Tunneling-Based Memory and Advances in Indium Phosphide-Based Processing Article Swipe
This research explores InP-based tunnel diodes to supplement existing memory and high speed IC technology. Tunneling-based static random access memory (TSRAM) uses the bistability of tunnel diodes to construct memory elements and requires tunnel diodes with peak currents exceeding transistor leakage currents, high peak-to-valley ratio (PVR) and low valley currents and voltages. InAlAs-InGaAs resonant interband tunnel diodes (RITD) were investigated for TSRAM through design, fabrication and electrical characterizations. In particular, the effects of doping density, barrier thicknesses and alloy composition on the RITD properties were studied. Tunnel diodes with peak and valley currents spanning 5 orders of magnitude, with PVRs as high as 70 were demonstrated through 3x variation in the effective doping density. Valley currents as low as 0.07 nA/extmu m$^2$, which is the lowest reported for TSRAM tunnel diodes, and valley voltages as low as 250 mV were demonstrated. Submicron device scaling was explored through the development of a fabrication process. To reduce the parasitics in tunnel diode/transistor integrated circuits, a novel self-aligned contact process using dielectric spacers and benzocyclobutene etchback was developed. Silicon nitride and oxide spacer sidewalls were demonstrated through the development of anisotropic plasma etches. InP-based monolithically integrated resonant tunnel diodes and heterojunction bipolar transistors were fabricated using this process and electrically characterized.
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Metadata
- Type
- article
- Language
- en
- OA Status
- green
- OpenAlex ID
- https://openalex.org/W2227818575
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W2227818575Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.7274/9g54xg96j6rDigital Object Identifier
- Title
-
Tunneling-Based Memory and Advances in Indium Phosphide-Based ProcessingWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2022Year of publication
- Publication date
-
2022-09-15Full publication date if available
- Authors
-
Surajit SutarList of authors in order
- Open access
-
YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- Concepts
-
Indium phosphide, Quantum tunnelling, Indium, Phosphide, Optoelectronics, Materials science, Nanotechnology, Computer science, Engineering physics, Metallurgy, Physics, Nickel, Gallium arsenideTop concepts (fields/topics) attached by OpenAlex
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0Total citation count in OpenAlex
Full payload
| id | https://openalex.org/W2227818575 |
|---|---|
| doi | https://doi.org/10.7274/9g54xg96j6r |
| ids.doi | https://doi.org/10.7274/9g54xg96j6r |
| ids.mag | 2227818575 |
| ids.openalex | https://openalex.org/W2227818575 |
| fwci | 0.0 |
| type | article |
| title | Tunneling-Based Memory and Advances in Indium Phosphide-Based Processing |
| biblio.issue | |
| biblio.volume | |
| biblio.last_page | |
| biblio.first_page | |
| topics[0].id | https://openalex.org/T10299 |
| topics[0].field.id | https://openalex.org/fields/22 |
| topics[0].field.display_name | Engineering |
| topics[0].score | 0.9663000106811523 |
| topics[0].domain.id | https://openalex.org/domains/3 |
| topics[0].domain.display_name | Physical Sciences |
| topics[0].subfield.id | https://openalex.org/subfields/2208 |
| topics[0].subfield.display_name | Electrical and Electronic Engineering |
| topics[0].display_name | Photonic and Optical Devices |
| topics[1].id | https://openalex.org/T11050 |
| topics[1].field.id | https://openalex.org/fields/31 |
| topics[1].field.display_name | Physics and Astronomy |
| topics[1].score | 0.9621000289916992 |
| topics[1].domain.id | https://openalex.org/domains/3 |
| topics[1].domain.display_name | Physical Sciences |
| topics[1].subfield.id | https://openalex.org/subfields/3107 |
| topics[1].subfield.display_name | Atomic and Molecular Physics, and Optics |
| topics[1].display_name | Photorefractive and Nonlinear Optics |
| topics[2].id | https://openalex.org/T11429 |
| topics[2].field.id | https://openalex.org/fields/22 |
| topics[2].field.display_name | Engineering |
| topics[2].score | 0.9549999833106995 |
| topics[2].domain.id | https://openalex.org/domains/3 |
| topics[2].domain.display_name | Physical Sciences |
| topics[2].subfield.id | https://openalex.org/subfields/2208 |
| topics[2].subfield.display_name | Electrical and Electronic Engineering |
| topics[2].display_name | Semiconductor Lasers and Optical Devices |
| is_xpac | False |
| apc_list | |
| apc_paid | |
| concepts[0].id | https://openalex.org/C2776152967 |
| concepts[0].level | 3 |
| concepts[0].score | 0.6490200757980347 |
| concepts[0].wikidata | https://www.wikidata.org/wiki/Q416291 |
| concepts[0].display_name | Indium phosphide |
| concepts[1].id | https://openalex.org/C120398109 |
| concepts[1].level | 2 |
| concepts[1].score | 0.5113236904144287 |
| concepts[1].wikidata | https://www.wikidata.org/wiki/Q175751 |
| concepts[1].display_name | Quantum tunnelling |
| concepts[2].id | https://openalex.org/C543292547 |
| concepts[2].level | 2 |
| concepts[2].score | 0.4491528868675232 |
| concepts[2].wikidata | https://www.wikidata.org/wiki/Q1094 |
| concepts[2].display_name | Indium |
| concepts[3].id | https://openalex.org/C2780654602 |
| concepts[3].level | 3 |
| concepts[3].score | 0.4427070915699005 |
| concepts[3].wikidata | https://www.wikidata.org/wiki/Q411835 |
| concepts[3].display_name | Phosphide |
| concepts[4].id | https://openalex.org/C49040817 |
| concepts[4].level | 1 |
| concepts[4].score | 0.43604129552841187 |
| concepts[4].wikidata | https://www.wikidata.org/wiki/Q193091 |
| concepts[4].display_name | Optoelectronics |
| concepts[5].id | https://openalex.org/C192562407 |
| concepts[5].level | 0 |
| concepts[5].score | 0.4082382917404175 |
| concepts[5].wikidata | https://www.wikidata.org/wiki/Q228736 |
| concepts[5].display_name | Materials science |
| concepts[6].id | https://openalex.org/C171250308 |
| concepts[6].level | 1 |
| concepts[6].score | 0.3619902729988098 |
| concepts[6].wikidata | https://www.wikidata.org/wiki/Q11468 |
| concepts[6].display_name | Nanotechnology |
| concepts[7].id | https://openalex.org/C41008148 |
| concepts[7].level | 0 |
| concepts[7].score | 0.3424089848995209 |
| concepts[7].wikidata | https://www.wikidata.org/wiki/Q21198 |
| concepts[7].display_name | Computer science |
| concepts[8].id | https://openalex.org/C61696701 |
| concepts[8].level | 1 |
| concepts[8].score | 0.3228336572647095 |
| concepts[8].wikidata | https://www.wikidata.org/wiki/Q770766 |
| concepts[8].display_name | Engineering physics |
| concepts[9].id | https://openalex.org/C191897082 |
| concepts[9].level | 1 |
| concepts[9].score | 0.2468424141407013 |
| concepts[9].wikidata | https://www.wikidata.org/wiki/Q11467 |
| concepts[9].display_name | Metallurgy |
| concepts[10].id | https://openalex.org/C121332964 |
| concepts[10].level | 0 |
| concepts[10].score | 0.1895751655101776 |
| concepts[10].wikidata | https://www.wikidata.org/wiki/Q413 |
| concepts[10].display_name | Physics |
| concepts[11].id | https://openalex.org/C504270822 |
| concepts[11].level | 2 |
| concepts[11].score | 0.0 |
| concepts[11].wikidata | https://www.wikidata.org/wiki/Q744 |
| concepts[11].display_name | Nickel |
| concepts[12].id | https://openalex.org/C510052550 |
| concepts[12].level | 2 |
| concepts[12].score | 0.0 |
| concepts[12].wikidata | https://www.wikidata.org/wiki/Q422819 |
| concepts[12].display_name | Gallium arsenide |
| keywords[0].id | https://openalex.org/keywords/indium-phosphide |
| keywords[0].score | 0.6490200757980347 |
| keywords[0].display_name | Indium phosphide |
| keywords[1].id | https://openalex.org/keywords/quantum-tunnelling |
| keywords[1].score | 0.5113236904144287 |
| keywords[1].display_name | Quantum tunnelling |
| keywords[2].id | https://openalex.org/keywords/indium |
| keywords[2].score | 0.4491528868675232 |
| keywords[2].display_name | Indium |
| keywords[3].id | https://openalex.org/keywords/phosphide |
| keywords[3].score | 0.4427070915699005 |
| keywords[3].display_name | Phosphide |
| keywords[4].id | https://openalex.org/keywords/optoelectronics |
| keywords[4].score | 0.43604129552841187 |
| keywords[4].display_name | Optoelectronics |
| keywords[5].id | https://openalex.org/keywords/materials-science |
| keywords[5].score | 0.4082382917404175 |
| keywords[5].display_name | Materials science |
| keywords[6].id | https://openalex.org/keywords/nanotechnology |
| keywords[6].score | 0.3619902729988098 |
| keywords[6].display_name | Nanotechnology |
| keywords[7].id | https://openalex.org/keywords/computer-science |
| keywords[7].score | 0.3424089848995209 |
| keywords[7].display_name | Computer science |
| keywords[8].id | https://openalex.org/keywords/engineering-physics |
| keywords[8].score | 0.3228336572647095 |
| keywords[8].display_name | Engineering physics |
| keywords[9].id | https://openalex.org/keywords/metallurgy |
| keywords[9].score | 0.2468424141407013 |
| keywords[9].display_name | Metallurgy |
| keywords[10].id | https://openalex.org/keywords/physics |
| keywords[10].score | 0.1895751655101776 |
| keywords[10].display_name | Physics |
| language | en |
| locations[0].id | pmh:oai:figshare.com:article/24738231 |
| locations[0].is_oa | True |
| locations[0].source.id | https://openalex.org/S4306400572 |
| locations[0].source.issn | |
| locations[0].source.type | repository |
| locations[0].source.is_oa | False |
| locations[0].source.issn_l | |
| locations[0].source.is_core | False |
| locations[0].source.is_in_doaj | False |
| locations[0].source.display_name | OPAL (Open@LaTrobe) (La Trobe University) |
| locations[0].source.host_organization | https://openalex.org/I196829312 |
| locations[0].source.host_organization_name | La Trobe University |
| locations[0].source.host_organization_lineage | https://openalex.org/I196829312 |
| locations[0].license | |
| locations[0].pdf_url | |
| locations[0].version | submittedVersion |
| locations[0].raw_type | Text |
| locations[0].license_id | |
| locations[0].is_accepted | False |
| locations[0].is_published | False |
| locations[0].raw_source_name | |
| locations[0].landing_page_url | |
| locations[1].id | mag:2227818575 |
| locations[1].is_oa | False |
| locations[1].source | |
| locations[1].license | |
| locations[1].pdf_url | |
| locations[1].version | |
| locations[1].raw_type | |
| locations[1].license_id | |
| locations[1].is_accepted | False |
| locations[1].is_published | |
| locations[1].raw_source_name | |
| locations[1].landing_page_url | https://www.curate.nd.edu/downloads/9k41zc79t75 |
| locations[2].id | doi:10.7274/9g54xg96j6r |
| locations[2].is_oa | True |
| locations[2].source.id | https://openalex.org/S7407053147 |
| locations[2].source.type | repository |
| locations[2].source.is_oa | False |
| locations[2].source.issn_l | |
| locations[2].source.is_core | False |
| locations[2].source.is_in_doaj | False |
| locations[2].source.display_name | University of Notre Dame |
| locations[2].source.host_organization | |
| locations[2].source.host_organization_name | |
| locations[2].license | |
| locations[2].pdf_url | |
| locations[2].version | |
| locations[2].raw_type | article-journal |
| locations[2].license_id | |
| locations[2].is_accepted | False |
| locations[2].is_published | |
| locations[2].raw_source_name | |
| locations[2].landing_page_url | https://doi.org/10.7274/9g54xg96j6r |
| indexed_in | datacite |
| authorships[0].author.id | https://openalex.org/A5060443611 |
| authorships[0].author.orcid | https://orcid.org/0000-0003-3114-718X |
| authorships[0].author.display_name | Surajit Sutar |
| authorships[0].author_position | first |
| authorships[0].raw_author_name | Surajit Kumar Sutar |
| authorships[0].is_corresponding | True |
| has_content.pdf | False |
| has_content.grobid_xml | False |
| is_paratext | False |
| open_access.is_oa | True |
| open_access.oa_url | |
| open_access.oa_status | green |
| open_access.any_repository_has_fulltext | False |
| created_date | 2025-10-10T00:00:00 |
| display_name | Tunneling-Based Memory and Advances in Indium Phosphide-Based Processing |
| has_fulltext | False |
| is_retracted | False |
| updated_date | 2025-11-06T06:51:31.235846 |
| primary_topic.id | https://openalex.org/T10299 |
| primary_topic.field.id | https://openalex.org/fields/22 |
| primary_topic.field.display_name | Engineering |
| primary_topic.score | 0.9663000106811523 |
| primary_topic.domain.id | https://openalex.org/domains/3 |
| primary_topic.domain.display_name | Physical Sciences |
| primary_topic.subfield.id | https://openalex.org/subfields/2208 |
| primary_topic.subfield.display_name | Electrical and Electronic Engineering |
| primary_topic.display_name | Photonic and Optical Devices |
| cited_by_count | 0 |
| locations_count | 3 |
| best_oa_location.id | pmh:oai:figshare.com:article/24738231 |
| best_oa_location.is_oa | True |
| best_oa_location.source.id | https://openalex.org/S4306400572 |
| best_oa_location.source.issn | |
| best_oa_location.source.type | repository |
| best_oa_location.source.is_oa | False |
| best_oa_location.source.issn_l | |
| best_oa_location.source.is_core | False |
| best_oa_location.source.is_in_doaj | False |
| best_oa_location.source.display_name | OPAL (Open@LaTrobe) (La Trobe University) |
| best_oa_location.source.host_organization | https://openalex.org/I196829312 |
| best_oa_location.source.host_organization_name | La Trobe University |
| best_oa_location.source.host_organization_lineage | https://openalex.org/I196829312 |
| best_oa_location.license | |
| best_oa_location.pdf_url | |
| best_oa_location.version | submittedVersion |
| best_oa_location.raw_type | Text |
| best_oa_location.license_id | |
| best_oa_location.is_accepted | False |
| best_oa_location.is_published | False |
| best_oa_location.raw_source_name | |
| best_oa_location.landing_page_url | |
| primary_location.id | pmh:oai:figshare.com:article/24738231 |
| primary_location.is_oa | True |
| primary_location.source.id | https://openalex.org/S4306400572 |
| primary_location.source.issn | |
| primary_location.source.type | repository |
| primary_location.source.is_oa | False |
| primary_location.source.issn_l | |
| primary_location.source.is_core | False |
| primary_location.source.is_in_doaj | False |
| primary_location.source.display_name | OPAL (Open@LaTrobe) (La Trobe University) |
| primary_location.source.host_organization | https://openalex.org/I196829312 |
| primary_location.source.host_organization_name | La Trobe University |
| primary_location.source.host_organization_lineage | https://openalex.org/I196829312 |
| primary_location.license | |
| primary_location.pdf_url | |
| primary_location.version | submittedVersion |
| primary_location.raw_type | Text |
| primary_location.license_id | |
| primary_location.is_accepted | False |
| primary_location.is_published | False |
| primary_location.raw_source_name | |
| primary_location.landing_page_url | |
| publication_date | 2022-09-15 |
| publication_year | 2022 |
| referenced_works_count | 0 |
| abstract_inverted_index.5 | 94 |
| abstract_inverted_index.a | 150, 162 |
| abstract_inverted_index.3x | 107 |
| abstract_inverted_index.70 | 103 |
| abstract_inverted_index.IC | 13 |
| abstract_inverted_index.In | 68 |
| abstract_inverted_index.To | 153 |
| abstract_inverted_index.as | 100, 102, 116, 118, 134, 136 |
| abstract_inverted_index.in | 109, 157 |
| abstract_inverted_index.is | 123 |
| abstract_inverted_index.mV | 138 |
| abstract_inverted_index.of | 24, 72, 96, 149, 186 |
| abstract_inverted_index.on | 80 |
| abstract_inverted_index.to | 6, 27 |
| abstract_inverted_index.250 | 137 |
| abstract_inverted_index.and | 10, 31, 46, 50, 65, 77, 90, 131, 170, 177, 196, 205 |
| abstract_inverted_index.for | 60, 127 |
| abstract_inverted_index.low | 47, 117, 135 |
| abstract_inverted_index.the | 22, 70, 81, 110, 124, 147, 155, 184 |
| abstract_inverted_index.was | 144, 173 |
| abstract_inverted_index.0.07 | 119 |
| abstract_inverted_index.PVRs | 99 |
| abstract_inverted_index.RITD | 82 |
| abstract_inverted_index.This | 0 |
| abstract_inverted_index.high | 11, 42, 101 |
| abstract_inverted_index.peak | 36, 89 |
| abstract_inverted_index.this | 203 |
| abstract_inverted_index.uses | 21 |
| abstract_inverted_index.were | 58, 84, 104, 139, 181, 200 |
| abstract_inverted_index.with | 35, 88, 98 |
| abstract_inverted_index.(PVR) | 45 |
| abstract_inverted_index.TSRAM | 61, 128 |
| abstract_inverted_index.alloy | 78 |
| abstract_inverted_index.novel | 163 |
| abstract_inverted_index.oxide | 178 |
| abstract_inverted_index.ratio | 44 |
| abstract_inverted_index.speed | 12 |
| abstract_inverted_index.using | 167, 202 |
| abstract_inverted_index.which | 122 |
| abstract_inverted_index.(RITD) | 57 |
| abstract_inverted_index.Tunnel | 86 |
| abstract_inverted_index.Valley | 114 |
| abstract_inverted_index.access | 18 |
| abstract_inverted_index.device | 142 |
| abstract_inverted_index.diodes | 5, 26, 34, 56, 87, 195 |
| abstract_inverted_index.doping | 73, 112 |
| abstract_inverted_index.lowest | 125 |
| abstract_inverted_index.m$^2$, | 121 |
| abstract_inverted_index.memory | 9, 19, 29 |
| abstract_inverted_index.orders | 95 |
| abstract_inverted_index.plasma | 188 |
| abstract_inverted_index.random | 17 |
| abstract_inverted_index.reduce | 154 |
| abstract_inverted_index.spacer | 179 |
| abstract_inverted_index.static | 16 |
| abstract_inverted_index.tunnel | 4, 25, 33, 55, 129, 158, 194 |
| abstract_inverted_index.valley | 48, 91, 132 |
| abstract_inverted_index.(TSRAM) | 20 |
| abstract_inverted_index.Silicon | 175 |
| abstract_inverted_index.barrier | 75 |
| abstract_inverted_index.bipolar | 198 |
| abstract_inverted_index.contact | 165 |
| abstract_inverted_index.design, | 63 |
| abstract_inverted_index.diodes, | 130 |
| abstract_inverted_index.effects | 71 |
| abstract_inverted_index.etches. | 189 |
| abstract_inverted_index.leakage | 40 |
| abstract_inverted_index.nitride | 176 |
| abstract_inverted_index.process | 166, 204 |
| abstract_inverted_index.scaling | 143 |
| abstract_inverted_index.spacers | 169 |
| abstract_inverted_index.through | 62, 106, 146, 183 |
| abstract_inverted_index.currents | 37, 49, 92, 115 |
| abstract_inverted_index.density, | 74 |
| abstract_inverted_index.density. | 113 |
| abstract_inverted_index.elements | 30 |
| abstract_inverted_index.etchback | 172 |
| abstract_inverted_index.existing | 8 |
| abstract_inverted_index.explored | 145 |
| abstract_inverted_index.explores | 2 |
| abstract_inverted_index.nA/extmu | 120 |
| abstract_inverted_index.process. | 152 |
| abstract_inverted_index.reported | 126 |
| abstract_inverted_index.requires | 32 |
| abstract_inverted_index.research | 1 |
| abstract_inverted_index.resonant | 53, 193 |
| abstract_inverted_index.spanning | 93 |
| abstract_inverted_index.studied. | 85 |
| abstract_inverted_index.voltages | 133 |
| abstract_inverted_index.InP-based | 3, 190 |
| abstract_inverted_index.Submicron | 141 |
| abstract_inverted_index.circuits, | 161 |
| abstract_inverted_index.construct | 28 |
| abstract_inverted_index.currents, | 41 |
| abstract_inverted_index.effective | 111 |
| abstract_inverted_index.exceeding | 38 |
| abstract_inverted_index.interband | 54 |
| abstract_inverted_index.sidewalls | 180 |
| abstract_inverted_index.variation | 108 |
| abstract_inverted_index.voltages. | 51 |
| abstract_inverted_index.developed. | 174 |
| abstract_inverted_index.dielectric | 168 |
| abstract_inverted_index.electrical | 66 |
| abstract_inverted_index.fabricated | 201 |
| abstract_inverted_index.integrated | 160, 192 |
| abstract_inverted_index.magnitude, | 97 |
| abstract_inverted_index.parasitics | 156 |
| abstract_inverted_index.properties | 83 |
| abstract_inverted_index.supplement | 7 |
| abstract_inverted_index.transistor | 39 |
| abstract_inverted_index.anisotropic | 187 |
| abstract_inverted_index.bistability | 23 |
| abstract_inverted_index.composition | 79 |
| abstract_inverted_index.development | 148, 185 |
| abstract_inverted_index.fabrication | 64, 151 |
| abstract_inverted_index.particular, | 69 |
| abstract_inverted_index.technology. | 14 |
| abstract_inverted_index.thicknesses | 76 |
| abstract_inverted_index.transistors | 199 |
| abstract_inverted_index.demonstrated | 105, 182 |
| abstract_inverted_index.electrically | 206 |
| abstract_inverted_index.investigated | 59 |
| abstract_inverted_index.self-aligned | 164 |
| abstract_inverted_index.InAlAs-InGaAs | 52 |
| abstract_inverted_index.demonstrated. | 140 |
| abstract_inverted_index.characterized. | 207 |
| abstract_inverted_index.heterojunction | 197 |
| abstract_inverted_index.monolithically | 191 |
| abstract_inverted_index.peak-to-valley | 43 |
| abstract_inverted_index.Tunneling-based | 15 |
| abstract_inverted_index.benzocyclobutene | 171 |
| abstract_inverted_index.diode/transistor | 159 |
| abstract_inverted_index.characterizations. | 67 |
| cited_by_percentile_year | |
| corresponding_author_ids | https://openalex.org/A5060443611 |
| countries_distinct_count | 0 |
| institutions_distinct_count | 1 |
| citation_normalized_percentile.value | 0.00039518 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |