Solution Processed Low Voltage Metal-Oxide transistor by using TiO2 /Li-Al2O3 stacked Gate Dielectric Article Swipe

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Nila Pal , Utkarsh Pandey , Sajal Biring , Bhola Nath Pal ·

YOU? · · 2021 · Open Access · · DOI: https://doi.org/10.21203/rs.3.rs-350224/v1

A solution processed top-contact bottom gated SnO₂ thin-film transistor (TFT) has been fabricated by using a TiO₂/ Li-Al₂O₃ bilayer stacked gate dielectric that show operating voltage of this TFT within 2.0 V. It is observed that the bilayer dielectric has much higher areal capacitance with lower leakage current density that significantly improve the overall device performance of TFT. The TFT with bilayer gate dielectric shows an effective carrier mobility (µ_sat) of 9.2 cm²V^{− 1}s^{− 1} with an on/off ratio of 7.1x10³ which are significantly higher with respect to the TFT with a single layer Li-Al₂O₃ gate dielectric. The origin of this improvement is due to the Schottky junction between the highly doped silicon (p⁺⁺-Si) and TiO₂ of bilayer stacked dielectric that induced electrons to the channel which reduces the dielectric/semiconductor interface trap state. This investigation opens a new path to develop TFT device performance using a suitable bilayer stack of gate-dielectric.

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Electrical Engineering

Metallurgy

Engineering

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Gate dielectric Materials science Dielectric Gate oxide Metal gate Optoelectronics Oxide Transistor Metal Voltage Electrical engineering High-κ dielectric Metallurgy Engineering

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Type: preprint
Language: en
Landing Page: https://doi.org/10.21203/rs.3.rs-350224/v1
PDF: https://www.researchsquare.com/article/rs-350224/latest.pdf
OA Status: gold
Cited By: 1
References: 14
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DOI: https://doi.org/10.21203/rs.3.rs-350224/v1

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Title: Solution Processed Low Voltage Metal-Oxide transistor by using TiO2 /Li-Al2O3 stacked Gate Dielectric

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Type: preprint

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Language: en

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Publication year: 2021

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Publication date: 2021-05-11

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Authors: Nila Pal, Utkarsh Pandey, Sajal Biring, Bhola Nath Pal

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Landing page: https://doi.org/10.21203/rs.3.rs-350224/v1

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Concepts: Gate dielectric, Materials science, Dielectric, Gate oxide, Metal gate, Optoelectronics, Oxide, Transistor, Metal, Voltage, Electrical engineering, High-κ dielectric, Metallurgy, Engineering

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Cited by: 1

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abstract_inverted_index.7.1x10<sup>3</sup>	81
abstract_inverted_index.(p<sup>++</sup>-Si)	114
abstract_inverted_index.<title>Abstract</title>	0
abstract_inverted_index.cm<sup>2</sup>V<sup>−	73
abstract_inverted_index.dielectric/semiconductor	130
abstract_inverted_index.Li-Al<sub>2</sub>O<sub>3</sub>	18, 95
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sustainable_development_goals[0].id	https://metadata.un.org/sdg/7
sustainable_development_goals[0].score	0.8299999833106995
sustainable_development_goals[0].display_name	Affordable and clean energy
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