Roadmap of Ferroelectric Memories: From Discovery to 3D Integration Article Swipe

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Ferroelectricity Neuromorphic engineering Materials science Transistor Non-volatile memory Bridging (networking) Optoelectronics Chip Ferroelectric RAM Static random-access memory Computer science Nanotechnology Electrical engineering Computer hardware Engineering Voltage Dielectric Computer network Artificial neural network Machine learning

Sourav De , Maximilian Lederer , Yannick Raffel , Franz Mȕller , David Lehninger , Ayse Sünbül , Stefan Duenkel , Tarek Ali , Halid Mulaosmanovic , Aftab Baig , Bhaswar Chakrabarti , Sven Beyer , Tian‐Li Wu , Johannes Mueller , Darsen D. Lu , Konrad Seidel , Thomas Kaempfe ·

YOU? · · 2023 · Open Access · · DOI: https://doi.org/10.36227/techrxiv.23573523.v1 · OA: W4382404324

<p>The versatility of hafnium oxide-based ferroelectric memories to function as a storage class memory, a synaptic device for neuromorphic implementation, and a device capable of high-density integration have made them attractive candidates for next-generation technology. Ferroelectric memories have been increasingly popular with the discovery of ferroelectricity in hafnium oxide at a shallow thickness and compatibility with complementary metal-oxide-semiconductor-compatible processes. The single transistor-based ferroelectric cell makes them ideal for non-volatile embedded memory solutions, bridging the gap between on-chip SRAM and external data storage (e.g. Flash). This paper begins with discovering ferroelectricity in Rochelle salt and discusses the neoteric progress up to successful integration with 3D memory.</p>