Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) Article Swipe
Takashi Onaya
,
Toshihide Nabatame
,
Mari Inoue
,
Tomomi Sawada
,
Hiroyuki Ota
,
Yukinori Morita
·
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1063/5.0091661
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1063/5.0091661
Ferroelectricity and crystallinity of TiN/ZrO2/HfxZr1−xO2 (Hf:Zr = 0.43:0.57; HZO)/SiO2/Si metal–ferroelectric–semiconductor (MFS) capacitors with a top ZrO2 nucleation layer fabricated by low-temperature processes at 300 °C of atomic layer deposition and post-metallization annealing (PMA) were systematically investigated. The HZO (10 nm)-based MFS capacitors without (w/o) and with 2- and 10-nm-thick ZrO2 films (ZrO2-2 nm and ZrO2-10 nm, respectively) were found to form an extremely thin SiO2 interfacial layer (SiO2-IL) with a thickness of one or two monolayers. The HZO film in the TiN/ZrO2/HZO/SiO2/Si capacitors formed the ferroelectric orthorhombic phase even with a low thermal budget of 300 °C; in contrast, that of the w/o capacitor exhibited a predominantly amorphous structure. This result is attributed to the polycrystalline ZrO2 film acting as a nucleation layer for the crystallization of an amorphous HZO film during PMA treatment. Therefore, the remnant polarization (2Pr) increased in the order of w/o (2.2 µC/cm2) < ZrO2-2 nm (6.8 µC/cm2) < ZrO2-10 nm (15 µC/cm2). The endurance properties of the ZrO2-10 nm capacitor were free from the wake-up effect and exhibited less degradation because of the insertion of a thick ZrO2 film of 10 nm at the TiN/HZO interface, which promoted the preferential formation of the ferroelectric orthorhombic phase and prevented the formation of oxygen vacancies at the ZrO2/HZO interface. These results suggest that superior ferroelectricity with wake-up-free properties and higher fatigue resistance of HZO-based MFS capacitors can be achieved by a low-temperature fabrication technique (300 °C) using a top ZrO2 nucleation layer.
Related Topics
Concepts
Materials science
Ferroelectricity
Tin
Amorphous solid
Orthorhombic crystal system
Nucleation
Crystallite
Crystallinity
Crystallization
Annealing (glass)
Capacitor
Dielectric
Analytical Chemistry (journal)
Optoelectronics
Composite material
Crystallography
Crystal structure
Chemical engineering
Metallurgy
Chemistry
Quantum mechanics
Physics
Voltage
Engineering
Organic chemistry
Chromatography
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1063/5.0091661
- https://aip.scitation.org/doi/pdf/10.1063/5.0091661
- OA Status
- gold
- Cited By
- 36
- References
- 50
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4280636802
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W4280636802Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1063/5.0091661Digital Object Identifier
- Title
-
Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)Work title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2022Year of publication
- Publication date
-
2022-05-01Full publication date if available
- Authors
-
Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori MoritaList of authors in order
- Landing page
-
https://doi.org/10.1063/5.0091661Publisher landing page
- PDF URL
-
https://aip.scitation.org/doi/pdf/10.1063/5.0091661Direct link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
-
https://aip.scitation.org/doi/pdf/10.1063/5.0091661Direct OA link when available
- Concepts
-
Materials science, Ferroelectricity, Tin, Amorphous solid, Orthorhombic crystal system, Nucleation, Crystallite, Crystallinity, Crystallization, Annealing (glass), Capacitor, Dielectric, Analytical Chemistry (journal), Optoelectronics, Composite material, Crystallography, Crystal structure, Chemical engineering, Metallurgy, Chemistry, Quantum mechanics, Physics, Voltage, Engineering, Organic chemistry, ChromatographyTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
36Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 12, 2024: 10, 2023: 10, 2022: 4Per-year citation counts (last 5 years)
- References (count)
-
50Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
Full payload
| id | https://openalex.org/W4280636802 |
|---|---|
| doi | https://doi.org/10.1063/5.0091661 |
| ids.doi | https://doi.org/10.1063/5.0091661 |
| ids.openalex | https://openalex.org/W4280636802 |
| fwci | 3.87528193 |
| type | article |
| title | Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) |
| awards[0].id | https://openalex.org/G3922880023 |
| awards[0].funder_id | https://openalex.org/F4320334764 |
| awards[0].funder_award_id | JP21J01667 |
| awards[0].funder_display_name | Japan Society for the Promotion of Science |
| awards[1].id | https://openalex.org/G3798009762 |
| awards[1].funder_id | https://openalex.org/F4320334764 |
| awards[1].funder_award_id | JP20H02189 |
| awards[1].funder_display_name | Japan Society for the Promotion of Science |
| biblio.issue | 5 |
| biblio.volume | 10 |
| biblio.last_page | |
| biblio.first_page | |
| grants[0].funder | https://openalex.org/F4320334764 |
| grants[0].award_id | JP20H02189 |
| grants[0].funder_display_name | Japan Society for the Promotion of Science |
| grants[1].funder | https://openalex.org/F4320334764 |
| grants[1].award_id | JP21J01667 |
| grants[1].funder_display_name | Japan Society for the Promotion of Science |
| topics[0].id | https://openalex.org/T12808 |
| topics[0].field.id | https://openalex.org/fields/22 |
| topics[0].field.display_name | Engineering |
| topics[0].score | 1.0 |
| topics[0].domain.id | https://openalex.org/domains/3 |
| topics[0].domain.display_name | Physical Sciences |
| topics[0].subfield.id | https://openalex.org/subfields/2208 |
| topics[0].subfield.display_name | Electrical and Electronic Engineering |
| topics[0].display_name | Ferroelectric and Negative Capacitance Devices |
| topics[1].id | https://openalex.org/T12046 |
| topics[1].field.id | https://openalex.org/fields/25 |
| topics[1].field.display_name | Materials Science |
| topics[1].score | 0.9922999739646912 |
| topics[1].domain.id | https://openalex.org/domains/3 |
| topics[1].domain.display_name | Physical Sciences |
| topics[1].subfield.id | https://openalex.org/subfields/2505 |
| topics[1].subfield.display_name | Materials Chemistry |
| topics[1].display_name | MXene and MAX Phase Materials |
| topics[2].id | https://openalex.org/T10472 |
| topics[2].field.id | https://openalex.org/fields/22 |
| topics[2].field.display_name | Engineering |
| topics[2].score | 0.9869999885559082 |
| topics[2].domain.id | https://openalex.org/domains/3 |
| topics[2].domain.display_name | Physical Sciences |
| topics[2].subfield.id | https://openalex.org/subfields/2208 |
| topics[2].subfield.display_name | Electrical and Electronic Engineering |
| topics[2].display_name | Semiconductor materials and devices |
| funders[0].id | https://openalex.org/F4320334764 |
| funders[0].ror | https://ror.org/00hhkn466 |
| funders[0].display_name | Japan Society for the Promotion of Science |
| is_xpac | False |
| apc_list.value | 2200 |
| apc_list.currency | USD |
| apc_list.value_usd | 2200 |
| apc_paid.value | 2200 |
| apc_paid.currency | USD |
| apc_paid.value_usd | 2200 |
| concepts[0].id | https://openalex.org/C192562407 |
| concepts[0].level | 0 |
| concepts[0].score | 0.8436956405639648 |
| concepts[0].wikidata | https://www.wikidata.org/wiki/Q228736 |
| concepts[0].display_name | Materials science |
| concepts[1].id | https://openalex.org/C79090758 |
| concepts[1].level | 3 |
| concepts[1].score | 0.7539362907409668 |
| concepts[1].wikidata | https://www.wikidata.org/wiki/Q1045739 |
| concepts[1].display_name | Ferroelectricity |
| concepts[2].id | https://openalex.org/C525849907 |
| concepts[2].level | 2 |
| concepts[2].score | 0.6528987288475037 |
| concepts[2].wikidata | https://www.wikidata.org/wiki/Q1096 |
| concepts[2].display_name | Tin |
| concepts[3].id | https://openalex.org/C56052488 |
| concepts[3].level | 2 |
| concepts[3].score | 0.6300534009933472 |
| concepts[3].wikidata | https://www.wikidata.org/wiki/Q103382 |
| concepts[3].display_name | Amorphous solid |
| concepts[4].id | https://openalex.org/C37243968 |
| concepts[4].level | 3 |
| concepts[4].score | 0.6247107982635498 |
| concepts[4].wikidata | https://www.wikidata.org/wiki/Q648961 |
| concepts[4].display_name | Orthorhombic crystal system |
| concepts[5].id | https://openalex.org/C61048295 |
| concepts[5].level | 2 |
| concepts[5].score | 0.5776007771492004 |
| concepts[5].wikidata | https://www.wikidata.org/wiki/Q909022 |
| concepts[5].display_name | Nucleation |
| concepts[6].id | https://openalex.org/C137637335 |
| concepts[6].level | 2 |
| concepts[6].score | 0.5430391430854797 |
| concepts[6].wikidata | https://www.wikidata.org/wiki/Q899604 |
| concepts[6].display_name | Crystallite |
| concepts[7].id | https://openalex.org/C46275449 |
| concepts[7].level | 2 |
| concepts[7].score | 0.5058924555778503 |
| concepts[7].wikidata | https://www.wikidata.org/wiki/Q2458815 |
| concepts[7].display_name | Crystallinity |
| concepts[8].id | https://openalex.org/C203036418 |
| concepts[8].level | 2 |
| concepts[8].score | 0.48263296484947205 |
| concepts[8].wikidata | https://www.wikidata.org/wiki/Q284256 |
| concepts[8].display_name | Crystallization |
| concepts[9].id | https://openalex.org/C2777855556 |
| concepts[9].level | 2 |
| concepts[9].score | 0.4690288305282593 |
| concepts[9].wikidata | https://www.wikidata.org/wiki/Q4339544 |
| concepts[9].display_name | Annealing (glass) |
| concepts[10].id | https://openalex.org/C52192207 |
| concepts[10].level | 3 |
| concepts[10].score | 0.4389726221561432 |
| concepts[10].wikidata | https://www.wikidata.org/wiki/Q5322 |
| concepts[10].display_name | Capacitor |
| concepts[11].id | https://openalex.org/C133386390 |
| concepts[11].level | 2 |
| concepts[11].score | 0.4054439067840576 |
| concepts[11].wikidata | https://www.wikidata.org/wiki/Q184996 |
| concepts[11].display_name | Dielectric |
| concepts[12].id | https://openalex.org/C113196181 |
| concepts[12].level | 2 |
| concepts[12].score | 0.40483713150024414 |
| concepts[12].wikidata | https://www.wikidata.org/wiki/Q485223 |
| concepts[12].display_name | Analytical Chemistry (journal) |
| concepts[13].id | https://openalex.org/C49040817 |
| concepts[13].level | 1 |
| concepts[13].score | 0.2810453176498413 |
| concepts[13].wikidata | https://www.wikidata.org/wiki/Q193091 |
| concepts[13].display_name | Optoelectronics |
| concepts[14].id | https://openalex.org/C159985019 |
| concepts[14].level | 1 |
| concepts[14].score | 0.20671823620796204 |
| concepts[14].wikidata | https://www.wikidata.org/wiki/Q181790 |
| concepts[14].display_name | Composite material |
| concepts[15].id | https://openalex.org/C8010536 |
| concepts[15].level | 1 |
| concepts[15].score | 0.19526582956314087 |
| concepts[15].wikidata | https://www.wikidata.org/wiki/Q160398 |
| concepts[15].display_name | Crystallography |
| concepts[16].id | https://openalex.org/C115624301 |
| concepts[16].level | 2 |
| concepts[16].score | 0.1539880931377411 |
| concepts[16].wikidata | https://www.wikidata.org/wiki/Q895901 |
| concepts[16].display_name | Crystal structure |
| concepts[17].id | https://openalex.org/C42360764 |
| concepts[17].level | 1 |
| concepts[17].score | 0.15168732404708862 |
| concepts[17].wikidata | https://www.wikidata.org/wiki/Q83588 |
| concepts[17].display_name | Chemical engineering |
| concepts[18].id | https://openalex.org/C191897082 |
| concepts[18].level | 1 |
| concepts[18].score | 0.10942798852920532 |
| concepts[18].wikidata | https://www.wikidata.org/wiki/Q11467 |
| concepts[18].display_name | Metallurgy |
| concepts[19].id | https://openalex.org/C185592680 |
| concepts[19].level | 0 |
| concepts[19].score | 0.0731111466884613 |
| concepts[19].wikidata | https://www.wikidata.org/wiki/Q2329 |
| concepts[19].display_name | Chemistry |
| concepts[20].id | https://openalex.org/C62520636 |
| concepts[20].level | 1 |
| concepts[20].score | 0.0 |
| concepts[20].wikidata | https://www.wikidata.org/wiki/Q944 |
| concepts[20].display_name | Quantum mechanics |
| concepts[21].id | https://openalex.org/C121332964 |
| concepts[21].level | 0 |
| concepts[21].score | 0.0 |
| concepts[21].wikidata | https://www.wikidata.org/wiki/Q413 |
| concepts[21].display_name | Physics |
| concepts[22].id | https://openalex.org/C165801399 |
| concepts[22].level | 2 |
| concepts[22].score | 0.0 |
| concepts[22].wikidata | https://www.wikidata.org/wiki/Q25428 |
| concepts[22].display_name | Voltage |
| concepts[23].id | https://openalex.org/C127413603 |
| concepts[23].level | 0 |
| concepts[23].score | 0.0 |
| concepts[23].wikidata | https://www.wikidata.org/wiki/Q11023 |
| concepts[23].display_name | Engineering |
| concepts[24].id | https://openalex.org/C178790620 |
| concepts[24].level | 1 |
| concepts[24].score | 0.0 |
| concepts[24].wikidata | https://www.wikidata.org/wiki/Q11351 |
| concepts[24].display_name | Organic chemistry |
| concepts[25].id | https://openalex.org/C43617362 |
| concepts[25].level | 1 |
| concepts[25].score | 0.0 |
| concepts[25].wikidata | https://www.wikidata.org/wiki/Q170050 |
| concepts[25].display_name | Chromatography |
| keywords[0].id | https://openalex.org/keywords/materials-science |
| keywords[0].score | 0.8436956405639648 |
| keywords[0].display_name | Materials science |
| keywords[1].id | https://openalex.org/keywords/ferroelectricity |
| keywords[1].score | 0.7539362907409668 |
| keywords[1].display_name | Ferroelectricity |
| keywords[2].id | https://openalex.org/keywords/tin |
| keywords[2].score | 0.6528987288475037 |
| keywords[2].display_name | Tin |
| keywords[3].id | https://openalex.org/keywords/amorphous-solid |
| keywords[3].score | 0.6300534009933472 |
| keywords[3].display_name | Amorphous solid |
| keywords[4].id | https://openalex.org/keywords/orthorhombic-crystal-system |
| keywords[4].score | 0.6247107982635498 |
| keywords[4].display_name | Orthorhombic crystal system |
| keywords[5].id | https://openalex.org/keywords/nucleation |
| keywords[5].score | 0.5776007771492004 |
| keywords[5].display_name | Nucleation |
| keywords[6].id | https://openalex.org/keywords/crystallite |
| keywords[6].score | 0.5430391430854797 |
| keywords[6].display_name | Crystallite |
| keywords[7].id | https://openalex.org/keywords/crystallinity |
| keywords[7].score | 0.5058924555778503 |
| keywords[7].display_name | Crystallinity |
| keywords[8].id | https://openalex.org/keywords/crystallization |
| keywords[8].score | 0.48263296484947205 |
| keywords[8].display_name | Crystallization |
| keywords[9].id | https://openalex.org/keywords/annealing |
| keywords[9].score | 0.4690288305282593 |
| keywords[9].display_name | Annealing (glass) |
| keywords[10].id | https://openalex.org/keywords/capacitor |
| keywords[10].score | 0.4389726221561432 |
| keywords[10].display_name | Capacitor |
| keywords[11].id | https://openalex.org/keywords/dielectric |
| keywords[11].score | 0.4054439067840576 |
| keywords[11].display_name | Dielectric |
| keywords[12].id | https://openalex.org/keywords/analytical-chemistry |
| keywords[12].score | 0.40483713150024414 |
| keywords[12].display_name | Analytical Chemistry (journal) |
| keywords[13].id | https://openalex.org/keywords/optoelectronics |
| keywords[13].score | 0.2810453176498413 |
| keywords[13].display_name | Optoelectronics |
| keywords[14].id | https://openalex.org/keywords/composite-material |
| keywords[14].score | 0.20671823620796204 |
| keywords[14].display_name | Composite material |
| keywords[15].id | https://openalex.org/keywords/crystallography |
| keywords[15].score | 0.19526582956314087 |
| keywords[15].display_name | Crystallography |
| keywords[16].id | https://openalex.org/keywords/crystal-structure |
| keywords[16].score | 0.1539880931377411 |
| keywords[16].display_name | Crystal structure |
| keywords[17].id | https://openalex.org/keywords/chemical-engineering |
| keywords[17].score | 0.15168732404708862 |
| keywords[17].display_name | Chemical engineering |
| keywords[18].id | https://openalex.org/keywords/metallurgy |
| keywords[18].score | 0.10942798852920532 |
| keywords[18].display_name | Metallurgy |
| keywords[19].id | https://openalex.org/keywords/chemistry |
| keywords[19].score | 0.0731111466884613 |
| keywords[19].display_name | Chemistry |
| language | en |
| locations[0].id | doi:10.1063/5.0091661 |
| locations[0].is_oa | True |
| locations[0].source.id | https://openalex.org/S150722692 |
| locations[0].source.issn | 2166-532X |
| locations[0].source.type | journal |
| locations[0].source.is_oa | True |
| locations[0].source.issn_l | 2166-532X |
| locations[0].source.is_core | True |
| locations[0].source.is_in_doaj | True |
| locations[0].source.display_name | APL Materials |
| locations[0].source.host_organization | https://openalex.org/P4310320257 |
| locations[0].source.host_organization_name | American Institute of Physics |
| locations[0].source.host_organization_lineage | https://openalex.org/P4310320257 |
| locations[0].license | cc-by |
| locations[0].pdf_url | https://aip.scitation.org/doi/pdf/10.1063/5.0091661 |
| locations[0].version | publishedVersion |
| locations[0].raw_type | journal-article |
| locations[0].license_id | https://openalex.org/licenses/cc-by |
| locations[0].is_accepted | True |
| locations[0].is_published | True |
| locations[0].raw_source_name | APL Materials |
| locations[0].landing_page_url | https://doi.org/10.1063/5.0091661 |
| locations[1].id | pmh:oai:doaj.org/article:540125ad3abc4c3786753390ceef2ecc |
| locations[1].is_oa | True |
| locations[1].source.id | https://openalex.org/S4306401280 |
| locations[1].source.issn | |
| locations[1].source.type | repository |
| locations[1].source.is_oa | False |
| locations[1].source.issn_l | |
| locations[1].source.is_core | False |
| locations[1].source.is_in_doaj | False |
| locations[1].source.display_name | DOAJ (DOAJ: Directory of Open Access Journals) |
| locations[1].source.host_organization | |
| locations[1].source.host_organization_name | |
| locations[1].source.host_organization_lineage | |
| locations[1].license | cc-by-sa |
| locations[1].pdf_url | |
| locations[1].version | submittedVersion |
| locations[1].raw_type | article |
| locations[1].license_id | https://openalex.org/licenses/cc-by-sa |
| locations[1].is_accepted | False |
| locations[1].is_published | False |
| locations[1].raw_source_name | APL Materials, Vol 10, Iss 5, Pp 051110-051110-7 (2022) |
| locations[1].landing_page_url | https://doaj.org/article/540125ad3abc4c3786753390ceef2ecc |
| indexed_in | crossref, doaj |
| authorships[0].author.id | https://openalex.org/A5048474773 |
| authorships[0].author.orcid | https://orcid.org/0000-0002-2710-8623 |
| authorships[0].author.display_name | Takashi Onaya |
| authorships[0].countries | JP |
| authorships[0].affiliations[0].institution_ids | https://openalex.org/I73613424 |
| authorships[0].affiliations[0].raw_affiliation_string | National Institute of Advanced Industrial Science and Technology (AIST) 1 , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
| authorships[0].affiliations[1].institution_ids | https://openalex.org/I205401836 |
| authorships[0].affiliations[1].raw_affiliation_string | National Institute for Materials Science (NIMS) 2 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan |
| authorships[0].affiliations[2].institution_ids | https://openalex.org/I205924995 |
| authorships[0].affiliations[2].raw_affiliation_string | Japan Society for the Promotion of Science (JSPS) PD 3 , 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan |
| authorships[0].institutions[0].id | https://openalex.org/I205924995 |
| authorships[0].institutions[0].ror | https://ror.org/00hhkn466 |
| authorships[0].institutions[0].type | nonprofit |
| authorships[0].institutions[0].lineage | https://openalex.org/I1319490839, https://openalex.org/I205924995 |
| authorships[0].institutions[0].country_code | JP |
| authorships[0].institutions[0].display_name | Japan Society for the Promotion of Science |
| authorships[0].institutions[1].id | https://openalex.org/I205401836 |
| authorships[0].institutions[1].ror | https://ror.org/026v1ze26 |
| authorships[0].institutions[1].type | facility |
| authorships[0].institutions[1].lineage | https://openalex.org/I205401836 |
| authorships[0].institutions[1].country_code | JP |
| authorships[0].institutions[1].display_name | National Institute for Materials Science |
| authorships[0].institutions[2].id | https://openalex.org/I73613424 |
| authorships[0].institutions[2].ror | https://ror.org/01703db54 |
| authorships[0].institutions[2].type | government |
| authorships[0].institutions[2].lineage | https://openalex.org/I73613424 |
| authorships[0].institutions[2].country_code | JP |
| authorships[0].institutions[2].display_name | National Institute of Advanced Industrial Science and Technology |
| authorships[0].author_position | first |
| authorships[0].raw_author_name | Takashi Onaya |
| authorships[0].is_corresponding | True |
| authorships[0].raw_affiliation_strings | Japan Society for the Promotion of Science (JSPS) PD 3 , 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan, National Institute for Materials Science (NIMS) 2 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan, National Institute of Advanced Industrial Science and Technology (AIST) 1 , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
| authorships[1].author.id | https://openalex.org/A5070528860 |
| authorships[1].author.orcid | https://orcid.org/0000-0002-5973-0230 |
| authorships[1].author.display_name | Toshihide Nabatame |
| authorships[1].countries | JP |
| authorships[1].affiliations[0].institution_ids | https://openalex.org/I205401836 |
| authorships[1].affiliations[0].raw_affiliation_string | National Institute for Materials Science (NIMS) 2 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan |
| authorships[1].institutions[0].id | https://openalex.org/I205401836 |
| authorships[1].institutions[0].ror | https://ror.org/026v1ze26 |
| authorships[1].institutions[0].type | facility |
| authorships[1].institutions[0].lineage | https://openalex.org/I205401836 |
| authorships[1].institutions[0].country_code | JP |
| authorships[1].institutions[0].display_name | National Institute for Materials Science |
| authorships[1].author_position | middle |
| authorships[1].raw_author_name | Toshihide Nabatame |
| authorships[1].is_corresponding | False |
| authorships[1].raw_affiliation_strings | National Institute for Materials Science (NIMS) 2 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan |
| authorships[2].author.id | https://openalex.org/A5103898376 |
| authorships[2].author.orcid | |
| authorships[2].author.display_name | Mari Inoue |
| authorships[2].countries | JP |
| authorships[2].affiliations[0].institution_ids | https://openalex.org/I205401836 |
| authorships[2].affiliations[0].raw_affiliation_string | National Institute for Materials Science (NIMS) 2 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan |
| authorships[2].institutions[0].id | https://openalex.org/I205401836 |
| authorships[2].institutions[0].ror | https://ror.org/026v1ze26 |
| authorships[2].institutions[0].type | facility |
| authorships[2].institutions[0].lineage | https://openalex.org/I205401836 |
| authorships[2].institutions[0].country_code | JP |
| authorships[2].institutions[0].display_name | National Institute for Materials Science |
| authorships[2].author_position | middle |
| authorships[2].raw_author_name | Mari Inoue |
| authorships[2].is_corresponding | False |
| authorships[2].raw_affiliation_strings | National Institute for Materials Science (NIMS) 2 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan |
| authorships[3].author.id | https://openalex.org/A5021426436 |
| authorships[3].author.orcid | |
| authorships[3].author.display_name | Tomomi Sawada |
| authorships[3].countries | JP |
| authorships[3].affiliations[0].institution_ids | https://openalex.org/I205401836 |
| authorships[3].affiliations[0].raw_affiliation_string | National Institute for Materials Science (NIMS) 2 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan |
| authorships[3].institutions[0].id | https://openalex.org/I205401836 |
| authorships[3].institutions[0].ror | https://ror.org/026v1ze26 |
| authorships[3].institutions[0].type | facility |
| authorships[3].institutions[0].lineage | https://openalex.org/I205401836 |
| authorships[3].institutions[0].country_code | JP |
| authorships[3].institutions[0].display_name | National Institute for Materials Science |
| authorships[3].author_position | middle |
| authorships[3].raw_author_name | Tomomi Sawada |
| authorships[3].is_corresponding | False |
| authorships[3].raw_affiliation_strings | National Institute for Materials Science (NIMS) 2 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan |
| authorships[4].author.id | https://openalex.org/A5047753994 |
| authorships[4].author.orcid | https://orcid.org/0000-0002-1634-3361 |
| authorships[4].author.display_name | Hiroyuki Ota |
| authorships[4].countries | JP |
| authorships[4].affiliations[0].institution_ids | https://openalex.org/I73613424 |
| authorships[4].affiliations[0].raw_affiliation_string | National Institute of Advanced Industrial Science and Technology (AIST) 1 , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
| authorships[4].institutions[0].id | https://openalex.org/I73613424 |
| authorships[4].institutions[0].ror | https://ror.org/01703db54 |
| authorships[4].institutions[0].type | government |
| authorships[4].institutions[0].lineage | https://openalex.org/I73613424 |
| authorships[4].institutions[0].country_code | JP |
| authorships[4].institutions[0].display_name | National Institute of Advanced Industrial Science and Technology |
| authorships[4].author_position | middle |
| authorships[4].raw_author_name | Hiroyuki Ota |
| authorships[4].is_corresponding | False |
| authorships[4].raw_affiliation_strings | National Institute of Advanced Industrial Science and Technology (AIST) 1 , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
| authorships[5].author.id | https://openalex.org/A5029744173 |
| authorships[5].author.orcid | https://orcid.org/0000-0002-2666-6762 |
| authorships[5].author.display_name | Yukinori Morita |
| authorships[5].countries | JP |
| authorships[5].affiliations[0].institution_ids | https://openalex.org/I73613424 |
| authorships[5].affiliations[0].raw_affiliation_string | National Institute of Advanced Industrial Science and Technology (AIST) 1 , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
| authorships[5].institutions[0].id | https://openalex.org/I73613424 |
| authorships[5].institutions[0].ror | https://ror.org/01703db54 |
| authorships[5].institutions[0].type | government |
| authorships[5].institutions[0].lineage | https://openalex.org/I73613424 |
| authorships[5].institutions[0].country_code | JP |
| authorships[5].institutions[0].display_name | National Institute of Advanced Industrial Science and Technology |
| authorships[5].author_position | last |
| authorships[5].raw_author_name | Yukinori Morita |
| authorships[5].is_corresponding | False |
| authorships[5].raw_affiliation_strings | National Institute of Advanced Industrial Science and Technology (AIST) 1 , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
| has_content.pdf | True |
| has_content.grobid_xml | True |
| is_paratext | False |
| open_access.is_oa | True |
| open_access.oa_url | https://aip.scitation.org/doi/pdf/10.1063/5.0091661 |
| open_access.oa_status | gold |
| open_access.any_repository_has_fulltext | False |
| created_date | 2025-10-10T00:00:00 |
| display_name | Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) |
| has_fulltext | False |
| is_retracted | False |
| updated_date | 2025-11-06T03:46:38.306776 |
| primary_topic.id | https://openalex.org/T12808 |
| primary_topic.field.id | https://openalex.org/fields/22 |
| primary_topic.field.display_name | Engineering |
| primary_topic.score | 1.0 |
| primary_topic.domain.id | https://openalex.org/domains/3 |
| primary_topic.domain.display_name | Physical Sciences |
| primary_topic.subfield.id | https://openalex.org/subfields/2208 |
| primary_topic.subfield.display_name | Electrical and Electronic Engineering |
| primary_topic.display_name | Ferroelectric and Negative Capacitance Devices |
| related_works | https://openalex.org/W2259847155, https://openalex.org/W4311318556, https://openalex.org/W2477435204, https://openalex.org/W2359607386, https://openalex.org/W2052247542, https://openalex.org/W1968649165, https://openalex.org/W2028707226, https://openalex.org/W2083222146, https://openalex.org/W2172275402, https://openalex.org/W4239046702 |
| cited_by_count | 36 |
| counts_by_year[0].year | 2025 |
| counts_by_year[0].cited_by_count | 12 |
| counts_by_year[1].year | 2024 |
| counts_by_year[1].cited_by_count | 10 |
| counts_by_year[2].year | 2023 |
| counts_by_year[2].cited_by_count | 10 |
| counts_by_year[3].year | 2022 |
| counts_by_year[3].cited_by_count | 4 |
| locations_count | 2 |
| best_oa_location.id | doi:10.1063/5.0091661 |
| best_oa_location.is_oa | True |
| best_oa_location.source.id | https://openalex.org/S150722692 |
| best_oa_location.source.issn | 2166-532X |
| best_oa_location.source.type | journal |
| best_oa_location.source.is_oa | True |
| best_oa_location.source.issn_l | 2166-532X |
| best_oa_location.source.is_core | True |
| best_oa_location.source.is_in_doaj | True |
| best_oa_location.source.display_name | APL Materials |
| best_oa_location.source.host_organization | https://openalex.org/P4310320257 |
| best_oa_location.source.host_organization_name | American Institute of Physics |
| best_oa_location.source.host_organization_lineage | https://openalex.org/P4310320257 |
| best_oa_location.license | cc-by |
| best_oa_location.pdf_url | https://aip.scitation.org/doi/pdf/10.1063/5.0091661 |
| best_oa_location.version | publishedVersion |
| best_oa_location.raw_type | journal-article |
| best_oa_location.license_id | https://openalex.org/licenses/cc-by |
| best_oa_location.is_accepted | True |
| best_oa_location.is_published | True |
| best_oa_location.raw_source_name | APL Materials |
| best_oa_location.landing_page_url | https://doi.org/10.1063/5.0091661 |
| primary_location.id | doi:10.1063/5.0091661 |
| primary_location.is_oa | True |
| primary_location.source.id | https://openalex.org/S150722692 |
| primary_location.source.issn | 2166-532X |
| primary_location.source.type | journal |
| primary_location.source.is_oa | True |
| primary_location.source.issn_l | 2166-532X |
| primary_location.source.is_core | True |
| primary_location.source.is_in_doaj | True |
| primary_location.source.display_name | APL Materials |
| primary_location.source.host_organization | https://openalex.org/P4310320257 |
| primary_location.source.host_organization_name | American Institute of Physics |
| primary_location.source.host_organization_lineage | https://openalex.org/P4310320257 |
| primary_location.license | cc-by |
| primary_location.pdf_url | https://aip.scitation.org/doi/pdf/10.1063/5.0091661 |
| primary_location.version | publishedVersion |
| primary_location.raw_type | journal-article |
| primary_location.license_id | https://openalex.org/licenses/cc-by |
| primary_location.is_accepted | True |
| primary_location.is_published | True |
| primary_location.raw_source_name | APL Materials |
| primary_location.landing_page_url | https://doi.org/10.1063/5.0091661 |
| publication_date | 2022-05-01 |
| publication_year | 2022 |
| referenced_works | https://openalex.org/W1625170149, https://openalex.org/W2092582752, https://openalex.org/W3216093124, https://openalex.org/W3035476469, https://openalex.org/W2893814120, https://openalex.org/W2936721054, https://openalex.org/W2899656958, https://openalex.org/W2334220755, https://openalex.org/W4224212504, https://openalex.org/W3126503310, https://openalex.org/W2974354593, https://openalex.org/W3144411759, https://openalex.org/W3127275189, https://openalex.org/W4200369873, https://openalex.org/W2998803344, https://openalex.org/W3042621001, https://openalex.org/W2947004490, https://openalex.org/W2772734258, https://openalex.org/W3134305745, https://openalex.org/W3080194167, https://openalex.org/W4235116842, https://openalex.org/W1560385599, https://openalex.org/W2769364246, https://openalex.org/W2482978312, https://openalex.org/W3092142580, https://openalex.org/W3040356217, https://openalex.org/W3006592753, https://openalex.org/W2076750356, https://openalex.org/W2059489675, https://openalex.org/W2904079517, https://openalex.org/W2346962696, https://openalex.org/W2295632285, https://openalex.org/W3111071597, https://openalex.org/W3088152050, https://openalex.org/W2954126774, https://openalex.org/W2735519424, https://openalex.org/W2944441606, https://openalex.org/W2004866053, https://openalex.org/W2067285151, https://openalex.org/W2751372842, https://openalex.org/W3161887827, https://openalex.org/W3113361193, https://openalex.org/W2468929476, https://openalex.org/W1881390669, https://openalex.org/W2006130692, https://openalex.org/W2013705827, https://openalex.org/W2945881642, https://openalex.org/W2617742393, https://openalex.org/W2483506684, https://openalex.org/W3208763349 |
| referenced_works_count | 50 |
| abstract_inverted_index.= | 6 |
| abstract_inverted_index.a | 13, 69, 90, 105, 120, 180, 233, 240 |
| abstract_inverted_index.10 | 185 |
| abstract_inverted_index.2- | 46 |
| abstract_inverted_index.an | 61, 127 |
| abstract_inverted_index.as | 119 |
| abstract_inverted_index.at | 22, 187, 208 |
| abstract_inverted_index.be | 230 |
| abstract_inverted_index.by | 19, 232 |
| abstract_inverted_index.in | 79, 97, 140 |
| abstract_inverted_index.is | 111 |
| abstract_inverted_index.nm | 52, 149, 154, 163, 186 |
| abstract_inverted_index.of | 3, 25, 71, 94, 100, 126, 143, 160, 176, 179, 184, 196, 205, 225 |
| abstract_inverted_index.or | 73 |
| abstract_inverted_index.to | 59, 113 |
| abstract_inverted_index.(10 | 38 |
| abstract_inverted_index.(15 | 155 |
| abstract_inverted_index.300 | 23, 95 |
| abstract_inverted_index.HZO | 37, 77, 129 |
| abstract_inverted_index.MFS | 40, 227 |
| abstract_inverted_index.PMA | 132 |
| abstract_inverted_index.The | 36, 76, 157 |
| abstract_inverted_index.and | 1, 29, 44, 47, 53, 171, 201, 221 |
| abstract_inverted_index.can | 229 |
| abstract_inverted_index.for | 123 |
| abstract_inverted_index.low | 91 |
| abstract_inverted_index.nm, | 55 |
| abstract_inverted_index.one | 72 |
| abstract_inverted_index.the | 80, 84, 101, 114, 124, 135, 141, 161, 168, 177, 188, 193, 197, 203, 209 |
| abstract_inverted_index.top | 14, 241 |
| abstract_inverted_index.two | 74 |
| abstract_inverted_index.w/o | 102, 144 |
| abstract_inverted_index.°C | 24 |
| abstract_inverted_index.(2.2 | 145 |
| abstract_inverted_index.(300 | 237 |
| abstract_inverted_index.(6.8 | 150 |
| abstract_inverted_index.SiO2 | 64 |
| abstract_inverted_index.This | 109 |
| abstract_inverted_index.ZrO2 | 15, 49, 116, 182, 242 |
| abstract_inverted_index.even | 88 |
| abstract_inverted_index.film | 78, 117, 130, 183 |
| abstract_inverted_index.form | 60 |
| abstract_inverted_index.free | 166 |
| abstract_inverted_index.from | 167 |
| abstract_inverted_index.less | 173 |
| abstract_inverted_index.that | 99, 215 |
| abstract_inverted_index.thin | 63 |
| abstract_inverted_index.were | 33, 57, 165 |
| abstract_inverted_index.with | 12, 45, 68, 89, 218 |
| abstract_inverted_index.°C) | 238 |
| abstract_inverted_index.°C; | 96 |
| abstract_inverted_index.(2Pr) | 138 |
| abstract_inverted_index.(MFS) | 10 |
| abstract_inverted_index.(PMA) | 32 |
| abstract_inverted_index.(w/o) | 43 |
| abstract_inverted_index.These | 212 |
| abstract_inverted_index.films | 50 |
| abstract_inverted_index.found | 58 |
| abstract_inverted_index.layer | 17, 27, 66, 122 |
| abstract_inverted_index.order | 142 |
| abstract_inverted_index.phase | 87, 200 |
| abstract_inverted_index.thick | 181 |
| abstract_inverted_index.using | 239 |
| abstract_inverted_index.which | 191 |
| abstract_inverted_index.(Hf:Zr | 5 |
| abstract_inverted_index.ZrO2-2 | 148 |
| abstract_inverted_index.acting | 118 |
| abstract_inverted_index.atomic | 26 |
| abstract_inverted_index.budget | 93 |
| abstract_inverted_index.during | 131 |
| abstract_inverted_index.effect | 170 |
| abstract_inverted_index.formed | 83 |
| abstract_inverted_index.higher | 222 |
| abstract_inverted_index.layer. | 244 |
| abstract_inverted_index.oxygen | 206 |
| abstract_inverted_index.result | 110 |
| abstract_inverted_index.(ZrO2-2 | 51 |
| abstract_inverted_index.TiN/HZO | 189 |
| abstract_inverted_index.ZrO2-10 | 54, 153, 162 |
| abstract_inverted_index.because | 175 |
| abstract_inverted_index.fatigue | 223 |
| abstract_inverted_index.remnant | 136 |
| abstract_inverted_index.results | 213 |
| abstract_inverted_index.suggest | 214 |
| abstract_inverted_index.thermal | 92 |
| abstract_inverted_index.wake-up | 169 |
| abstract_inverted_index.without | 42 |
| abstract_inverted_index.&lt; | 147, 152 |
| abstract_inverted_index.ZrO2/HZO | 210 |
| abstract_inverted_index.achieved | 231 |
| abstract_inverted_index.promoted | 192 |
| abstract_inverted_index.superior | 216 |
| abstract_inverted_index.µC/cm2) | 146, 151 |
| abstract_inverted_index.(SiO2-IL) | 67 |
| abstract_inverted_index.HZO-based | 226 |
| abstract_inverted_index.amorphous | 107, 128 |
| abstract_inverted_index.annealing | 31 |
| abstract_inverted_index.capacitor | 103, 164 |
| abstract_inverted_index.contrast, | 98 |
| abstract_inverted_index.endurance | 158 |
| abstract_inverted_index.exhibited | 104, 172 |
| abstract_inverted_index.extremely | 62 |
| abstract_inverted_index.formation | 195, 204 |
| abstract_inverted_index.increased | 139 |
| abstract_inverted_index.insertion | 178 |
| abstract_inverted_index.nm)-based | 39 |
| abstract_inverted_index.prevented | 202 |
| abstract_inverted_index.processes | 21 |
| abstract_inverted_index.technique | 236 |
| abstract_inverted_index.thickness | 70 |
| abstract_inverted_index.vacancies | 207 |
| abstract_inverted_index.µC/cm2). | 156 |
| abstract_inverted_index.0.43:0.57; | 7 |
| abstract_inverted_index.Therefore, | 134 |
| abstract_inverted_index.attributed | 112 |
| abstract_inverted_index.capacitors | 11, 41, 82, 228 |
| abstract_inverted_index.deposition | 28 |
| abstract_inverted_index.fabricated | 18 |
| abstract_inverted_index.interface, | 190 |
| abstract_inverted_index.interface. | 211 |
| abstract_inverted_index.nucleation | 16, 121, 243 |
| abstract_inverted_index.properties | 159, 220 |
| abstract_inverted_index.resistance | 224 |
| abstract_inverted_index.structure. | 108 |
| abstract_inverted_index.treatment. | 133 |
| abstract_inverted_index.10-nm-thick | 48 |
| abstract_inverted_index.degradation | 174 |
| abstract_inverted_index.fabrication | 235 |
| abstract_inverted_index.interfacial | 65 |
| abstract_inverted_index.monolayers. | 75 |
| abstract_inverted_index.HZO)/SiO2/Si | 8 |
| abstract_inverted_index.orthorhombic | 86, 199 |
| abstract_inverted_index.polarization | 137 |
| abstract_inverted_index.preferential | 194 |
| abstract_inverted_index.wake-up-free | 219 |
| abstract_inverted_index.crystallinity | 2 |
| abstract_inverted_index.ferroelectric | 85, 198 |
| abstract_inverted_index.investigated. | 35 |
| abstract_inverted_index.predominantly | 106 |
| abstract_inverted_index.respectively) | 56 |
| abstract_inverted_index.systematically | 34 |
| abstract_inverted_index.crystallization | 125 |
| abstract_inverted_index.low-temperature | 20, 234 |
| abstract_inverted_index.polycrystalline | 115 |
| abstract_inverted_index.Ferroelectricity | 0 |
| abstract_inverted_index.ferroelectricity | 217 |
| abstract_inverted_index.post-metallization | 30 |
| abstract_inverted_index.TiN/ZrO2/HZO/SiO2/Si | 81 |
| abstract_inverted_index.TiN/ZrO2/HfxZr1−xO2 | 4 |
| abstract_inverted_index.metal–ferroelectric–semiconductor | 9 |
| cited_by_percentile_year.max | 100 |
| cited_by_percentile_year.min | 97 |
| corresponding_author_ids | https://openalex.org/A5048474773 |
| countries_distinct_count | 1 |
| institutions_distinct_count | 6 |
| corresponding_institution_ids | https://openalex.org/I205401836, https://openalex.org/I205924995, https://openalex.org/I73613424 |
| citation_normalized_percentile.value | 0.93497012 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | True |