Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics Article Swipe
YOU?
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· 2025
· Open Access
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· DOI: https://doi.org/10.3390/s25020571
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters’ (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques. This paper proposes a high-efficiency datasheet-driven method for sensorless estimation utilizing the third-quadrant characteristics of MOSFETs. Without changing the existing hardware, the closure degree of MOS channels is controlled through a dual-gate bias (DGB) strategy to achieve reverse conduction in different patterns with body diodes. This method introduces a MOSFET operating current that TSEPs are equally sensitive to into the two-argument function, improving the complexity and accuracy. A two-stage current pulse is used to decouple the motor effect in various conduction modes, and the TSEP-combined temperature function is built dynamically by substituting the currents. Then, the junction temperature is estimated by the measured bus voltage and current. Its effectiveness was verified through spice model simulation and a test bench with a three-phase inverter. The average relative estimation error of the proposed method is below 7.2% in centigrade.
Related Topics
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.3390/s25020571
- https://www.mdpi.com/1424-8220/25/2/571/pdf?version=1737355148
- OA Status
- gold
- Cited By
- 2
- References
- 31
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4406616067
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4406616067Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.3390/s25020571Digital Object Identifier
- Title
-
Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant CharacteristicsWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2025Year of publication
- Publication date
-
2025-01-20Full publication date if available
- Authors
-
Yansong Lu, Yuting Ding, Jia Li, Hao Yin, Xinlian Li, Chong Zhu, Xi ZhangList of authors in order
- Landing page
-
https://doi.org/10.3390/s25020571Publisher landing page
- PDF URL
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https://www.mdpi.com/1424-8220/25/2/571/pdf?version=1737355148Direct link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
-
https://www.mdpi.com/1424-8220/25/2/571/pdf?version=1737355148Direct OA link when available
- Concepts
-
Inverter, MOSFET, JFET, Junction temperature, Transistor, Silicon carbide, Diode, Electronic engineering, Datasheet, Computer science, Materials science, Voltage, Electrical engineering, Control theory (sociology), Thermal, Field-effect transistor, Engineering, Optoelectronics, Physics, Control (management), Artificial intelligence, Metallurgy, MeteorologyTop concepts (fields/topics) attached by OpenAlex
- Cited by
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2Total citation count in OpenAlex
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2025: 2Per-year citation counts (last 5 years)
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31Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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