Silicon diffusion in AlN Article Swipe
Valeria Bonito Oliva
,
D. Mangelinck
,
Sylvia Hagedorn
,
H. Bracht
,
K. Irmscher
,
C. Hartmann
,
P. Vennéguès
,
M. Albrecht
·
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1063/5.0159641
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1063/5.0159641
In this study, we investigate the diffusion of Si donors in AlN. Amorphous Si1−xNx sputtered on the surface of bulk AlN with low dislocation density is used as a Si source. The diffusion experiments are conducted through isochronal and isothermal annealing in a protective N2 atmosphere at temperatures between 1500 and 1700 °C. The Si depth profiles measured by secondary ion mass spectrometry exhibit a convex box-like shape with a steep diffusion front. These concentration profiles are best described with a diffusion coefficient that depends on the square of local Si concentration. From the characteristic box-shaped Si profiles, we conclude that diffusion of Si in AlN is mediated by singly negatively charged dopant–vacancy pairs SiAlVAl−. The strong concentration dependence of Si diffusion is due to the electric field associated with the incorporation of Si donors (SiAl+1) on substitutional Al lattice sites and reflects that Si is fully electrically active at diffusion temperature. The experimentally obtained extrinsic Si diffusion coefficient is reduced to intrinsic doping conditions. The temperature dependence of Si diffusion for intrinsic conditions is described by an activation enthalpy of (10.34±0.32)eV and a pre-exponential factor of 235−203+1485cm2s−1. The migration enthalpy of the donor–vacancy pair SiAlVAl− is estimated to be around 3.5 eV. This estimation is based on the activation enthalpy of the transport capacity of SiAlVAl− and theoretical results concerning the formation energy of negatively charged vacancies on Al-sites in AlN.
Related Topics
Concepts
Enthalpy
Vacancy defect
Annealing (glass)
Diffusion
Materials science
Silicon
Effective diffusion coefficient
Lattice diffusion coefficient
Dopant
Activation energy
Doping
Analytical Chemistry (journal)
Amorphous solid
Grain boundary diffusion coefficient
Chemistry
Crystallography
Thermodynamics
Physical chemistry
Metallurgy
Grain boundary
Chromatography
Physics
Medicine
Radiology
Optoelectronics
Magnetic resonance imaging
Microstructure
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1063/5.0159641
- https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0159641/18112959/095103_1_5.0159641.pdf
- OA Status
- hybrid
- Cited By
- 5
- References
- 25
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4386477140
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4386477140Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1063/5.0159641Digital Object Identifier
- Title
-
Silicon diffusion in AlNWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2023Year of publication
- Publication date
-
2023-09-06Full publication date if available
- Authors
-
Valeria Bonito Oliva, D. Mangelinck, Sylvia Hagedorn, H. Bracht, K. Irmscher, C. Hartmann, P. Vennéguès, M. AlbrechtList of authors in order
- Landing page
-
https://doi.org/10.1063/5.0159641Publisher landing page
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https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0159641/18112959/095103_1_5.0159641.pdfDirect link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
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hybridOpen access status per OpenAlex
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https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0159641/18112959/095103_1_5.0159641.pdfDirect OA link when available
- Concepts
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Enthalpy, Vacancy defect, Annealing (glass), Diffusion, Materials science, Silicon, Effective diffusion coefficient, Lattice diffusion coefficient, Dopant, Activation energy, Doping, Analytical Chemistry (journal), Amorphous solid, Grain boundary diffusion coefficient, Chemistry, Crystallography, Thermodynamics, Physical chemistry, Metallurgy, Grain boundary, Chromatography, Physics, Medicine, Radiology, Optoelectronics, Magnetic resonance imaging, MicrostructureTop concepts (fields/topics) attached by OpenAlex
- Cited by
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5Total citation count in OpenAlex
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2025: 4, 2024: 1Per-year citation counts (last 5 years)
- References (count)
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25Number of works referenced by this work
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10Other works algorithmically related by OpenAlex
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