Visualization of electronic topology in ZrSiSe by scanning tunneling microscopy Article Swipe
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· 2018
· Open Access
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· DOI: https://doi.org/10.1103/physrevb.98.115127
· OA: W2785981481
As emerging topological nodal-line semimetals, the family of ZrSiX (X = O, S,\nSe, Te) has attracted broad interests in condensed matter physics due to their\nfuture applications in spintonics. Here, we apply a scanning tunneling\nmicroscopy (STM) to study the structural symmetry and electronic topology of\nZrSiSe. The glide mirror symmetry is verified by quantifying the lattice\nstructure of the ZrSe bilayer based on bias selective topographies. The\nquasiparticle interference analysis is used to identify the band structure of\nZrSiSe. The nodal line is experimentally determined at $\\sim$ 250 meV above the\nFermi level. An extra surface state Dirac point at $\\sim$ 400 meV below the\nFermi level is also determined. Our STM measurement provides a direct\nexperimental evidence of the nodal-line state in the family of ZrSiX.\n
