Resistive switching behavior and mechanism of HfO x films with large on/off ratio by structure design Article Swipe
YOU?
·
· 2023
· Open Access
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· DOI: https://doi.org/10.1088/1674-1056/ad053a
Different bilayer structures of HfO x /Ti(TiO x ) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy, and the oxygen vacancies are analyzed. Highly improved on/off ratio (∼10 4 ) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO x sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO x -based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.
Related Topics
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1088/1674-1056/ad053a
- OA Status
- hybrid
- Cited By
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- OpenAlex ID
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Raw OpenAlex JSON
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https://openalex.org/W4387820809Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1088/1674-1056/ad053aDigital Object Identifier
- Title
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Resistive switching behavior and mechanism of HfO x films with large on/off ratio by structure designWork title
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2023Year of publication
- Publication date
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2023-10-20Full publication date if available
- Authors
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Xianglin Huang, Ying Wang, Huixiang Huang, Li Duan, Tingting GuoList of authors in order
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https://doi.org/10.1088/1674-1056/ad053aPublisher landing page
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YesWhether a free full text is available
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hybridOpen access status per OpenAlex
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https://doi.org/10.1088/1674-1056/ad053aDirect OA link when available
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Mechanism (biology), Materials science, Resistive touchscreen, Optoelectronics, Engineering physics, Electrical engineering, Physics, Engineering, Quantum mechanicsTop concepts (fields/topics) attached by OpenAlex
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1Total citation count in OpenAlex
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2025: 1Per-year citation counts (last 5 years)
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10Other works algorithmically related by OpenAlex
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| referenced_works | https://openalex.org/W4241869084, https://openalex.org/W4280643523, https://openalex.org/W3028924052, https://openalex.org/W2588800929, https://openalex.org/W3148168556, https://openalex.org/W2767248126, https://openalex.org/W2002513213, https://openalex.org/W2281718535, https://openalex.org/W1983385007, https://openalex.org/W2794684839, https://openalex.org/W2401447575, https://openalex.org/W2800144579, https://openalex.org/W2726673344, https://openalex.org/W2662553141, https://openalex.org/W3038537572, https://openalex.org/W2008012203, https://openalex.org/W2317554828, https://openalex.org/W2018433768, https://openalex.org/W2010221926, https://openalex.org/W1973350439, https://openalex.org/W2409231545, https://openalex.org/W1985408179, https://openalex.org/W2098547240, https://openalex.org/W2612613850, https://openalex.org/W3081037494, https://openalex.org/W1998631300, https://openalex.org/W1994176416, https://openalex.org/W2621033350, https://openalex.org/W3172918678, https://openalex.org/W2610052859, https://openalex.org/W2515179975, https://openalex.org/W1482843268, https://openalex.org/W2564136356, https://openalex.org/W2041933547 |
| referenced_works_count | 34 |
| abstract_inverted_index.) | 8, 47 |
| abstract_inverted_index.4 | 46 |
| abstract_inverted_index.a | 117 |
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| abstract_inverted_index.height. | 156 |
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| abstract_inverted_index.results | 170 |
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| abstract_inverted_index.sample, | 64 |
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| abstract_inverted_index.photoelectron | 33 |
| abstract_inverted_index.spectroscopy, | 34 |
| abstract_inverted_index.characteristics. | 18 |
| cited_by_percentile_year.max | 95 |
| cited_by_percentile_year.min | 91 |
| corresponding_author_ids | https://openalex.org/A5101988668 |
| countries_distinct_count | 2 |
| institutions_distinct_count | 5 |
| corresponding_institution_ids | https://openalex.org/I25355098, https://openalex.org/I4210129794 |
| citation_normalized_percentile.value | 0.48798722 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |