The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates Article Swipe
Manyu Dang
,
Huiwen Deng
,
Suguo Huo
,
R. R. Juluri
,
Ana M. Sánchez
,
A.J. Seeds
,
Huiyun Liu
,
Mingchu Tang
·
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1088/1361-6463/ace36d
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1088/1361-6463/ace36d
Monolithic integration of III–V optoelectronic devices on Si platform is gaining momentum, since it enables advantages of low cost, less complexity and high yield for mass production. With the aim of achieving advances in monolithic integration, the challenges associated with lattice mismatch between III–V layers and Si substrates must be overcome, as a low density of threading dislocations (TDs) is a prerequisite for the robustness of the integrated devices. In this paper, we have investigated and compare different types of dislocation filter layers (DFLs) from InGaAs asymmetric step-graded buffer layer (ASG), InGaAs/GaAs strained-layer superlattices, and quaternary alloy InAlGaAs ASG, on the functionality of reducing TD density (TDD) for GaAs buffer layers on Si. Compared to other DFLs, the sample with InAlGaAs ASG buffer layer shows the lowest average TDD value and roughness, while the decrease of TDD in the sample with InAlGaAs ASG buffer layer can be understood in terms of the hardening agent role of aluminium in the InAlGaAs ASG. By further optimising the InAlGaAs ASG through thermal cyclic annealing, we successfully demonstrate a low surface TDD of 6.3 ± 0.1 × 10 6 cm −2 for a 2 μ m GaAs/InAlGaAs ASG buffer layer grown on Si. These results could provide a thin buffer design for monolithic integration of various III–V devices on Si substrates.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1088/1361-6463/ace36d
- https://iopscience.iop.org/article/10.1088/1361-6463/ace36d/pdf
- OA Status
- hybrid
- Cited By
- 14
- References
- 33
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4382932737
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4382932737Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1088/1361-6463/ace36dDigital Object Identifier
- Title
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The growth of low-threading-dislocation-density GaAs buffer layers on Si substratesWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2023Year of publication
- Publication date
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2023-07-03Full publication date if available
- Authors
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Manyu Dang, Huiwen Deng, Suguo Huo, R. R. Juluri, Ana M. Sánchez, A.J. Seeds, Huiyun Liu, Mingchu TangList of authors in order
- Landing page
-
https://doi.org/10.1088/1361-6463/ace36dPublisher landing page
- PDF URL
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https://iopscience.iop.org/article/10.1088/1361-6463/ace36d/pdfDirect link to full text PDF
- Open access
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YesWhether a free full text is available
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hybridOpen access status per OpenAlex
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https://iopscience.iop.org/article/10.1088/1361-6463/ace36d/pdfDirect OA link when available
- Concepts
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Materials science, Optoelectronics, Buffer (optical fiber), Dislocation, Annealing (glass), Superlattice, Composite material, Telecommunications, Computer scienceTop concepts (fields/topics) attached by OpenAlex
- Cited by
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14Total citation count in OpenAlex
- Citations by year (recent)
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2025: 9, 2024: 4, 2023: 1Per-year citation counts (last 5 years)
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33Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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