Stability of spin XOR gate operation in silicon based lateral spin device with large variations in spin transport parameters Article Swipe
Ryoma Ishihara
,
Soobeom Lee
,
Yuichiro Ando
,
Ryo Ohshima
,
Minori Goto
,
Shinji Miwa
,
Yoshishige Suzuki
,
Hayato Koike
,
Masashi Shiraishi
·
YOU?
·
· 2019
· Open Access
·
· DOI: https://doi.org/10.1063/1.5129980
YOU?
·
· 2019
· Open Access
·
· DOI: https://doi.org/10.1063/1.5129980
We investigate stability of the spin exclusive or (XOR) gate operation in silicon(Si) -based lateral spin devices whose spin transport properties have large variations. The optimum charge current, I0, for the spin XOR gate operation is calculated by using the one dimensional spin-drift-diffusion model with variable spin polarization, interface resistance of the ferromagnetic contact, channel length and channel conductivity. I0 is strongly modulated by changing the spin transport parameters particularly under the condition with small spin polarization and short channel length. In contrast, I0 shows constant value irrespective of the interface resistance of one ferromagnetic contact under spin extraction condition. Our results provide a device design guideline for the robust spin XOR gate operation.
Related Topics
Concepts
Spin polarization
Condensed matter physics
Spin diffusion
XOR gate
Spin (aerodynamics)
Spin pumping
AND gate
Spinplasmonics
Ferromagnetism
Contact resistance
Materials science
Silicon
Spin Hall effect
Spintronics
Logic gate
Physics
Optoelectronics
Nanotechnology
Electronic engineering
Electron
Quantum mechanics
Engineering
Thermodynamics
Layer (electronics)
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1063/1.5129980
- OA Status
- gold
- Cited By
- 3
- References
- 22
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2997289039
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W2997289039Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1063/1.5129980Digital Object Identifier
- Title
-
Stability of spin XOR gate operation in silicon based lateral spin device with large variations in spin transport parametersWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
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2019Year of publication
- Publication date
-
2019-12-01Full publication date if available
- Authors
-
Ryoma Ishihara, Soobeom Lee, Yuichiro Ando, Ryo Ohshima, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, Masashi ShiraishiList of authors in order
- Landing page
-
https://doi.org/10.1063/1.5129980Publisher landing page
- Open access
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YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
-
https://doi.org/10.1063/1.5129980Direct OA link when available
- Concepts
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Spin polarization, Condensed matter physics, Spin diffusion, XOR gate, Spin (aerodynamics), Spin pumping, AND gate, Spinplasmonics, Ferromagnetism, Contact resistance, Materials science, Silicon, Spin Hall effect, Spintronics, Logic gate, Physics, Optoelectronics, Nanotechnology, Electronic engineering, Electron, Quantum mechanics, Engineering, Thermodynamics, Layer (electronics)Top concepts (fields/topics) attached by OpenAlex
- Cited by
-
3Total citation count in OpenAlex
- Citations by year (recent)
-
2021: 1, 2020: 2Per-year citation counts (last 5 years)
- References (count)
-
22Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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