Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect Article Swipe

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Xiaohan Wu , Ruijing Ge , Yuqian Gu , Emmanuel Okogbue , Jianping Shi , Abhay Shivayogimath , Peter Bøggild , Timothy J. Booth , Yanfeng Zhang , Yeonwoong Jung , Jack C. Lee , Deji Akinwande ·

YOU? · · 2021 · Open Access · · DOI: https://doi.org/10.48550/arxiv.2110.03863 · OA: W3205147507

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements.