authorships[9].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[9].affiliations[0].raw_affiliation_string	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[9].institutions[0].id	https://openalex.org/I142974352
authorships[9].institutions[0].ror	https://ror.org/00mjawt10
authorships[9].institutions[0].type	education
authorships[9].institutions[0].lineage	https://openalex.org/I142974352
authorships[9].institutions[0].country_code	TW
authorships[9].institutions[0].display_name	National Sun Yat-sen University
authorships[9].author_position	middle
authorships[9].raw_author_name	Cheng‐Hsien Wu
authorships[9].is_corresponding	False
authorships[9].raw_affiliation_strings	Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[10].author.id	https://openalex.org/A5067699683
authorships[10].author.orcid	https://orcid.org/0000-0003-3813-4170
authorships[10].author.display_name	Haimei Zheng
authorships[10].countries	TW
authorships[10].affiliations[0].institution_ids	https://openalex.org/I142974352
authorships[10].affiliations[0].raw_affiliation_string	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[10].institutions[0].id	https://openalex.org/I142974352
authorships[10].institutions[0].ror	https://ror.org/00mjawt10
authorships[10].institutions[0].type	education
authorships[10].institutions[0].lineage	https://openalex.org/I142974352
authorships[10].institutions[0].country_code	TW
authorships[10].institutions[0].display_name	National Sun Yat-sen University
authorships[10].author_position	middle
authorships[10].raw_author_name	Hao‐Xuan Zheng
authorships[10].is_corresponding	False
authorships[10].raw_affiliation_strings	Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan R. O. C.
authorships[11].author.id	https://openalex.org/A5021481432
authorships[11].author.orcid	https://orcid.org/0000-0002-1815-8661
authorships[11].author.display_name	Shengdong Zhang
authorships[11].countries	CN
authorships[11].affiliations[0].institution_ids	https://openalex.org/I20231570
authorships[11].affiliations[0].raw_affiliation_string	School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055 China
authorships[11].institutions[0].id	https://openalex.org/I20231570
authorships[11].institutions[0].ror	https://ror.org/02v51f717
authorships[11].institutions[0].type	education
authorships[11].institutions[0].lineage	https://openalex.org/I20231570
authorships[11].institutions[0].country_code	CN
authorships[11].institutions[0].display_name	Peking University
authorships[11].author_position	middle
authorships[11].raw_author_name	Shengdong Zhang
authorships[11].is_corresponding	False
authorships[11].raw_affiliation_strings	School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055 China
authorships[12].author.id	https://openalex.org/A5111637234
authorships[12].author.orcid
authorships[12].author.display_name	Simon M. Sze
authorships[12].countries	TW
authorships[12].affiliations[0].institution_ids	https://openalex.org/I148366613
authorships[12].affiliations[0].raw_affiliation_string	Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300 Taiwan R. O. C.
authorships[12].institutions[0].id	https://openalex.org/I148366613
authorships[12].institutions[0].ror	https://ror.org/00se2k293
authorships[12].institutions[0].type	education
authorships[12].institutions[0].lineage	https://openalex.org/I148366613
authorships[12].institutions[0].country_code	TW
authorships[12].institutions[0].display_name	National Yang Ming Chiao Tung University
authorships[12].author_position	last
authorships[12].raw_author_name	Simon M. Sze
authorships[12].is_corresponding	False
authorships[12].raw_affiliation_strings	Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300 Taiwan R. O. C.
has_content.pdf	True
has_content.grobid_xml	True
is_paratext	False
open_access.is_oa	True
open_access.oa_url	https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.201770041
open_access.oa_status	bronze
open_access.any_repository_has_fulltext	False
created_date	2025-10-10T00:00:00
display_name	Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure (Adv. Electron. Mater. 9/2017)
has_fulltext	False
is_retracted	False
updated_date	2025-11-06T03:46:38.306776
primary_topic.id	https://openalex.org/T10502
primary_topic.field.id	https://openalex.org/fields/22
primary_topic.field.display_name	Engineering
primary_topic.score	0.9921000003814697
primary_topic.domain.id	https://openalex.org/domains/3
primary_topic.domain.display_name	Physical Sciences
primary_topic.subfield.id	https://openalex.org/subfields/2208
primary_topic.subfield.display_name	Electrical and Electronic Engineering
primary_topic.display_name	Advanced Memory and Neural Computing
related_works	https://openalex.org/W2199653281, https://openalex.org/W2020622255, https://openalex.org/W2065076119, https://openalex.org/W4384616198, https://openalex.org/W2054635671, https://openalex.org/W4312727691, https://openalex.org/W2588373136, https://openalex.org/W2791102142, https://openalex.org/W4405522369, https://openalex.org/W2088897617
cited_by_count	0
locations_count	1
best_oa_location.id	doi:10.1002/aelm.201770041
best_oa_location.is_oa	True
best_oa_location.source.id	https://openalex.org/S2765003236
best_oa_location.source.issn	2199-160X
best_oa_location.source.type	journal
best_oa_location.source.is_oa	False
best_oa_location.source.issn_l	2199-160X
best_oa_location.source.is_core	True
best_oa_location.source.is_in_doaj	True
best_oa_location.source.display_name	Advanced Electronic Materials
best_oa_location.source.host_organization	https://openalex.org/P4310320595
best_oa_location.source.host_organization_name	Wiley
best_oa_location.source.host_organization_lineage	https://openalex.org/P4310320595
best_oa_location.source.host_organization_lineage_names	Wiley
best_oa_location.license
best_oa_location.pdf_url	https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.201770041
best_oa_location.version	publishedVersion
best_oa_location.raw_type	journal-article
best_oa_location.license_id
best_oa_location.is_accepted	True
best_oa_location.is_published	True
best_oa_location.raw_source_name	Advanced Electronic Materials
best_oa_location.landing_page_url	https://doi.org/10.1002/aelm.201770041
primary_location.id	doi:10.1002/aelm.201770041
primary_location.is_oa	True
primary_location.source.id	https://openalex.org/S2765003236
primary_location.source.issn	2199-160X
primary_location.source.type	journal
primary_location.source.is_oa	False
primary_location.source.issn_l	2199-160X
primary_location.source.is_core	True
primary_location.source.is_in_doaj	True
primary_location.source.display_name	Advanced Electronic Materials
primary_location.source.host_organization	https://openalex.org/P4310320595
primary_location.source.host_organization_name	Wiley
primary_location.source.host_organization_lineage	https://openalex.org/P4310320595
primary_location.source.host_organization_lineage_names	Wiley
primary_location.license
primary_location.pdf_url	https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.201770041
primary_location.version	publishedVersion
primary_location.raw_type	journal-article
primary_location.license_id
primary_location.is_accepted	True
primary_location.is_published	True
primary_location.raw_source_name	Advanced Electronic Materials
primary_location.landing_page_url	https://doi.org/10.1002/aelm.201770041
publication_date	2017-09-01
publication_year	2017
referenced_works_count	0
abstract_inverted_index.A	0
abstract_inverted_index.a	69
abstract_inverted_index.As	28
abstract_inverted_index.as	23
abstract_inverted_index.by	17, 30, 54
abstract_inverted_index.in	37
abstract_inverted_index.is	14
abstract_inverted_index.The	59
abstract_inverted_index.and	35, 45
abstract_inverted_index.new	19
abstract_inverted_index.the	24, 49, 51, 55, 65
abstract_inverted_index.both	41
abstract_inverted_index.show	64
abstract_inverted_index.with	5, 68
abstract_inverted_index.cells	13
abstract_inverted_index.cross	60
abstract_inverted_index.field	44, 53
abstract_inverted_index.issue	4
abstract_inverted_index.views	62
abstract_inverted_index.(RRAM)	11
abstract_inverted_index.Chang,	32, 34
abstract_inverted_index.access	9
abstract_inverted_index.device	12
abstract_inverted_index.high-k	57
abstract_inverted_index.memory	10
abstract_inverted_index.number	39
abstract_inverted_index.random	8
abstract_inverted_index.rising	1
abstract_inverted_index.solved	16
abstract_inverted_index.spacer	26
abstract_inverted_index.article	38
abstract_inverted_index.clearly	63
abstract_inverted_index.confirm	48
abstract_inverted_index.forming	2
abstract_inverted_index.section	61
abstract_inverted_index.spacer.	58, 70
abstract_inverted_index.voltage	3
abstract_inverted_index.(high-k)	21
abstract_inverted_index.1700171,	40
abstract_inverted_index.confined	50
abstract_inverted_index.material	22
abstract_inverted_index.reported	29
abstract_inverted_index.different	66
abstract_inverted_index.resistive	7
abstract_inverted_index.side-wall	25
abstract_inverted_index.Kuan-Chang	33
abstract_inverted_index.Ting-Chang	31
abstract_inverted_index.co-workers	36
abstract_inverted_index.electrical	43, 46, 52
abstract_inverted_index.structure.	27
abstract_inverted_index.structures	67
abstract_inverted_index.surrounded	56
abstract_inverted_index.introducing	18
abstract_inverted_index.measurements	47
abstract_inverted_index.scaling-down	6
abstract_inverted_index.successfully	15
abstract_inverted_index.COMSOL-simulated	42
abstract_inverted_index.high-permittivity	20
cited_by_percentile_year
countries_distinct_count	2
institutions_distinct_count	13
sustainable_development_goals[0].id	https://metadata.un.org/sdg/7
sustainable_development_goals[0].score	0.6200000047683716
sustainable_development_goals[0].display_name	Affordable and clean energy
citation_normalized_percentile.value	0.11377481
citation_normalized_percentile.is_in_top_1_percent	False
citation_normalized_percentile.is_in_top_10_percent	False