Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer Article Swipe
Xiao Wang
,
Zhiyu Lin
,
Yumin Zhang
,
Jianfeng Wang
,
Ke Xu
·
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1063/5.0153570
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1063/5.0153570
The C-doped P-gate-enhanced HEMT (PEHEMT) is simulated by using the Silvaco T-CAD tool. The interaction among the C acceptor trap, electron, and hole in the buffer layer at different voltages promotes interesting electrical characteristic within the device. In off-state conditions, the peak electric field position shifts from the edge of gate to the edge of drain. During the process of peak electric field transfer, the gate electric field gradually saturates, and the increase rate of peak electric field shows a turning point at 350 V (Vd < 600 V). As the voltage further increases (Vd > 600 V), the increase rate of the drain electric field gradually slows down and tends to saturation, and the corresponding saturated gate electric field begins to increase. The uniform, quasi-linear, and step distributions of three different C acceptor in the buffer layer exhibit different degrees of current collapse under 1 ms bias stress, with values of 21.8%, 12.7%, and 12.8%, respectively. In this work, we have provided appropriate explanations for the above phenomena.
Related Topics
Concepts
Electric field
High-electron-mobility transistor
Materials science
Acceptor
Doping
Saturation (graph theory)
Voltage
Analytical Chemistry (journal)
Optoelectronics
Condensed matter physics
Transistor
Electrical engineering
Chemistry
Physics
Chromatography
Engineering
Quantum mechanics
Combinatorics
Mathematics
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1063/5.0153570
- OA Status
- gold
- Cited By
- 2
- References
- 22
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4386475285
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4386475285Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1063/5.0153570Digital Object Identifier
- Title
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Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layerWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
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2023Year of publication
- Publication date
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2023-09-01Full publication date if available
- Authors
-
Xiao Wang, Zhiyu Lin, Yumin Zhang, Jianfeng Wang, Ke XuList of authors in order
- Landing page
-
https://doi.org/10.1063/5.0153570Publisher landing page
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
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https://doi.org/10.1063/5.0153570Direct OA link when available
- Concepts
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Electric field, High-electron-mobility transistor, Materials science, Acceptor, Doping, Saturation (graph theory), Voltage, Analytical Chemistry (journal), Optoelectronics, Condensed matter physics, Transistor, Electrical engineering, Chemistry, Physics, Chromatography, Engineering, Quantum mechanics, Combinatorics, MathematicsTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
2Total citation count in OpenAlex
- Citations by year (recent)
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2024: 2Per-year citation counts (last 5 years)
- References (count)
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- Related works (count)
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10Other works algorithmically related by OpenAlex
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