Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors. Article Swipe
Mari Napari
,
Tahmida N. Huq
,
David J. Meeth
,
Mikko Heikkilä
,
Kham M. Niang
,
Han Wang
,
Tomi Iivonen
,
Haiyan Wang
,
Markku Leskelä
,
Mikko Ritala
,
Andrew J. Flewitt
,
Robert L. Z. Hoye
,
Judith L. MacManus-Driscol
·
YOU?
·
· 2021
· Open Access
·
· DOI: https://doi.org/10.17863/cam.62891
YOU?
·
· 2021
· Open Access
·
· DOI: https://doi.org/10.17863/cam.62891
High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a thin ALD Al2O3 passivation layer on the Cu2O channel, followed by vacuum annealing at 300 °C. Detailed characterization by transmission electron microscopy-energy dispersive X-ray analysis and X-ray photoelectron spectroscopy shows that the surface of Cu2O is reduced following Al2O3 deposition and indicates the formation of a 1-2 nm thick CuAlO2 interfacial layer. This, together with field-effect passivation caused by the high negative fixed charge of the ALD Al2O3, leads to an improvement in the TFT performance by reducing the density of deep trap states as well as by reducing the accumulation of electrons in the semiconducting layer in the device off-state.
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Metadata
- Type
- preprint
- Language
- en
- Landing Page
- http://arxiv.org/abs/2010.10928
- https://arxiv.org/pdf/2010.10928
- OA Status
- green
- References
- 33
- Related Works
- 20
- OpenAlex ID
- https://openalex.org/W3094322886
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W3094322886Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.17863/cam.62891Digital Object Identifier
- Title
-
Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors.Work title
- Type
-
preprintOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2021Year of publication
- Publication date
-
2021-01-06Full publication date if available
- Authors
-
Mari Napari, Tahmida N. Huq, David J. Meeth, Mikko Heikkilä, Kham M. Niang, Han Wang, Tomi Iivonen, Haiyan Wang, Markku Leskelä, Mikko Ritala, Andrew J. Flewitt, Robert L. Z. Hoye, Judith L. MacManus-DriscolList of authors in order
- Landing page
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https://arxiv.org/abs/2010.10928Publisher landing page
- PDF URL
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https://arxiv.org/pdf/2010.10928Direct link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- OA URL
-
https://arxiv.org/pdf/2010.10928Direct OA link when available
- Concepts
-
Passivation, Thin-film transistor, Atomic layer deposition, Materials science, Optoelectronics, Annealing (glass), X-ray photoelectron spectroscopy, Semiconductor, Transistor, Layer (electronics), Thin film, Field effect, Nanotechnology, Electrical engineering, Metallurgy, Chemical engineering, Voltage, EngineeringTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
0Total citation count in OpenAlex
- References (count)
-
33Number of works referenced by this work
- Related works (count)
-
20Other works algorithmically related by OpenAlex
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