Strain-dependent grain boundary properties of n-type germanium layers Article Swipe
Kota Igura
,
Koki Nozawa
,
Takamitsu Ishiyama
,
Takashi Suemasu
,
Kaoru Toko
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1038/s41598-024-56282-0
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1038/s41598-024-56282-0
Polycrystalline Ge thin films have attracted considerable attention as potential materials for use in various electronic and optical devices. We recently developed a low-temperature solid-phase crystallization technology for a doped Ge layer and achieved the highest electron mobility in a polycrystalline Ge thin film. In this study, we investigated the effects of strain on the crystalline and electrical properties of n-type polycrystalline Ge layers. By inserting a GeO x interlayer directly under Ge and selecting substrates with different coefficients of thermal expansion, we modulated the strain in the polycrystalline Ge layer, ranging from approximately 0.6% (tensile) to − 0.8% (compressive). Compressive strain enlarged the grain size to 12 µm, but decreased the electron mobility. The temperature dependence of the electron mobility clarified that changes in the potential barrier height of the grain boundary caused this behavior. Furthermore, we revealed that the behavior of the grain boundary barrier height with respect to strain is opposite for the n- and p-types. This result strongly suggests that this phenomenon is due to the piezoelectric effect. These discoveries will provide guidelines for improving the performance of Ge devices and useful physical knowledge of various polycrystalline semiconductor thin films.
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Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1038/s41598-024-56282-0
- https://www.nature.com/articles/s41598-024-56282-0.pdf
- OA Status
- gold
- Cited By
- 4
- References
- 53
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4393867889
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4393867889Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1038/s41598-024-56282-0Digital Object Identifier
- Title
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Strain-dependent grain boundary properties of n-type germanium layersWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
-
2024Year of publication
- Publication date
-
2024-04-03Full publication date if available
- Authors
-
Kota Igura, Koki Nozawa, Takamitsu Ishiyama, Takashi Suemasu, Kaoru TokoList of authors in order
- Landing page
-
https://doi.org/10.1038/s41598-024-56282-0Publisher landing page
- PDF URL
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https://www.nature.com/articles/s41598-024-56282-0.pdfDirect link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
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https://www.nature.com/articles/s41598-024-56282-0.pdfDirect OA link when available
- Concepts
-
Crystallite, Materials science, Grain boundary, Germanium, Electron mobility, Crystallization, Thin film, Grain size, Ultimate tensile strength, Condensed matter physics, Composite material, Crystallography, Optoelectronics, Nanotechnology, Microstructure, Metallurgy, Chemistry, Silicon, Physics, Organic chemistryTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
4Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 3, 2024: 1Per-year citation counts (last 5 years)
- References (count)
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53Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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