Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron–hole bilayer Article Swipe
Xue-Ke Wang
,
Yabin Sun
,
Ziyu Liu
,
Yun Liu
,
Xiaojin Li
,
Yanling Shi
·
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1088/1674-1056/ac9180
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1088/1674-1056/ac9180
The single event transient (SET) effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer (EHBNT-TFET) is investigated by 3-D TCAD simulation for the first time. The effects of linear energy transfer (LET), characteristic radius, strike angle, electrode bias and hit location on SET response are evaluated in detail. The simulation results show that the peak value of transient drain current is up to 0.08 mA for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 MeV⋅cm 2 /mg, which is much higher than the on-state current of EHBNT-TFET. The SET response of EHBNT-TFET presents an obvious dependence on LET, strike angle, drain bias and hit location. As LET increases from 2 MeV⋅cm 2 /mg to 10 MeV⋅cm 2 /mg, the peak drain current increases monotonically from 0.015 mA to 0.08 mA. The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius. The peak drain current and collected charge increase by 0.014 mA and 0.06 fC, respectively, as the drain bias increases from 0.1 V to 0.9 V. Whether from the horizontal or the vertical direction, the most sensitive hit location is related to w t . The underlying physical mechanism is explored and discussed.
Related Topics
Concepts
RADIUS
Quantum tunnelling
Materials science
Transient (computer programming)
Transistor
Electron
Atomic physics
Condensed matter physics
Current (fluid)
Electrode
Irradiation
Physics
Molecular physics
Voltage
Nuclear physics
Computer security
Thermodynamics
Quantum mechanics
Operating system
Computer science
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1088/1674-1056/ac9180
- OA Status
- hybrid
- Cited By
- 1
- References
- 27
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4295884761
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4295884761Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1088/1674-1056/ac9180Digital Object Identifier
- Title
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Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron–hole bilayerWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2022Year of publication
- Publication date
-
2022-09-13Full publication date if available
- Authors
-
Xue-Ke Wang, Yabin Sun, Ziyu Liu, Yun Liu, Xiaojin Li, Yanling ShiList of authors in order
- Landing page
-
https://doi.org/10.1088/1674-1056/ac9180Publisher landing page
- Open access
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YesWhether a free full text is available
- OA status
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hybridOpen access status per OpenAlex
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https://doi.org/10.1088/1674-1056/ac9180Direct OA link when available
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RADIUS, Quantum tunnelling, Materials science, Transient (computer programming), Transistor, Electron, Atomic physics, Condensed matter physics, Current (fluid), Electrode, Irradiation, Physics, Molecular physics, Voltage, Nuclear physics, Computer security, Thermodynamics, Quantum mechanics, Operating system, Computer scienceTop concepts (fields/topics) attached by OpenAlex
- Cited by
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1Total citation count in OpenAlex
- Citations by year (recent)
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2025: 1Per-year citation counts (last 5 years)
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27Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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