Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss Article Swipe
Zhixuan Wang
,
Xiangdong Sun
,
Biying Ren
,
Zechi Chen
·
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1016/j.egyr.2023.05.191
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1016/j.egyr.2023.05.191
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz. In this case, the driving loss of transistors becomes one of the important reasons that affect the entire conversion efficiency of the system. p-doped GaN (p-GaN) as a new GaN HEMT structure has achieved commercial success in recent years, but due to its special structure, traditional resonant driving schemes designed for Si-MOSFETs have poor applicability to p-GaN HEMTs. Therefore, according to the structure characteristics and the driving requirements of p-GaN HEMTs, an improved resonant driving scheme is proposed. In the proposed driving scheme, the gate charge energy is recycled to the resonant capacitor when the p-GaN HEMT is turned off, and released when it is turned on, thus reducing the driving power loss. The working principle of the driving circuit and the design method of component parameters are given in this paper. The experimental results show that for high-frequency applications with switching frequencies exceeding several megahertz, the power loss of the proposed resonant driving scheme is significantly lower than that of non-resonant driving scheme, which verifies the effectiveness and feasibility of the proposed scheme.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1016/j.egyr.2023.05.191
- OA Status
- gold
- Cited By
- 1
- References
- 21
- Related Works
- 10
- OpenAlex ID
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All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4378894925Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1016/j.egyr.2023.05.191Digital Object Identifier
- Title
-
Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power lossWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2023Year of publication
- Publication date
-
2023-05-31Full publication date if available
- Authors
-
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi ChenList of authors in order
- Landing page
-
https://doi.org/10.1016/j.egyr.2023.05.191Publisher landing page
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YesWhether a free full text is available
- OA status
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goldOpen access status per OpenAlex
- OA URL
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https://doi.org/10.1016/j.egyr.2023.05.191Direct OA link when available
- Concepts
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High-electron-mobility transistor, Gallium nitride, Transistor, Materials science, Optoelectronics, Capacitor, Power (physics), Power semiconductor device, Power electronics, Electrical engineering, Voltage, Engineering, Physics, Nanotechnology, Quantum mechanics, Layer (electronics)Top concepts (fields/topics) attached by OpenAlex
- Cited by
-
1Total citation count in OpenAlex
- Citations by year (recent)
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2025: 1Per-year citation counts (last 5 years)
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21Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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