This research explores InP-based tunnel diodes to supplement existing memory and high speed IC technology. Tunneling-based static random access memory (TSRAM) uses the bistability of tunnel diodes to construct memory elements and requires tunnel diodes with peak currents exceeding transistor leakage currents, high peak-to-valley ratio (PVR) and low valley currents and voltages. InAlAs-InGaAs resonant interband tunnel diodes (RITD) were investigated for TSRAM through design, fabrication and electrical characterizat…