Structural properties of MBE-grown CdTe (133)B buffer layers on GaAs (211)B substrates with CdZnTe/CdTe superlattice-based dislocation filtering layers Article Swipe
Wenwu Pan
,
Shuo Ma
,
Xiao Sun
,
Shimul Kanti Nath
,
Songqing Zhang
,
Renjie Gu
,
Zekai Zhang
,
L. Faraone
,
Wen Lei
·
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1063/5.0143854
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1063/5.0143854
The ever-present demand for high-performance HgCdTe infrared detectors with larger array size and lower cost than currently available technologies based on lattice-matched CdZnTe (211)B substrates has fuelled research into heteroepitaxial growth of HgCdTe and CdTe buffer layers on lattice-mismatched alternative substrates with a (211)B orientation. Driven by the large lattice mismatch, the heteroepitaxial growth of (Hg)CdTe can result in (133)B-orientated material, which, however, has been less explored in comparison to (211)B-oriented growth. Herein, we report on the structural properties of heteroepitaxially grown single-crystal II–VI CdTe (133)B-oriented buffer layers on III–V GaAs (211)B substrates. Azimuthal-dependent x-ray double-crystal rocking curve measurements for the CdTe buffer layers show that the full-width at half-maximum value obtained along the GaAs [1¯11] direction is narrower than that obtained along the GaAs [011¯] direction, which is presumably related to the in-plane anisotropic structural characteristics of the grown CdTe layers. By incorporating strained CdZnTe/CdTe superlattice-based dislocation filtering layers (DFLs), a significant improvement in material quality has been achieved in (133)B-orientated CdTe buffer layers, including a reduced etch pit density in the low-105 cm−2 range and improved surface roughness. These results indicate that the CdTe (133)B DFL buffer layer process is a feasible approach for growing high-quality CdTe and HgCdTe materials on large-area, low-cost alternative substrates.
Related Topics
Concepts
Cadmium telluride photovoltaics
Materials science
Etch pit density
Superlattice
Dislocation
Optoelectronics
Wafer
Buffer (optical fiber)
Epitaxy
Crystal (programming language)
Layer (electronics)
Crystallography
Nanotechnology
Chemistry
Etching (microfabrication)
Composite material
Computer science
Telecommunications
Programming language
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1063/5.0143854
- OA Status
- hybrid
- Cited By
- 4
- References
- 42
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4375863062
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4375863062Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1063/5.0143854Digital Object Identifier
- Title
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Structural properties of MBE-grown CdTe (133)B buffer layers on GaAs (211)B substrates with CdZnTe/CdTe superlattice-based dislocation filtering layersWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2023Year of publication
- Publication date
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2023-05-08Full publication date if available
- Authors
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Wenwu Pan, Shuo Ma, Xiao Sun, Shimul Kanti Nath, Songqing Zhang, Renjie Gu, Zekai Zhang, L. Faraone, Wen LeiList of authors in order
- Landing page
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https://doi.org/10.1063/5.0143854Publisher landing page
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YesWhether a free full text is available
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hybridOpen access status per OpenAlex
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https://doi.org/10.1063/5.0143854Direct OA link when available
- Concepts
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Cadmium telluride photovoltaics, Materials science, Etch pit density, Superlattice, Dislocation, Optoelectronics, Wafer, Buffer (optical fiber), Epitaxy, Crystal (programming language), Layer (electronics), Crystallography, Nanotechnology, Chemistry, Etching (microfabrication), Composite material, Computer science, Telecommunications, Programming languageTop concepts (fields/topics) attached by OpenAlex
- Cited by
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4Total citation count in OpenAlex
- Citations by year (recent)
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2025: 2, 2024: 2Per-year citation counts (last 5 years)
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10Other works algorithmically related by OpenAlex
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