Si CMOS platform for quantum information processing Article Swipe
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Louis Hutin
,
Romain Maurand
,
Dharmraj Kotekar‐Patil
,
Andrea Corna
,
Heorhii Bohuslavskyi
,
X. Jehl
,
Sylvain Barraud
,
S. De Franceschi
,
M. Sanquer
,
M. Vinet
·
YOU?
·
· 2016
· Open Access
·
· DOI: https://doi.org/10.1109/vlsit.2016.7573380
· OA: W2525354786
YOU?
·
· 2016
· Open Access
·
· DOI: https://doi.org/10.1109/vlsit.2016.7573380
· OA: W2525354786
We report the first quantum bit device implemented on a foundry-compatible Si\nCMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is\nin essence a compact two-gate pFET. The qubit is encoded in the spin degree of\nfreedom of a hole Quantum Dot defined by one of the Gates. Coherent spin\nmanipulation is performed by means of an RF E-Field signal applied to the Gate\nitself.\n
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