Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe Article Swipe

View

Related Concepts

Sheet resistance Materials science Fin Nanometre Silicon Spreading resistance profiling Boron Nanostructure Diffusion Composite material Optoelectronics Nanotechnology Optics Chemistry Layer (electronics) Physics Thermodynamics Organic chemistry

Janusz Bogdanowicz , Steven Folkersma , Stefanie Sergeant , Andreas Schulze , Alain Moussa , Dirch Hjorth Petersen , Ole Hansen , Henrik H. Henrichsen , Peter F. Nielsen , Wilfried Vandervorst ·

YOU? · · 2017 · Open Access · · DOI: https://doi.org/10.1002/pssa.201700857 · OA: W2773420840

This paper extends the applicability of the micro four‐point probe technique from the sheet resistance measurements on large areas toward narrow (<20 nm) semiconducting nanostructures with an elongated fin geometry. Using this technology, it is shown that the sheet resistance of boron‐implanted and laser‐annealed silicon fins with widths ranging from 500 down to 20 nm rises as the width is reduced. Drift‐diffusion simulations show that the observed increase can be partially explained by the carrier depletion induced by interface states at the fin sidewalls.