Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism Article Swipe
YOU?
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· 2018
· Open Access
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· DOI: https://doi.org/10.1021/acs.chemmater.8b02924
© 2018 American Chemical Society. When two-dimensional (2D) group-VI transition metal dichalcogenides such as tungsten disulfide (WS 2 ) are grown by atomic layer deposition (ALD) for atomic growth control at low deposition temperatures (≤450 °C), they often suffer from a nanocrystalline grain structure limiting the carrier mobility. The crystallinity and monolayer thickness control during ALD of 2D materials is determined by the nucleation mechanism, which is currently not well understood. Here, we propose a qualitative model for the WS 2 nucleation behavior on dielectric surfaces during plasma-enhanced (PE-) ALD using tungsten hexafluoride (WF 6 ), dihydrogen (H 2 ) plasma and dihydrogen sulfide (H 2 S) based on analyses of the morphology of the WS 2 crystals. The WS 2 crystal grain size increases from ∼20 to 200 nm by lowering the nucleation density. This is achieved by lowering the precursor adsorption rate on the starting surface using an inherently less reactive starting surface, by decreasing the H 2 plasma reactivity, and by enhancing the mobility of the adsorbed species at higher deposition temperature. Since silicon dioxide (SiO 2 ) is less reactive than aluminum oxide (Al 2 O 3 ), and diffusion and crystal ripening is enhanced at higher deposition temperature, WS 2 nucleates in an anisotropic island-like growth mode with preferential lateral growth from the WS 2 crystal edges. This work emphasizes that increasing the crystal grain size while controlling the basal plane orientation is possible during ALD at low deposition temperatures, based on insight in the nucleation behavior, which is key to advance the field of ALD of 2D materials. Moreover, this work demonstrates the conformal deposition on three-dimensional (3D) structures, with WS 2 retaining the basal plane orientation along topographic structures.
Related Topics
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1021/acs.chemmater.8b02924
- OA Status
- green
- Cited By
- 70
- References
- 89
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2892072908
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W2892072908Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1021/acs.chemmater.8b02924Digital Object Identifier
- Title
-
Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation MechanismWork title
- Type
-
articleOpenAlex work type
- Language
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enPrimary language
- Publication year
-
2018Year of publication
- Publication date
-
2018-09-17Full publication date if available
- Authors
-
Benjamin Groven, Ankit Nalin Mehta, H. Bender, Johan Meersschaut, Thomas Nuytten, Patrick Verdonck, Thierry Conard, Quentin Smets, T. Schram, Ben Schoenaers, A. Stesmans, Valeri Afanas’ev, Wilfried Vandervorst, Marc Heyns, Matty Caymax, Iuliana Radu, Annelies DelabieList of authors in order
- Landing page
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https://doi.org/10.1021/acs.chemmater.8b02924Publisher landing page
- Open access
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YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- OA URL
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https://lirias.kuleuven.be/handle/123456789/629350Direct OA link when available
- Concepts
-
Nucleation, Atomic layer deposition, Materials science, Crystal (programming language), Crystallinity, Tungsten, Chemical vapor deposition, Chemical engineering, Monolayer, Crystal growth, Crystallography, Nanotechnology, Chemistry, Thin film, Metallurgy, Composite material, Organic chemistry, Engineering, Computer science, Programming languageTop concepts (fields/topics) attached by OpenAlex
- Cited by
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70Total citation count in OpenAlex
- Citations by year (recent)
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2025: 7, 2024: 9, 2023: 16, 2022: 11, 2021: 9Per-year citation counts (last 5 years)
- References (count)
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89Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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