Vertical Electrolyte‐Gated Transistors: Structures, Materials, Integrations, and Applications Article Swipe
Bin Bao
,
Ting Zhang
,
Jingying Xie
,
Jin Wu
,
Gang He
,
Lang Jiang
,
Yanlin Song
,
Shouguo Wang
·
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1002/aelm.202400955
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1002/aelm.202400955
Biological synapse‐inspired electrolyte‐gated transistors have received broad attention recently as a competitive candidate for constructing artificial intelligence (AI) systems to meet the data memorizing and processing challenges brought by the big data era. Vertically structured electrolyte‐gated transistors, which decouple the channel length of the transistors from the resolution of photolithography and printing techniques, enjoy significantly improved electrical performances compared to their planar counterparts. The vertical electrolyte‐gated transistors (vEGTs) are constructed in different device architectures by diverse materials, and integrated into circuits with hierarchical level of sophistication. Benefiting from their unique device structures, a wealth of available component materials and integration strategies, vEGTs are finding their pathway toward diverse applications such as synaptic emulating, neuromorphic computing, and biological sensing. Herein, recent progress on the vEGTs is reviewed. Three typical device structures for the vEGTs are categorized and exemplified. The materials used to construct the semiconductor channels and the ion‐conducting electrolytes are presented. The electrical performances of typical vEGTs are briefly discussed. The integration strategies and application fields of the vEGTs are summarized. At the end, the challenges for the further development of advanced vEGTs are discussed.
Related Topics
Concepts
Transistor
Neuromorphic engineering
Materials science
Nanotechnology
Electrolyte
Computer science
Planar
Lithography
Photolithography
Electronic engineering
Optoelectronics
Electrical engineering
Artificial intelligence
Voltage
Engineering
Electrode
Artificial neural network
Physical chemistry
Chemistry
Computer graphics (images)
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1002/aelm.202400955
- https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202400955
- OA Status
- gold
- Cited By
- 1
- References
- 175
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4411541621
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4411541621Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1002/aelm.202400955Digital Object Identifier
- Title
-
Vertical Electrolyte‐Gated Transistors: Structures, Materials, Integrations, and ApplicationsWork title
- Type
-
articleOpenAlex work type
- Language
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enPrimary language
- Publication year
-
2025Year of publication
- Publication date
-
2025-06-23Full publication date if available
- Authors
-
Bin Bao, Ting Zhang, Jingying Xie, Jin Wu, Gang He, Lang Jiang, Yanlin Song, Shouguo WangList of authors in order
- Landing page
-
https://doi.org/10.1002/aelm.202400955Publisher landing page
- PDF URL
-
https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202400955Direct link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
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https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202400955Direct OA link when available
- Concepts
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Transistor, Neuromorphic engineering, Materials science, Nanotechnology, Electrolyte, Computer science, Planar, Lithography, Photolithography, Electronic engineering, Optoelectronics, Electrical engineering, Artificial intelligence, Voltage, Engineering, Electrode, Artificial neural network, Physical chemistry, Chemistry, Computer graphics (images)Top concepts (fields/topics) attached by OpenAlex
- Cited by
-
1Total citation count in OpenAlex
- Citations by year (recent)
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2025: 1Per-year citation counts (last 5 years)
- References (count)
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175Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.electrolyte‐gated | 3, 36, 66 |
| cited_by_percentile_year.max | 95 |
| cited_by_percentile_year.min | 91 |
| corresponding_author_ids | https://openalex.org/A5109553608, https://openalex.org/A5086561744, https://openalex.org/A5002343733 |
| countries_distinct_count | 1 |
| institutions_distinct_count | 8 |
| corresponding_institution_ids | https://openalex.org/I143868143, https://openalex.org/I19820366, https://openalex.org/I4210116048, https://openalex.org/I4210155088 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/9 |
| sustainable_development_goals[0].score | 0.4399999976158142 |
| sustainable_development_goals[0].display_name | Industry, innovation and infrastructure |
| citation_normalized_percentile.value | 0.81182633 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | True |